CN100472793C - 电路制作方法 - Google Patents

电路制作方法 Download PDF

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Publication number
CN100472793C
CN100472793C CN03800694.4A CN03800694A CN100472793C CN 100472793 C CN100472793 C CN 100472793C CN 03800694 A CN03800694 A CN 03800694A CN 100472793 C CN100472793 C CN 100472793C
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CN
China
Prior art keywords
continuous conduction
conduction bar
electric conductive
layer
strip electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN03800694.4A
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English (en)
Chinese (zh)
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CN1533607A (zh
Inventor
川濑健夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Publication of CN1533607A publication Critical patent/CN1533607A/zh
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Publication of CN100472793C publication Critical patent/CN100472793C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/02—Materials and properties organic material

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
CN03800694.4A 2002-05-17 2003-05-19 电路制作方法 Expired - Fee Related CN100472793C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0211424A GB2388709A (en) 2002-05-17 2002-05-17 Circuit fabrication method
GB0211424.7 2002-05-17

Publications (2)

Publication Number Publication Date
CN1533607A CN1533607A (zh) 2004-09-29
CN100472793C true CN100472793C (zh) 2009-03-25

Family

ID=9936937

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03800694.4A Expired - Fee Related CN100472793C (zh) 2002-05-17 2003-05-19 电路制作方法

Country Status (9)

Country Link
US (1) US7198885B2 (enExample)
EP (1) EP1456887A1 (enExample)
JP (2) JP4165507B2 (enExample)
KR (1) KR100606182B1 (enExample)
CN (1) CN100472793C (enExample)
AU (1) AU2003227947A1 (enExample)
GB (1) GB2388709A (enExample)
TW (1) TWI253178B (enExample)
WO (1) WO2003098696A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594042B (zh) * 2013-03-15 2017-08-01 壯生和壯生視覺關懷公司 具有機半導體電晶體之眼用裝置

