GB2388709A - Circuit fabrication method - Google Patents
Circuit fabrication method Download PDFInfo
- Publication number
- GB2388709A GB2388709A GB0211424A GB0211424A GB2388709A GB 2388709 A GB2388709 A GB 2388709A GB 0211424 A GB0211424 A GB 0211424A GB 0211424 A GB0211424 A GB 0211424A GB 2388709 A GB2388709 A GB 2388709A
- Authority
- GB
- United Kingdom
- Prior art keywords
- conductive
- layer
- insulator
- semiconductor
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
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- 239000012212 insulator Substances 0.000 claims abstract description 65
- 238000007641 inkjet printing Methods 0.000 claims abstract description 45
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- 239000005341 toughened glass Substances 0.000 description 2
- OHZAHWOAMVVGEL-UHFFFAOYSA-N 2,2'-bithiophene Chemical compound C1=CSC(C=2SC=CC=2)=C1 OHZAHWOAMVVGEL-UHFFFAOYSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
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- FJAOBQORBYMRNO-UHFFFAOYSA-N f16cupc Chemical compound [Cu+2].[N-]1C(N=C2C3=C(F)C(F)=C(F)C(F)=C3C(N=C3C4=C(F)C(F)=C(F)C(F)=C4C(=N4)[N-]3)=N2)=C(C(F)=C(F)C(F)=C2F)C2=C1N=C1C2=C(F)C(F)=C(F)C(F)=C2C4=N1 FJAOBQORBYMRNO-UHFFFAOYSA-N 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical class [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- CLYVDMAATCIVBF-UHFFFAOYSA-N pigment red 224 Chemical compound C=12C3=CC=C(C(OC4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)OC(=O)C4=CC=C3C1=C42 CLYVDMAATCIVBF-UHFFFAOYSA-N 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 208000016853 pontine tegmental cap dysplasia Diseases 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- YFGMQDNQVFJKTR-UHFFFAOYSA-N ptcdi-c8 Chemical compound C=12C3=CC=C(C(N(CCCCCCCC)C4=O)=O)C2=C4C=CC=1C1=CC=C2C(=O)N(CCCCCCCC)C(=O)C4=CC=C3C1=C42 YFGMQDNQVFJKTR-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133305—Flexible substrates, e.g. plastics, organic film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/02—Materials and properties organic material
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0211424A GB2388709A (en) | 2002-05-17 | 2002-05-17 | Circuit fabrication method |
| US10/482,101 US7198885B2 (en) | 2002-05-17 | 2003-05-19 | Circuit fabrication method |
| JP2004506090A JP4165507B2 (ja) | 2002-05-17 | 2003-05-19 | 回路の製造方法 |
| AU2003227947A AU2003227947A1 (en) | 2002-05-17 | 2003-05-19 | Circuit fabrication method |
| TW092113498A TWI253178B (en) | 2002-05-17 | 2003-05-19 | Circuit fabrication method |
| KR1020047000479A KR100606182B1 (ko) | 2002-05-17 | 2003-05-19 | 회로 제조 방법 |
| CN03800694.4A CN100472793C (zh) | 2002-05-17 | 2003-05-19 | 电路制作方法 |
| EP03725412A EP1456887A1 (en) | 2002-05-17 | 2003-05-19 | Circuit fabrication method |
| PCT/GB2003/002131 WO2003098696A1 (en) | 2002-05-17 | 2003-05-19 | Circuit fabrication method |
| JP2008108667A JP2008235919A (ja) | 2002-05-17 | 2008-04-18 | 回路、電気光学装置、および回路の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0211424A GB2388709A (en) | 2002-05-17 | 2002-05-17 | Circuit fabrication method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0211424D0 GB0211424D0 (en) | 2002-06-26 |
| GB2388709A true GB2388709A (en) | 2003-11-19 |
Family
ID=9936937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0211424A Withdrawn GB2388709A (en) | 2002-05-17 | 2002-05-17 | Circuit fabrication method |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7198885B2 (enExample) |
