JP4165507B2 - 回路の製造方法 - Google Patents
回路の製造方法 Download PDFInfo
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- JP4165507B2 JP4165507B2 JP2004506090A JP2004506090A JP4165507B2 JP 4165507 B2 JP4165507 B2 JP 4165507B2 JP 2004506090 A JP2004506090 A JP 2004506090A JP 2004506090 A JP2004506090 A JP 2004506090A JP 4165507 B2 JP4165507 B2 JP 4165507B2
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/02—Materials and properties organic material
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0211424A GB2388709A (en) | 2002-05-17 | 2002-05-17 | Circuit fabrication method |
| PCT/GB2003/002131 WO2003098696A1 (en) | 2002-05-17 | 2003-05-19 | Circuit fabrication method |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008108667A Division JP2008235919A (ja) | 2002-05-17 | 2008-04-18 | 回路、電気光学装置、および回路の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005531134A JP2005531134A (ja) | 2005-10-13 |
| JP2005531134A5 JP2005531134A5 (enExample) | 2006-10-26 |
| JP4165507B2 true JP4165507B2 (ja) | 2008-10-15 |
Family
ID=9936937
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004506090A Expired - Fee Related JP4165507B2 (ja) | 2002-05-17 | 2003-05-19 | 回路の製造方法 |
| JP2008108667A Withdrawn JP2008235919A (ja) | 2002-05-17 | 2008-04-18 | 回路、電気光学装置、および回路の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008108667A Withdrawn JP2008235919A (ja) | 2002-05-17 | 2008-04-18 | 回路、電気光学装置、および回路の製造方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7198885B2 (enExample) |
| EP (1) | EP1456887A1 (enExample) |
| JP (2) | JP4165507B2 (enExample) |
| KR (1) | KR100606182B1 (enExample) |
| CN (1) | CN100472793C (enExample) |
| AU (1) | AU2003227947A1 (enExample) |
| GB (1) | GB2388709A (enExample) |
| TW (1) | TWI253178B (enExample) |
| WO (1) | WO2003098696A1 (enExample) |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4615197B2 (ja) * | 2002-08-30 | 2011-01-19 | シャープ株式会社 | Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法 |
| JP4415653B2 (ja) | 2003-11-19 | 2010-02-17 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| TWI237892B (en) * | 2004-01-13 | 2005-08-11 | Ind Tech Res Inst | Method of forming thin-film transistor devices with electro-static discharge protection |
| GB0400997D0 (en) | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
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| GB2379412A (en) * | 2001-09-10 | 2003-03-12 | Seiko Epson Corp | Deposition of soluble materials |
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| US7198885B2 (en) | 2007-04-03 |
| KR20040015806A (ko) | 2004-02-19 |
| CN100472793C (zh) | 2009-03-25 |
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| CN1533607A (zh) | 2004-09-29 |
| GB0211424D0 (en) | 2002-06-26 |
| US20040235227A1 (en) | 2004-11-25 |
| TW200400644A (en) | 2004-01-01 |
| JP2008235919A (ja) | 2008-10-02 |
| AU2003227947A1 (en) | 2003-12-02 |
| WO2003098696A1 (en) | 2003-11-27 |
| GB2388709A (en) | 2003-11-19 |
| KR100606182B1 (ko) | 2006-08-01 |
| EP1456887A1 (en) | 2004-09-15 |
| JP2005531134A (ja) | 2005-10-13 |
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