JP4167199B2 - タングステン電極 - Google Patents
タングステン電極 Download PDFInfo
- Publication number
- JP4167199B2 JP4167199B2 JP2004114913A JP2004114913A JP4167199B2 JP 4167199 B2 JP4167199 B2 JP 4167199B2 JP 2004114913 A JP2004114913 A JP 2004114913A JP 2004114913 A JP2004114913 A JP 2004114913A JP 4167199 B2 JP4167199 B2 JP 4167199B2
- Authority
- JP
- Japan
- Prior art keywords
- tungsten
- lamp
- discharge lamp
- ppm
- tungsten electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 54
- 229910052721 tungsten Inorganic materials 0.000 title claims description 50
- 239000010937 tungsten Substances 0.000 title claims description 50
- 239000013078 crystal Substances 0.000 claims description 13
- 238000005096 rolling process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 238000004031 devitrification Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 229910052700 potassium Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Landscapes
- Discharge Lamp (AREA)
Description
2,72 粒界
50 高電圧ランプ
51 フィラメント
52 中空ガラス
60 放電灯
61 陽極
62 陰極
Claims (4)
- Siを5ppm未満、Kを5〜20ppm、Alを5〜20ppm含み、残部が実質的にタングステンからなり、15mm以上の直径を有することを特徴とするタングステン電極。
- 請求項1記載のタングステン電極において、そのタングステン電極は密度が19100kg/m3以上であることを特徴とするタングステン電極。
- 請求項1記載のタングステン電極において、その結晶組織のアスペクト比が2以上20以下の部分の面積が50%を超えることを特徴とするタングステン電極。
- 請求項1に記載のタングステン電極から実質的になることを特徴とする放電灯用タングステン陽極。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004114913A JP4167199B2 (ja) | 2003-11-28 | 2004-04-09 | タングステン電極 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003399998 | 2003-11-28 | ||
JP2004114913A JP4167199B2 (ja) | 2003-11-28 | 2004-04-09 | タングステン電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005183355A JP2005183355A (ja) | 2005-07-07 |
JP4167199B2 true JP4167199B2 (ja) | 2008-10-15 |
Family
ID=34797424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004114913A Expired - Lifetime JP4167199B2 (ja) | 2003-11-28 | 2004-04-09 | タングステン電極 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4167199B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5823770B2 (ja) * | 2011-08-09 | 2015-11-25 | プランゼー エスエー | ショートアーク高圧放電ランプ |
JP5800922B2 (ja) | 2012-02-15 | 2015-10-28 | 株式会社東芝 | 放電ランプ用カソード部品 |
WO2023199921A1 (ja) * | 2022-04-15 | 2023-10-19 | 株式会社アライドマテリアル | タングステンを含む材料および直流放電灯電極 |
-
2004
- 2004-04-09 JP JP2004114913A patent/JP4167199B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005183355A (ja) | 2005-07-07 |
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