JP4181129B2 - 銅配線および／またはフィルムを研磨および／または浄化する方法およびそのための組成物 - Google Patents

銅配線および／またはフィルムを研磨および／または浄化する方法およびそのための組成物 Download PDF

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Publication number
JP4181129B2
JP4181129B2 JP2004564827A JP2004564827A JP4181129B2 JP 4181129 B2 JP4181129 B2 JP 4181129B2 JP 2004564827 A JP2004564827 A JP 2004564827A JP 2004564827 A JP2004564827 A JP 2004564827A JP 4181129 B2 JP4181129 B2 JP 4181129B2
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Prior art keywords
composition
copper
acid
film
solvent
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Expired - Fee Related
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JP2004564827A
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English (en)
Japanese (ja)
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JP2006514706A (ja
JP2006514706A5 (cg-RX-API-DMAC7.html
Inventor
ケサリ，サスルト
エム． ラマンナ，ウィリアム
ジェイ． ペアレント，マイケル
エー． ザッゼーラ，ローレンス
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2006514706A5 publication Critical patent/JP2006514706A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Weting (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
JP2004564827A 2002-12-16 2003-10-28 銅配線および／またはフィルムを研磨および／または浄化する方法およびそのための組成物 Expired - Fee Related JP4181129B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/319,954 US6884338B2 (en) 2002-12-16 2002-12-16 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
PCT/US2003/034259 WO2004061028A1 (en) 2002-12-16 2003-10-28 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

Publications (3)

Publication Number Publication Date
JP2006514706A JP2006514706A (ja) 2006-05-11
JP2006514706A5 JP2006514706A5 (cg-RX-API-DMAC7.html) 2006-11-30
JP4181129B2 true JP4181129B2 (ja) 2008-11-12

Family

ID=32506753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004564827A Expired - Fee Related JP4181129B2 (ja) 2002-12-16 2003-10-28 銅配線および／またはフィルムを研磨および／または浄化する方法およびそのための組成物

Country Status (7)

Country Link
US (1) US6884338B2 (cg-RX-API-DMAC7.html)
EP (1) EP1572821A1 (cg-RX-API-DMAC7.html)
JP (1) JP4181129B2 (cg-RX-API-DMAC7.html)
KR (1) KR20050085661A (cg-RX-API-DMAC7.html)
CN (1) CN100448941C (cg-RX-API-DMAC7.html)
AU (1) AU2003286734A1 (cg-RX-API-DMAC7.html)
WO (1) WO2004061028A1 (cg-RX-API-DMAC7.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
TWI250202B (en) * 2003-05-13 2006-03-01 Eternal Chemical Co Ltd Process and slurry for chemical mechanical polishing
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7566391B2 (en) * 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
JP2007088370A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液及び化学機械的研磨方法
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
JP4897604B2 (ja) * 2007-07-27 2012-03-14 株式会社Ｄｎｐファインケミカル フォトマスク製造用のエッチング液
JP4940102B2 (ja) * 2007-10-25 2012-05-30 株式会社 マイクロプロセス エッチング剤組成物及びそれを用いた半導体装置の製造方法
JP2011198901A (ja) * 2010-03-18 2011-10-06 Dnp Fine Chemicals Co Ltd 導電膜用エッチング液および導電膜のエッチング方法
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
CN103160909B (zh) * 2011-12-15 2016-04-27 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
JP7014477B1 (ja) * 2021-05-20 2022-02-01 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0419845A3 (en) 1989-09-05 1991-11-13 General Electric Company Method for preparing metallized polyimide composites
DE4333385C2 (de) 1993-09-30 1997-01-30 Friedrich A Spruegel Flächendesinfektions- und Reinigungsmittel
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5652072A (en) 1995-09-21 1997-07-29 Minnesota Mining And Manufacturing Company Battery containing bis(perfluoroalkylsulfonyl)imide and cyclic perfluoroalkylene disulfonylimide salts
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6130161A (en) 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
JPH1192754A (ja) 1997-09-24 1999-04-06 Cci Corp ガラス用撥水処理剤
KR100559110B1 (ko) 1997-12-10 2006-03-13 미네소타 마이닝 앤드 매뉴팩춰링 캄파니 전기화학 시스템에서의 비스(퍼플루오로알킬설포닐)이미드 계면활성제 염
TWI223678B (en) 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
US6197696B1 (en) 1998-03-26 2001-03-06 Matsushita Electric Industrial Co., Ltd. Method for forming interconnection structure
US6287977B1 (en) 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6284656B1 (en) 1998-08-04 2001-09-04 Micron Technology, Inc. Copper metallurgy in integrated circuits
US6245663B1 (en) 1998-09-30 2001-06-12 Conexant Systems, Inc. IC interconnect structures and methods for making same
US6291887B1 (en) 1999-01-04 2001-09-18 Advanced Micro Devices, Inc. Dual damascene arrangements for metal interconnection with low k dielectric constant materials and nitride middle etch stop layer
IL128920A0 (en) 1999-03-10 2000-02-17 Nova Measuring Instr Ltd Method for monitoring metal cmp
US6290578B1 (en) 1999-10-13 2001-09-18 Speedfam-Ipec Corporation Method for chemical mechanical polishing using synergistic geometric patterns
US6369242B2 (en) 2000-03-17 2002-04-09 Roche Vitamins Inc. Tocopherol manufacture by tris(perfluorohydrocarbylsulphonyl) methane or metal methides thereof
US6358899B1 (en) 2000-03-23 2002-03-19 Ashland, Inc. Cleaning compositions and use thereof containing ammonium hydroxide and fluorosurfactant
US6372700B1 (en) 2000-03-31 2002-04-16 3M Innovative Properties Company Fluorinated solvent compositions containing ozone
US6310018B1 (en) 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
TW486801B (en) 2000-04-07 2002-05-11 Taiwan Semiconductor Mfg Method of fabricating dual damascene structure
US6291082B1 (en) 2000-06-13 2001-09-18 Advanced Micro Devices, Inc. Method of electroless ag layer formation for cu interconnects
CN1575508A (zh) 2000-11-15 2005-02-02 英特尔公司 用于集成电路的铜合金互连线及其制造方法
US6555510B2 (en) 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Also Published As

Publication number Publication date
US6884338B2 (en) 2005-04-26
CN100448941C (zh) 2009-01-07
US20040112753A1 (en) 2004-06-17
JP2006514706A (ja) 2006-05-11
CN1726265A (zh) 2006-01-25
WO2004061028A1 (en) 2004-07-22
EP1572821A1 (en) 2005-09-14
AU2003286734A1 (en) 2004-07-29
KR20050085661A (ko) 2005-08-29

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