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4615197B2 (ja) * 2002-08-30 2011-01-19 シャープ株式会社 Ｔｆｔアレイ基板の製造方法および液晶表示装置の製造方法
JP4415653B2 (ja) 2003-11-19 2010-02-17 セイコーエプソン株式会社 薄膜トランジスタの製造方法
TWI237892B (en) * 2004-01-13 2005-08-11 Ind Tech Res Inst Method of forming thin-film transistor devices with electro-static discharge protection
GB0400997D0 (en) 2004-01-16 2004-02-18 Univ Cambridge Tech N-channel transistor
JP4266842B2 (ja) * 2004-02-02 2009-05-20 セイコーエプソン株式会社 電気光学装置用基板の製造方法及び電気光学装置の製造方法
JP4729855B2 (ja) * 2004-03-15 2011-07-20 セイコーエプソン株式会社 薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器
JP4800594B2 (ja) * 2004-06-09 2011-10-26 三菱電機株式会社 高周波デバイス
US8001455B2 (en) * 2004-10-14 2011-08-16 Daktronics, Inc. Translation table
US8344410B2 (en) 2004-10-14 2013-01-01 Daktronics, Inc. Flexible pixel element and signal distribution means
US7893948B1 (en) 2004-10-14 2011-02-22 Daktronics, Inc. Flexible pixel hardware and method
US7868903B2 (en) 2004-10-14 2011-01-11 Daktronics, Inc. Flexible pixel element fabrication and sealing method
KR101090250B1 (ko) * 2004-10-15 2011-12-06 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
GB0426563D0 (en) * 2004-12-03 2005-01-05 Plastic Logic Ltd Alignment tolerant patterning on flexible substrates
US20060127817A1 (en) * 2004-12-10 2006-06-15 Eastman Kodak Company In-line fabrication of curved surface transistors
US7125495B2 (en) * 2004-12-20 2006-10-24 Palo Alto Research Center, Inc. Large area electronic device with high and low resolution patterned film features
JP2006201217A (ja) 2005-01-18 2006-08-03 Seiko Epson Corp 配線基板、電気光学装置及び電子機器
US7341680B2 (en) 2005-03-02 2008-03-11 Hewlett-Packard Development Company, L.P. Printable composition with nanostructures of first and second types
KR101219035B1 (ko) 2005-05-03 2013-01-07 삼성디스플레이 주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
KR101133767B1 (ko) * 2005-03-09 2012-04-09 삼성전자주식회사 유기 박막 트랜지스터 표시판 및 그 제조 방법
JP2008535223A (ja) * 2005-03-23 2008-08-28 アギア システムズ インコーポレーテッド インプリント・リソグラフィおよび直接描画技術を用いるデバイス製造方法
KR101133766B1 (ko) 2005-03-29 2012-04-09 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
JP4686232B2 (ja) * 2005-03-30 2011-05-25 セイコーエプソン株式会社 半導体装置及び半導体装置の製造方法
JP5023437B2 (ja) * 2005-04-01 2012-09-12 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置の製造方法、及び電子機器の製造方法
GB2424759A (en) * 2005-04-01 2006-10-04 Seiko Epson Corp Inkjet deposition of polythiophene semiconductor material dissolved in halogenated aromatic solvents
JP4254743B2 (ja) * 2005-05-13 2009-04-15 セイコーエプソン株式会社 薄膜トランジスタの製造方法
EP1727219B1 (en) 2005-05-25 2014-05-07 Samsung SDI Germany GmbH Organic thin film transistor and method for producing the same
US7750350B2 (en) * 2005-05-25 2010-07-06 Samsung Mobile Display Co., Ltd. Organic thin film transistor, flat panel display apparatus having the same, method of producing the organic thin film transistor and shadow mask used in the method
US7994509B2 (en) 2005-11-01 2011-08-09 Hewlett-Packard Development Company, L.P. Structure and method for thin film device with stranded conductor
US7462513B2 (en) * 2005-08-22 2008-12-09 Lexmark International, Inc. Methods for making printed fuse devices
JP4905762B2 (ja) * 2005-08-23 2012-03-28 富士フイルム株式会社 光電変換素子、撮像素子、および該光電変換素子の製造方法
US7414262B2 (en) 2005-09-30 2008-08-19 Lexmark International, Inc. Electronic devices and methods for forming the same
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
JP2007281188A (ja) * 2006-04-06 2007-10-25 Seiko Epson Corp トランジスタ、画素電極基板、電気光学装置、電子機器及び半導体素子の製造方法
JP2007329417A (ja) * 2006-06-09 2007-12-20 Seiko Epson Corp 半導体装置、電気光学装置、電子機器及び半導体装置の製造方法
KR101261605B1 (ko) 2006-07-12 2013-05-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
GB0619548D0 (en) * 2006-10-03 2006-11-15 Plastic Logic Ltd Distortion tolerant processing
US7800704B2 (en) * 2006-11-13 2010-09-21 Hannstar Display Corp. Liquid crystal display comprising intersecting common lines
US8035765B2 (en) * 2006-11-13 2011-10-11 Hannstar Display Corp. TFT array substrate, LCD panel and liquid crystal display
JP2008122649A (ja) * 2006-11-13 2008-05-29 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、液晶装置、有機エレクトロルミネッセンス装置、及び電子機器
JP5521270B2 (ja) * 2007-02-21 2014-06-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、および薄膜トランジスタアレイを用いたアクティブマトリクス型ディスプレイ
KR101538281B1 (ko) * 2007-04-13 2015-07-22 가부시키가이샤 니콘 표시 소자의 제조 방법과 제조 장치
JP5343330B2 (ja) * 2007-06-28 2013-11-13 住友化学株式会社 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法
JP5200443B2 (ja) * 2007-07-30 2013-06-05 セイコーエプソン株式会社 有機トランジスタ及びアクティブマトリックス基板
DE102007039041A1 (de) 2007-08-17 2009-02-19 Bundesdruckerei Gmbh Anzeigevorrichtung, Dokument und Verfahren zur Herstellung einer Anzeigevorrichtung
JP2009090637A (ja) 2007-09-18 2009-04-30 Toppan Printing Co Ltd 有機機能層及び有機機能性素子の製造方法並びに有機機能性素子製造装置
US7754542B2 (en) * 2007-12-19 2010-07-13 Palo Alto Research Center Incorporated Printed TFT array
CH705051B1 (fr) * 2007-12-21 2012-12-14 Swatch Group Res & Dev Ltd Dispositif d'affichage à matrice active.
