JP4188373B2 - 多層誘電体基板および半導体パッケージ - Google Patents
多層誘電体基板および半導体パッケージ Download PDFInfo
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Description
図1〜図3はこの発明にかかる半導体パッケージ1を示すものである。この発明は、任意の周波数帯で動作する半導体デバイス(半導体IC)が搭載された半導体パッケージに適用可能であるが、ここではマイクロ波帯、ミリ波帯などの高周波帯で動作する複数の高周波半導体デバイス(MMIC、以下高周波デバイスと略す)が搭載される半導体パッケージ1(以下、高周波パッケージという)に本発明を適用した場合を示している。半導体パッケージ1は、誘電体基板上に気密でかつ電気的に遮蔽されたキャビティを形成し、このキャビティ内に半導体デバイスを実装する多層誘電体基板2を備えて構成される。この半導体パッケージ1は、例えば、FM−CWレーダに適用して好適である。
図9は実施の形態2の高周波パッケージを示すものである。この実施の形態2においては、実施の形態1のインピーダンス変成器60を削除している。
図10は実施の形態3の高周波パッケージを示すものである。この実施の形態3においては、誘電体伝送路80に設けられた実施の形態1の先端短絡のグランドビア30dと結合開口65との間に誘電体基板の積層方向に抵抗体を配置している。図の例では導体ではなく、抵抗体を充填した抵抗体ビア列300を配置している。
2 多層誘電体基板
3 高周波デバイス(半導体デバイス)
4 シールリング
5 カバー
6 IC搭載凹部
6a 側壁
7 フィードスルー
8 マイクロストリップ線路
10 内部導体パッド
11 導体パッド
12 ワイヤ
15 外部導体パッド
16 グランド面(表層接地導体)
18 グランドパターン(表層接地導体)
19 誘電体
30 グランドビア
30b 側壁グランドビア
33 キャビティ
35 内層接地導体
40 信号ビア
45 内層信号線路
50 開口部
60 インピーダンス変成器
65 結合開口
70 抵抗体
80 誘電体伝送路、
300 抵抗体ビア列
Claims (11)
- 誘電体基板上に、電磁的にシールドされた空間であるキャビティを形成し、このキャビティ内に半導体デバイスを実装する多層誘電体基板において、
前記キャビティ内の誘電体基板上の全体に配される、前記キャビティの電磁シールドの一部である表層接地導体と、前記表層接地導体の一部に形成した開口部と、
誘電体基板内に形成され、前記開口部を介して前記キャビティと電気的に結合する、信号波の基板内実効波長の略1/4の奇数倍の長さを有するインピーダンス変成器と、
誘電体基板内に形成され、信号波の基板内実効波長の略1/4の奇数倍の長さを有する先端短絡の誘電体伝送路と、
前記インピーダンス変成器と誘電体伝送路との接続部における内層接地導体に形成された結合開口と、
この結合開口に形成される抵抗体と、
を備えることを特徴とする多層誘電体基板。 - 誘電体基板上に、電磁的にシールドされた空間であるキャビティを形成し、このキャビティ内に半導体デバイスを実装する多層誘電体基板において、
前記キャビティ内の誘電体基板上の全体に配される、前記キャビティの電磁シールドの一部である表層接地導体と、前記表層接地導体の一部に形成した開口部と、
誘電体基板内に形成され、前記開口部を介して前記キャビティと電気的に結合する、信号波の基板内実効波長の略1/4の奇数倍の長さを有するインピーダンス変成器と、
誘電体基板内に形成された先端短絡の誘電体伝送路と、
前記インピーダンス変成器と誘電体伝送路との接続部における内層接地導体に形成された結合開口と、
前記誘電体伝送路内であって前記先端短絡点から信号波の基板内実効波長の略1/4の奇数倍の位置に配置した抵抗体と、
を備えることを特徴とする多層誘電体基板。 - 誘電体基板上に、電磁的にシールドされた空間であるキャビティを形成し、このキャビティ内に半導体デバイスを実装する多層誘電体基板において、
前記キャビティ内の誘電体基板上の全体に配される、前記キャビティの電磁シールドの一部である表層接地導体と、前記表層接地導体の一部に形成した開口部と、
前記誘電体基板内に形成され、前記開口部を介して前記キャビティと電気的に結合する、信号波の基板内実効波長の略1/4の奇数倍の長さを有する先端短絡の誘電体伝送路と、
上記開口部に形成される抵抗体と、
を備えることを特徴とする多層誘電体基板。 - 誘電体基板上に、電磁的にシールドされた空間であるキャビティを形成し、このキャビティ内に半導体デバイスを実装する多層誘電体基板において、
前記キャビティ内の誘電体基板上の全体に配される、前記キャビティの電磁シールドの一部である表層接地導体と、前記表層接地導体の一部に形成した開口部と、
誘電体基板内に形成され、前記開口部を介して前記キャビティと電気的に結合する先端短絡の誘電体伝送路と、
前記誘電体伝送路内であって前記先端短絡点から信号波の基板内実効波長の略1/4の奇数倍の位置に配置した抵抗体と、
を備えることを特徴とする多層誘電体基板。 - 前記開口部は、前記誘電体基板上であって、キャビティの側端部あるいは側端部から信号波の波長の略1/2の整数倍の長さを有する位置に配置することを特徴とする請求項1〜4のいずれか一つに記載の多層誘電体基板。
- 前記開口部、誘電体伝送路および抵抗体を、半導体デバイスが搭載される部位の周囲に形成したことを特徴とする請求項1または2に記載の多層誘電体基板。
- 前記開口部、インピーダンス変成器、誘電体伝送路、結合開口および抵抗体を、半導体デバイスが搭載される部位の周囲に形成したことを特徴とする請求項3または4に記載の多層誘電体基板。
- 前記誘電体伝送路は、内層接地導体と、複数のグランドビアと、これら内層接地導体および複数のグランドビアの内部の誘電体とを有して構成したことを特徴とする請求項1〜4のいずれか一つに記載の多層誘電体基板。
- 前記インピーダンス変成器は、内層接地導体と、複数のグランドビアと、これら内層接地導体および複数のグランドビアの内部の誘電体とを有して構成したことを特徴とする請求項3または4に記載の多層誘電体基板。
- 請求項1〜4のいずれか一つに記載の多層誘電体基板と、
前記キャビティを形成する電磁シールド部材と、
を備えることを特徴とする半導体パッケージ。 - 1〜複数の半導体デバイスと、
前記半導体デバイスを搭載する請求項1〜4のいずれか一つに記載の多層誘電体基板と、
前記半導体デバイスを収容するための前記キャビティを形成する電磁シールド部材と、
を備えることを特徴とする半導体パッケージ。
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