CN100448941C - 抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物 - Google Patents

抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物 Download PDF

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Publication number
CN100448941C
CN100448941C CNB2003801059248A CN200380105924A CN100448941C CN 100448941 C CN100448941 C CN 100448941C CN B2003801059248 A CNB2003801059248 A CN B2003801059248A CN 200380105924 A CN200380105924 A CN 200380105924A CN 100448941 C CN100448941 C CN 100448941C
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CN
China
Prior art keywords
copper
ring
composition
heteroatoms
formula
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2003801059248A
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English (en)
Chinese (zh)
Other versions
CN1726265A (zh
Inventor
S·克萨里
W·M·拉曼纳
M·J·帕伦特
L·A·扎哲拉
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN1726265A publication Critical patent/CN1726265A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Weting (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
CNB2003801059248A 2002-12-16 2003-10-28 抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物 Expired - Fee Related CN100448941C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/319,954 2002-12-16
US10/319,954 US6884338B2 (en) 2002-12-16 2002-12-16 Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor

Publications (2)

Publication Number Publication Date
CN1726265A CN1726265A (zh) 2006-01-25
CN100448941C true CN100448941C (zh) 2009-01-07

Family

ID=32506753

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003801059248A Expired - Fee Related CN100448941C (zh) 2002-12-16 2003-10-28 抛光和/或清洁铜互连和/或薄膜的方法及所用的组合物

Country Status (7)

Country Link
US (1) US6884338B2 (cg-RX-API-DMAC7.html)
EP (1) EP1572821A1 (cg-RX-API-DMAC7.html)
JP (1) JP4181129B2 (cg-RX-API-DMAC7.html)
KR (1) KR20050085661A (cg-RX-API-DMAC7.html)
CN (1) CN100448941C (cg-RX-API-DMAC7.html)
AU (1) AU2003286734A1 (cg-RX-API-DMAC7.html)
WO (1) WO2004061028A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN103160909A (zh) * 2011-12-15 2013-06-19 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法

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US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
TWI250202B (en) * 2003-05-13 2006-03-01 Eternal Chemical Co Ltd Process and slurry for chemical mechanical polishing
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7566391B2 (en) * 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
JP2007088370A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液及び化学機械的研磨方法
US8512593B2 (en) * 2005-11-04 2013-08-20 Cheil Industries, Inc. Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same
KR100643628B1 (ko) * 2005-11-04 2006-11-10 제일모직주식회사 다결정 실리콘 연마용 ｃｍｐ 슬러리 조성물 및 이의 제조방법
JP4897604B2 (ja) * 2007-07-27 2012-03-14 株式会社Ｄｎｐファインケミカル フォトマスク製造用のエッチング液
JP4940102B2 (ja) * 2007-10-25 2012-05-30 株式会社 マイクロプロセス エッチング剤組成物及びそれを用いた半導体装置の製造方法
JP2011198901A (ja) * 2010-03-18 2011-10-06 Dnp Fine Chemicals Co Ltd 導電膜用エッチング液および導電膜のエッチング方法
CN101972755B (zh) * 2010-07-21 2012-02-01 河北工业大学 Ulsi铜材料抛光后表面清洗方法
KR101842033B1 (ko) * 2014-01-06 2018-03-26 한화테크윈 주식회사 그래핀 제조용 조성물 및 이를 이용한 그래핀의 제조 방법
US11193059B2 (en) 2016-12-13 2021-12-07 Current Lighting Solutions, Llc Processes for preparing color stable red-emitting phosphor particles having small particle size
JP7014477B1 (ja) * 2021-05-20 2022-02-01 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法

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WO2002092211A2 (en) * 2001-05-10 2002-11-21 3M Innovative Properties Company Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

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US6280883B1 (en) * 1997-12-10 2001-08-28 3M Innovative Properties Company Bis (perfluoralkanesulfonyl)imide surfactant salts in electrochemical systems
WO2002092211A2 (en) * 2001-05-10 2002-11-21 3M Innovative Properties Company Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103160909A (zh) * 2011-12-15 2013-06-19 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法
CN103160909B (zh) * 2011-12-15 2016-04-27 比亚迪股份有限公司 一种用于电蚀刻非晶合金材料件的电蚀刻液及蚀刻方法

Also Published As

Publication number Publication date
US6884338B2 (en) 2005-04-26
US20040112753A1 (en) 2004-06-17
JP2006514706A (ja) 2006-05-11
CN1726265A (zh) 2006-01-25
WO2004061028A1 (en) 2004-07-22
EP1572821A1 (en) 2005-09-14
AU2003286734A1 (en) 2004-07-29
JP4181129B2 (ja) 2008-11-12
KR20050085661A (ko) 2005-08-29

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Granted publication date: 20090107

Termination date: 20131028