JP4178836B2 - 窒化ガリウム系半導体素子及びその製造方法 - Google Patents

窒化ガリウム系半導体素子及びその製造方法 Download PDF

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Publication number
JP4178836B2
JP4178836B2 JP2002155507A JP2002155507A JP4178836B2 JP 4178836 B2 JP4178836 B2 JP 4178836B2 JP 2002155507 A JP2002155507 A JP 2002155507A JP 2002155507 A JP2002155507 A JP 2002155507A JP 4178836 B2 JP4178836 B2 JP 4178836B2
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Prior art keywords
gallium nitride
compound semiconductor
layer
semiconductor layer
metal film
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Expired - Lifetime
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JP2002155507A
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English (en)
Japanese (ja)
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JP2003347238A (ja
JP2003347238A5 (enExample
Inventor
庸紀 朝妻
中島　　博
修 後藤
剛 東條
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Sony Corp
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Sony Corp
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Priority to JP2002155507A priority Critical patent/JP4178836B2/ja
Priority to US10/445,601 priority patent/US20040056267A1/en
Publication of JP2003347238A publication Critical patent/JP2003347238A/ja
Priority to US11/045,652 priority patent/US20050145856A1/en
Publication of JP2003347238A5 publication Critical patent/JP2003347238A5/ja
Application granted granted Critical
Publication of JP4178836B2 publication Critical patent/JP4178836B2/ja
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002155507A 2002-05-29 2002-05-29 窒化ガリウム系半導体素子及びその製造方法 Expired - Lifetime JP4178836B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002155507A JP4178836B2 (ja) 2002-05-29 2002-05-29 窒化ガリウム系半導体素子及びその製造方法
US10/445,601 US20040056267A1 (en) 2002-05-29 2003-05-27 Gallium nitride semiconductor device and method of producing the same
US11/045,652 US20050145856A1 (en) 2002-05-29 2005-01-28 Gallium nitride semiconductor device and method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002155507A JP4178836B2 (ja) 2002-05-29 2002-05-29 窒化ガリウム系半導体素子及びその製造方法

Publications (3)

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JP2003347238A JP2003347238A (ja) 2003-12-05
JP2003347238A5 JP2003347238A5 (enExample) 2005-04-07
JP4178836B2 true JP4178836B2 (ja) 2008-11-12

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JP2002155507A Expired - Lifetime JP4178836B2 (ja) 2002-05-29 2002-05-29 窒化ガリウム系半導体素子及びその製造方法

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US (2) US20040056267A1 (enExample)
JP (1) JP4178836B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1708284B1 (en) 2004-01-20 2017-03-29 Nichia Corporation Semiconductor light-emitting device
JP4967657B2 (ja) * 2004-06-18 2012-07-04 日本電気株式会社 Ｉｉｉ族窒化物半導体光素子およびその製造方法
US7781780B2 (en) * 2008-03-31 2010-08-24 Bridgelux, Inc. Light emitting diodes with smooth surface for reflective electrode
JP2012064663A (ja) * 2010-09-14 2012-03-29 Advanced Power Device Research Association 窒化物半導体装置およびその製造方法
KR101684859B1 (ko) * 2011-01-05 2016-12-09 삼성전자주식회사 발광 다이오드 제조방법 및 이에 의하여 제조된 발광 다이오드
US9614136B2 (en) * 2012-04-02 2017-04-04 Asahi Kasei Kabushiki Kaisha Optical substrate, semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
US11362237B2 (en) * 2020-06-02 2022-06-14 Facebook Technologies, Llc High-efficiency red micro-LED with localized current aperture
CN113410356B (zh) * 2021-07-21 2023-11-17 山西中科潞安紫外光电科技有限公司 一种倒装结构深紫外发光二极管芯片及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
JP2000049114A (ja) * 1998-07-30 2000-02-18 Sony Corp 電極およびその形成方法ならびに半導体装置およびその製造方法
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
JP3833848B2 (ja) * 1999-05-10 2006-10-18 パイオニア株式会社 ３族窒化物半導体素子製造方法
GB2350927A (en) * 1999-06-12 2000-12-13 Sharp Kk A method growing nitride semiconductor layer by molecular beam epitaxy
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
JP4148664B2 (ja) * 2001-02-02 2008-09-10 三洋電機株式会社 窒化物系半導体レーザ素子およびその形成方法
GB2376563A (en) * 2001-06-13 2002-12-18 Sharp Kk A method of growing a magnesium-doped nitride semiconductor material
US6744075B2 (en) * 2001-09-17 2004-06-01 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of forming the same
WO2003063215A1 (en) * 2002-01-21 2003-07-31 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device manufacturing method
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices

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JP2003347238A (ja) 2003-12-05
US20050145856A1 (en) 2005-07-07
US20040056267A1 (en) 2004-03-25

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