JP4211014B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4211014B2
JP4211014B2 JP25964897A JP25964897A JP4211014B2 JP 4211014 B2 JP4211014 B2 JP 4211014B2 JP 25964897 A JP25964897 A JP 25964897A JP 25964897 A JP25964897 A JP 25964897A JP 4211014 B2 JP4211014 B2 JP 4211014B2
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Japan
Prior art keywords
layer
film
plug
polycrystalline
aluminum
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Expired - Fee Related
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JP25964897A
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English (en)
Japanese (ja)
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JPH1197535A5 (enExample
JPH1197535A (ja
Inventor
俊二 中村
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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP25964897A priority Critical patent/JP4211014B2/ja
Publication of JPH1197535A publication Critical patent/JPH1197535A/ja
Publication of JPH1197535A5 publication Critical patent/JPH1197535A5/ja
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Publication of JP4211014B2 publication Critical patent/JP4211014B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP25964897A 1997-09-25 1997-09-25 半導体装置の製造方法 Expired - Fee Related JP4211014B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25964897A JP4211014B2 (ja) 1997-09-25 1997-09-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25964897A JP4211014B2 (ja) 1997-09-25 1997-09-25 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005096944A Division JP4250146B2 (ja) 2005-03-30 2005-03-30 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JPH1197535A JPH1197535A (ja) 1999-04-09
JPH1197535A5 JPH1197535A5 (enExample) 2005-09-15
JP4211014B2 true JP4211014B2 (ja) 2009-01-21

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ID=17336976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25964897A Expired - Fee Related JP4211014B2 (ja) 1997-09-25 1997-09-25 半導体装置の製造方法

Country Status (1)

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JP (1) JP4211014B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234410A (ja) 2002-02-08 2003-08-22 Fujitsu Ltd キャパシタ及びその製造方法並びに半導体装置
JP2003249553A (ja) 2002-02-26 2003-09-05 Fujitsu Ltd アンチヒューズ及びその書き込み方法
KR100738065B1 (ko) * 2002-07-10 2007-07-10 삼성전자주식회사 한 개의 트랜지스터와 데이터 저장 수단으로 한 개의저항체를구비하는 메모리 소자 및 그 구동 방법
US7550799B2 (en) 2002-11-18 2009-06-23 Fujitsu Microelectronics Limited Semiconductor device and fabrication method of a semiconductor device
JP4209206B2 (ja) 2003-01-14 2009-01-14 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2007013196A (ja) * 2006-08-23 2007-01-18 Renesas Technology Corp 半導体装置
US20150303200A1 (en) * 2012-11-28 2015-10-22 Ps4 Luxco S.A.R.L. Semiconductor device and method for manufacturing same
US9543310B2 (en) 2014-09-10 2017-01-10 Kabushiki Kaisha Toshiba Semiconductor storage device having communicated air gaps between adjacent memory cells
WO2021145082A1 (ja) * 2020-01-14 2021-07-22 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器

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Publication number Publication date
JPH1197535A (ja) 1999-04-09

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