DE102008042259A1 (de) 2008-09-22 2010-04-08 Bundesdruckerei Gmbh Kraftfahrzeug-Elektronikgerät, Kraftfahrzeug, Verfahren zur Anzeige von Daten auf einer Kraftfahrzeug-Anzeigevorrichtung und Computerprogrammprodukt
EP2332194A1 (en) * 2008-10-02 2011-06-15 Philips Intellectual Property & Standards GmbH Oled device with covered shunt line
DE102008043123A1 (de) 2008-10-23 2010-04-29 Bundesdruckerei Gmbh Kraftfahrzeug-Anzeigevorrichtung, Kraftfahrzeug-Elektroniksystem, Kraftfahrzeug, Verfahren zur Anzeige von Daten und Computerprogrammprodukt
DE102008043830A1 (de) 2008-11-18 2010-05-20 Bundesdruckerei Gmbh Kraftfahrzeug-Anzeigevorrichtung, Kraftfahrzeug-Elektroniksystem, Kraftfahrzeug, Verfahren zur Anzeige von Daten und Computerprogrammprodukt
JP5342862B2 (ja) * 2008-12-16 2013-11-13 株式会社島津製作所 光マトリックスデバイスの製造方法
JP2010205973A (ja) * 2009-03-04 2010-09-16 Seiko Epson Corp 回路基板の製造方法、回路基板、電気光学装置及び電子機器
DE102009045544A1 (de) 2009-10-09 2011-05-05 Bundesdruckerei Gmbh Dokument
JP5397175B2 (ja) * 2009-11-13 2014-01-22 セイコーエプソン株式会社 半導体装置用基板及びその製造方法、半導体装置並びに電子機器
FR2958561B1 (fr) 2010-04-08 2012-05-04 Commissariat Energie Atomique Procede de fabrication de deux zones adjacentes en materiaux differents
JP5720288B2 (ja) * 2011-02-15 2015-05-20 富士ゼロックス株式会社 電子素子及びその製造方法
US9156038B2 (en) 2012-03-30 2015-10-13 Rsr Technologies, Inc. Magnetic separation of electrochemical cell materials
JP5907788B2 (ja) * 2012-04-11 2016-04-26 株式会社図研 情報処理装置、情報処理方法、プログラムおよび基板製造システム
CN103793089B (zh) * 2012-10-30 2017-05-17 宸鸿科技(厦门)有限公司 触控面板
US8941128B2 (en) * 2012-11-21 2015-01-27 Intel Corporation Passivation layer for flexible display
US9817525B2 (en) * 2013-07-15 2017-11-14 Novatek Microelectronics Corp. Touch panel
JP2015053411A (ja) * 2013-09-09 2015-03-19 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、および電子機器
CN103681875A (zh) * 2013-12-26 2014-03-26 南京中电熊猫液晶显示科技有限公司 一种具有修复功能的切换薄膜电晶体
CN104505365B (zh) * 2014-12-25 2017-06-30 中国电子科技集团公司第二十九研究所 一种制作含侧面图形的陶瓷薄膜电路的方法及高精度夹持装置
US10585456B2 (en) 2015-08-26 2020-03-10 Lg Display Co., Ltd. Flexible display device having bending sensing device
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法
TWI736695B (zh) * 2017-10-24 2021-08-21 啟耀光電股份有限公司 電子裝置與其製造方法
US10782606B2 (en) * 2018-06-29 2020-09-22 Globalfoundries Inc. Photolithography methods and structures that reduce stochastic defects
CN109346482B (zh) * 2018-09-30 2024-01-05 武汉华星光电技术有限公司 薄膜晶体管阵列基板及其制造方法、显示面板
US11259402B1 (en) 2020-09-08 2022-02-22 United States Of America As Represented By The Secretary Of The Air Force Fabrication of electrical and/or optical crossover signal lines through direct write deposition techniques
TWI893770B (zh) * 2024-04-18 2025-08-11 友達光電股份有限公司 顯示裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0962984A2 (en) * 1998-05-29 1999-12-08 Lucent Technologies Inc. Thin-film transistor monolithically integrated with an organic light-emitting diode
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
WO2001045147A1 (en) * 1999-12-15 2001-06-21 Koninklijke Philips Electronics N.V. Method of manufacturing a transistor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843937B1 (en) * 1997-07-16 2005-01-18 Seiko Epson Corporation Composition for an organic EL element and method of manufacturing the organic EL element
JP3332822B2 (ja) 1997-09-05 2002-10-07 キヤノン株式会社 カラーフィルタ基板の製造方法
DE69840914D1 (de) * 1997-10-14 2009-07-30 Patterning Technologies Ltd Methode zur Herstellung eines elektrischen Kondensators
WO1999050889A2 (en) 1998-03-27 1999-10-07 Trustees Of Princeton University Printed insulators for active and passive electronic devices
DE69918308T2 (de) * 1998-04-10 2004-10-21 E Ink Corp Elektronische anzeige basierend auf organischen feldeffekt-transistoren
WO2001008242A1 (en) * 1999-07-21 2001-02-01 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
EP1208603A1 (en) 1999-08-31 2002-05-29 E Ink Corporation Transistor for an electronically driven display
CN1245769C (zh) * 1999-12-21 2006-03-15 造型逻辑有限公司 溶液加工
GB2379412A (en) * 2001-09-10 2003-03-12 Seiko Epson Corp Deposition of soluble materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
EP0962984A2 (en) * 1998-05-29 1999-12-08 Lucent Technologies Inc. Thin-film transistor monolithically integrated with an organic light-emitting diode
WO2001045147A1 (en) * 1999-12-15 2001-06-21 Koninklijke Philips Electronics N.V. Method of manufacturing a transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI594042B (zh) * 2013-03-15 2017-08-01 壯生和壯生視覺關懷公司 具有機半導體電晶體之眼用裝置

Also Published As

Publication number Publication date
US7198885B2 (en) 2007-04-03
KR20040015806A (ko) 2004-02-19
TWI253178B (en) 2006-04-11
CN1533607A (zh) 2004-09-29
GB0211424D0 (en) 2002-06-26
US20040235227A1 (en) 2004-11-25
TW200400644A (en) 2004-01-01
JP2008235919A (ja) 2008-10-02
AU2003227947A1 (en) 2003-12-02
JP4165507B2 (ja) 2008-10-15
WO2003098696A1 (en) 2003-11-27
GB2388709A (en) 2003-11-19
KR100606182B1 (ko) 2006-08-01
EP1456887A1 (en) 2004-09-15
JP2005531134A (ja) 2005-10-13

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