JP4157189B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP4157189B2
JP4157189B2 JP10465298A JP10465298A JP4157189B2 JP 4157189 B2 JP4157189 B2 JP 4157189B2 JP 10465298 A JP10465298 A JP 10465298A JP 10465298 A JP10465298 A JP 10465298A JP 4157189 B2 JP4157189 B2 JP 4157189B2
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JP
Japan
Prior art keywords
data
voltage
signal
vcc
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP10465298A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1131392A (ja
JPH1131392A5 (enExample
Inventor
智晴 田中
寛 中村
健 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10465298A priority Critical patent/JP4157189B2/ja
Priority to US09/078,137 priority patent/US6134140A/en
Priority to KR1019980018066A priority patent/KR100323554B1/ko
Publication of JPH1131392A publication Critical patent/JPH1131392A/ja
Priority to US09/599,397 priority patent/US6208560B1/en
Priority to US09/767,152 priority patent/US6434055B2/en
Priority to US10/187,285 priority patent/US6549464B2/en
Priority to US10/377,674 priority patent/US6798698B2/en
Priority to US10/920,161 priority patent/US6940752B2/en
Publication of JPH1131392A5 publication Critical patent/JPH1131392A5/ja
Priority to US11/194,799 priority patent/US7224612B2/en
Priority to US11/737,154 priority patent/US7310270B2/en
Priority to US11/929,210 priority patent/US7746707B2/en
Application granted granted Critical
Publication of JP4157189B2 publication Critical patent/JP4157189B2/ja
Priority to US12/781,396 priority patent/US8000147B2/en
Priority to US13/179,714 priority patent/US8223558B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP10465298A 1997-05-14 1998-04-15 不揮発性半導体記憶装置 Expired - Lifetime JP4157189B2 (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP10465298A JP4157189B2 (ja) 1997-05-14 1998-04-15 不揮発性半導体記憶装置
US09/078,137 US6134140A (en) 1997-05-14 1998-05-14 Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells
KR1019980018066A KR100323554B1 (ko) 1997-05-14 1998-05-14 불휘발성반도체메모리장치
US09/599,397 US6208560B1 (en) 1997-05-14 2000-06-22 Nonvolatile semiconductor memory device
US09/767,152 US6434055B2 (en) 1997-05-14 2001-01-23 Nonvolatile semiconductor memory device
US10/187,285 US6549464B2 (en) 1997-05-14 2002-07-02 Nonvolatile semiconductor memory device
US10/377,674 US6798698B2 (en) 1997-05-14 2003-03-04 Nonvolatile semiconductor memory device
US10/920,161 US6940752B2 (en) 1997-05-14 2004-08-18 Nonvolatile semiconductor memory device
US11/194,799 US7224612B2 (en) 1997-05-14 2005-08-02 Nonvolatile semiconductor memory device
US11/737,154 US7310270B2 (en) 1997-05-14 2007-04-19 Nonvolatile semiconductor memory device
US11/929,210 US7746707B2 (en) 1997-05-14 2007-10-30 Nonvolatile semiconductor memory device
US12/781,396 US8000147B2 (en) 1997-05-14 2010-05-17 Nonvolatile semiconductor memory device
US13/179,714 US8223558B2 (en) 1997-05-14 2011-07-11 Nonvolatile semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12449397 1997-05-14
JP9-124493 1997-05-14
JP10465298A JP4157189B2 (ja) 1997-05-14 1998-04-15 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JPH1131392A JPH1131392A (ja) 1999-02-02
JPH1131392A5 JPH1131392A5 (enExample) 2005-07-07
JP4157189B2 true JP4157189B2 (ja) 2008-09-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP10465298A Expired - Lifetime JP4157189B2 (ja) 1997-05-14 1998-04-15 不揮発性半導体記憶装置

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JP (1) JP4157189B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69730736T2 (de) * 1996-12-03 2005-09-22 Daikin Industries, Ltd. Verfahren zum verbinden von modifizierten polytetrafluorethylengegenständen
JP3629144B2 (ja) * 1998-06-01 2005-03-16 株式会社東芝 不揮発性半導体記憶装置
US6314026B1 (en) 1999-02-08 2001-11-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device using local self boost technique
KR100331563B1 (ko) * 1999-12-10 2002-04-06 윤종용 낸드형 플래쉬 메모리소자 및 그 구동방법
EP1191542B1 (en) 2000-09-22 2008-10-29 SAMSUNG ELECTRONICS Co. Ltd. Driving circuits for a memory cell array in a NAND-type flash memory device
JP3850791B2 (ja) * 2001-12-20 2006-11-29 株式会社東芝 不揮発性半導体記憶装置
KR100806327B1 (ko) * 2004-05-05 2008-02-27 샌디스크 코포레이션 비휘발성 메모리의 프로그램 제어를 위한 비트라인 조절방식의 접근법
US7307884B2 (en) 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
US7170785B2 (en) * 2004-09-09 2007-01-30 Macronix International Co., Ltd. Method and apparatus for operating a string of charge trapping memory cells
US7327607B2 (en) * 2004-09-09 2008-02-05 Macronix International Co., Ltd. Method and apparatus for operating nonvolatile memory cells in a series arrangement
WO2007047283A1 (en) * 2005-10-14 2007-04-26 Sandisk Corporation Method for controlled programming of non-volatile memory exhibiting bit line coupling
JP4901348B2 (ja) * 2006-07-20 2012-03-21 株式会社東芝 半導体記憶装置およびその制御方法
KR100843037B1 (ko) * 2007-03-27 2008-07-01 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 소거 방법
KR100908562B1 (ko) 2007-11-29 2009-07-21 주식회사 하이닉스반도체 불휘발성 메모리 소자의 소거 방법
JP5032290B2 (ja) * 2007-12-14 2012-09-26 株式会社東芝 不揮発性半導体記憶装置
KR101016078B1 (ko) * 2009-01-21 2011-02-17 주식회사 하이닉스반도체 불휘발성 메모리 장치 및 그 동작 방법
JP2011258260A (ja) * 2010-06-07 2011-12-22 Toshiba Corp 不揮発性半導体記憶装置

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JPH1131392A (ja) 1999-02-02

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