FR2958561B1 - Procede de fabrication de deux zones adjacentes en materiaux differents - Google Patents

Procede de fabrication de deux zones adjacentes en materiaux differents

Info

Publication number
FR2958561B1
FR2958561B1 FR1052647A FR1052647A FR2958561B1 FR 2958561 B1 FR2958561 B1 FR 2958561B1 FR 1052647 A FR1052647 A FR 1052647A FR 1052647 A FR1052647 A FR 1052647A FR 2958561 B1 FR2958561 B1 FR 2958561B1
Authority
FR
France
Prior art keywords
manufacturing
different materials
zones adjacent
zones
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1052647A
Other languages
English (en)
Other versions
FR2958561A1 (fr
Inventor
Mohamed Benwadih
Christophe Serbutoviez
Jean-Marie Verilhac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1052647A priority Critical patent/FR2958561B1/fr
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to PCT/FR2011/050466 priority patent/WO2011124792A1/fr
Priority to US13/639,284 priority patent/US8889473B2/en
Priority to EP11712973A priority patent/EP2556537A1/fr
Priority to BR112012025054A priority patent/BR112012025054A2/pt
Priority to JP2013503152A priority patent/JP2013526013A/ja
Priority to CN201180017537.3A priority patent/CN102906878B/zh
Publication of FR2958561A1 publication Critical patent/FR2958561A1/fr
Application granted granted Critical
Publication of FR2958561B1 publication Critical patent/FR2958561B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
FR1052647A 2010-04-08 2010-04-08 Procede de fabrication de deux zones adjacentes en materiaux differents Expired - Fee Related FR2958561B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR1052647A FR2958561B1 (fr) 2010-04-08 2010-04-08 Procede de fabrication de deux zones adjacentes en materiaux differents
US13/639,284 US8889473B2 (en) 2010-04-08 2011-03-07 Method for manufacturing two adjacent areas made of different materials
EP11712973A EP2556537A1 (fr) 2010-04-08 2011-03-07 Procédé de fabrication de deux zones adjacentes en matériaux différents
BR112012025054A BR112012025054A2 (pt) 2010-04-08 2011-03-07 processo de fabricação de duas zonas adjacentes em materiais diferentes
PCT/FR2011/050466 WO2011124792A1 (fr) 2010-04-08 2011-03-07 Procédé de fabrication de deux zones adjacentes en matériaux différents
JP2013503152A JP2013526013A (ja) 2010-04-08 2011-03-07 異なる材料からなる二つの隣接した領域の製造方法
CN201180017537.3A CN102906878B (zh) 2010-04-08 2011-03-07 用于制造由不同材料制成的两毗邻区域的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052647A FR2958561B1 (fr) 2010-04-08 2010-04-08 Procede de fabrication de deux zones adjacentes en materiaux differents

Publications (2)

Publication Number Publication Date
FR2958561A1 FR2958561A1 (fr) 2011-10-14
FR2958561B1 true FR2958561B1 (fr) 2012-05-04

Family

ID=42729408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052647A Expired - Fee Related FR2958561B1 (fr) 2010-04-08 2010-04-08 Procede de fabrication de deux zones adjacentes en materiaux differents

Country Status (7)

Country Link
US (1) US8889473B2 (fr)
EP (1) EP2556537A1 (fr)
JP (1) JP2013526013A (fr)
CN (1) CN102906878B (fr)
BR (1) BR112012025054A2 (fr)
FR (1) FR2958561B1 (fr)
WO (1) WO2011124792A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10490746B2 (en) * 2017-03-01 2019-11-26 Palo Alto Research Center Incorporated Selective surface modification of OTFT source/drain electrode by ink jetting F4TCNQ
US10466193B2 (en) 2017-03-01 2019-11-05 Palo Alto Research Center Incorporated Printed gas sensor
FR3105573A1 (fr) * 2019-12-23 2021-06-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d’un circuit intégré sécurisé

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69840914D1 (de) * 1997-10-14 2009-07-30 Patterning Technologies Ltd Methode zur Herstellung eines elektrischen Kondensators
JP3328297B2 (ja) * 1998-03-17 2002-09-24 セイコーエプソン株式会社 表示装置の製造方法
KR100940110B1 (ko) * 1999-12-21 2010-02-02 플라스틱 로직 리미티드 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법
GB2379083A (en) * 2001-08-20 2003-02-26 Seiko Epson Corp Inkjet printing on a substrate using two immiscible liquids
GB0130485D0 (en) * 2001-12-21 2002-02-06 Plastic Logic Ltd Self-aligned printing
GB2388709A (en) * 2002-05-17 2003-11-19 Seiko Epson Corp Circuit fabrication method
GB0321383D0 (en) * 2003-09-12 2003-10-15 Plastic Logic Ltd Polymer circuits
TWI316296B (en) * 2006-09-05 2009-10-21 Ind Tech Res Inst Thin-film transistor and fabrication method thereof
JP5111949B2 (ja) * 2007-06-18 2013-01-09 株式会社日立製作所 薄膜トランジスタの製造方法及び薄膜トランジスタ装置

Also Published As

Publication number Publication date
FR2958561A1 (fr) 2011-10-14
BR112012025054A2 (pt) 2016-06-21
CN102906878A (zh) 2013-01-30
US20130029455A1 (en) 2013-01-31
EP2556537A1 (fr) 2013-02-13
CN102906878B (zh) 2016-04-13
JP2013526013A (ja) 2013-06-20
US8889473B2 (en) 2014-11-18
WO2011124792A1 (fr) 2011-10-13

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