| EP (1) | EP1456887A1 (enExample) |
| JP (2) | JP4165507B2 (enExample) |
| KR (1) | KR100606182B1 (enExample) |
| CN (1) | CN100472793C (enExample) |
| AU (1) | AU2003227947A1 (enExample) |
| GB (1) | GB2388709A (enExample) |
| TW (1) | TWI253178B (enExample) |
| WO (1) | WO2003098696A1 (enExample) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008041027A1 (en) * | 2006-10-03 | 2008-04-10 | Plastic Logic Limited | Distortion-tolerant processing |
| US7361594B2 (en) | 2003-11-19 | 2008-04-22 | Seiko Epson Corporation | Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus |
| WO2009083438A1 (fr) * | 2007-12-21 | 2009-07-09 | The Swatch Group Research And Development Ltd | Dispositif d ' affichage a matrice active ayant un transistor organique a couches minces |
| WO2011124792A1 (fr) * | 2010-04-08 | 2011-10-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication de deux zones adjacentes en matériaux différents |
| JP2012169502A (ja) * | 2011-02-15 | 2012-09-06 | Fuji Xerox Co Ltd | 電子素子及びその製造方法 |
| US10585456B2 (en) | 2015-08-26 | 2020-03-10 | Lg Display Co., Ltd. | Flexible display device having bending sensing device |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4615197B2 (ja) * | 2002-08-30 | 2011-01-19 | シャープ株式会社 | Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法 |
| TWI237892B (en) * | 2004-01-13 | 2005-08-11 | Ind Tech Res Inst | Method of forming thin-film transistor devices with electro-static discharge protection |
| GB0400997D0 (en) | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
| JP4266842B2 (ja) * | 2004-02-02 | 2009-05-20 | セイコーエプソン株式会社 | 電気光学装置用基板の製造方法及び電気光学装置の製造方法 |
| JP4729855B2 (ja) * | 2004-03-15 | 2011-07-20 | セイコーエプソン株式会社 | 薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器 |
| JP4800594B2 (ja) * | 2004-06-09 | 2011-10-26 | 三菱電機株式会社 | 高周波デバイス |
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| US7361594B2 (en) | 2003-11-19 | 2008-04-22 | Seiko Epson Corporation | Method of manufacturing a thin film transistor, thin film transistor, thin film transistor circuit, electronic device, and electronic apparatus |
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| WO2011124792A1 (fr) * | 2010-04-08 | 2011-10-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication de deux zones adjacentes en matériaux différents |
| FR2958561A1 (fr) * | 2010-04-08 | 2011-10-14 | Commissariat Energie Atomique | Procede de fabrication de deux zones adjacentes en materiaux differents |
| US8889473B2 (en) | 2010-04-08 | 2014-11-18 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for manufacturing two adjacent areas made of different materials |
| JP2012169502A (ja) * | 2011-02-15 | 2012-09-06 | Fuji Xerox Co Ltd | 電子素子及びその製造方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2005531134A (ja) | 2005-10-13 |
| US20040235227A1 (en) | 2004-11-25 |
| JP4165507B2 (ja) | 2008-10-15 |
| EP1456887A1 (en) | 2004-09-15 |
| AU2003227947A1 (en) | 2003-12-02 |
| US7198885B2 (en) | 2007-04-03 |
| KR100606182B1 (ko) | 2006-08-01 |
| TW200400644A (en) | 2004-01-01 |
| TWI253178B (en) | 2006-04-11 |
| CN100472793C (zh) | 2009-03-25 |
| GB0211424D0 (en) | 2002-06-26 |
| JP2008235919A (ja) | 2008-10-02 |
| WO2003098696A1 (en) | 2003-11-27 |
| KR20040015806A (ko) | 2004-02-19 |
| CN1533607A (zh) | 2004-09-29 |
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