JP4164054B2 - ポリシリコンヒューズを有する半導体装置 - Google Patents
ポリシリコンヒューズを有する半導体装置 Download PDFInfo
- Publication number
- JP4164054B2 JP4164054B2 JP2004254313A JP2004254313A JP4164054B2 JP 4164054 B2 JP4164054 B2 JP 4164054B2 JP 2004254313 A JP2004254313 A JP 2004254313A JP 2004254313 A JP2004254313 A JP 2004254313A JP 4164054 B2 JP4164054 B2 JP 4164054B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polysilicon fuse
- semiconductor device
- polysilicon
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
以下、本発明の第1の実施形態について、図面を参照しながら説明する。
次に、第1の実施形態の変形例について図面を参照して説明する。
次に、第2の実施形態に係る半導体装置のトリミング方法(書き込み方法)について、図面を参照して説明する。
101a 溶断部
102 引き出し配線
103 コンタクト
104 半導体基板
105 熱酸化膜
106 層間絶縁膜
106a 凹部
107 表面保護膜
107a 開口部
108 緩衝膜
109 封止樹脂層
201 部分波形
202 部分波形
Claims (3)
- 溶断部を有するポリシリコンヒューズと、
前記ポリシリコンヒューズを覆うように形成され、前記溶断部上に凹部を有する層間絶縁膜と、
前記層間絶縁膜上に形成され、前記凹部上に開口部を有する表面保護膜と、
前記表面保護膜上に形成され、前記凹部及び前記開口部を充填する緩衝膜と、
前記緩衝膜上に形成された封止樹脂層とを備え、
前記緩衝膜によって、前記封止樹脂層による前記ポリシリコンヒューズに対する膜ストレスが緩和されていることを特徴とする半導体装置。 - 前記緩衝膜は有機絶縁膜であることを特徴とする請求項1に記載の半導体装置。
- 前記有機絶縁膜がポリイミド膜であることを特徴とする請求項2に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004254313A JP4164054B2 (ja) | 2003-10-10 | 2004-09-01 | ポリシリコンヒューズを有する半導体装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003352017 | 2003-10-10 | ||
JP2004254313A JP4164054B2 (ja) | 2003-10-10 | 2004-09-01 | ポリシリコンヒューズを有する半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008150743A Division JP4820846B2 (ja) | 2003-10-10 | 2008-06-09 | ポリシリコンヒューズを有する半導体装置のトリミング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005136381A JP2005136381A (ja) | 2005-05-26 |
JP4164054B2 true JP4164054B2 (ja) | 2008-10-08 |
Family
ID=34656100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004254313A Expired - Fee Related JP4164054B2 (ja) | 2003-10-10 | 2004-09-01 | ポリシリコンヒューズを有する半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4164054B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101817729B (zh) * | 2009-12-14 | 2012-02-29 | 浙江永太科技股份有限公司 | 3,5-二氟-4-(2,2,2-三氟乙氧基)溴苯的制备方法 |
CN101817751B (zh) * | 2009-12-14 | 2012-02-29 | 浙江永太科技股份有限公司 | 一种3,5-二氟-4-(2,2,2-三氟乙氧基)硝基苯化合物及其制备方法 |
US9196585B2 (en) | 2013-12-03 | 2015-11-24 | Fuji Electric Co., Ltd. | Polysilicon fuse, semiconductor device having overlapping polysilicon fuse sections and method of severing polysilicon fuse |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101043841B1 (ko) | 2008-10-14 | 2011-06-22 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 퓨즈 |
JP5712875B2 (ja) * | 2011-09-07 | 2015-05-07 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5906794B2 (ja) * | 2012-02-20 | 2016-04-20 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
-
2004
- 2004-09-01 JP JP2004254313A patent/JP4164054B2/ja not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101817729B (zh) * | 2009-12-14 | 2012-02-29 | 浙江永太科技股份有限公司 | 3,5-二氟-4-(2,2,2-三氟乙氧基)溴苯的制备方法 |
CN101817751B (zh) * | 2009-12-14 | 2012-02-29 | 浙江永太科技股份有限公司 | 一种3,5-二氟-4-(2,2,2-三氟乙氧基)硝基苯化合物及其制备方法 |
US9196585B2 (en) | 2013-12-03 | 2015-11-24 | Fuji Electric Co., Ltd. | Polysilicon fuse, semiconductor device having overlapping polysilicon fuse sections and method of severing polysilicon fuse |
Also Published As
Publication number | Publication date |
---|---|
JP2005136381A (ja) | 2005-05-26 |
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