JP4157184B2 - 高耐圧半導体素子 - Google Patents

高耐圧半導体素子 Download PDF

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Publication number
JP4157184B2
JP4157184B2 JP03625198A JP3625198A JP4157184B2 JP 4157184 B2 JP4157184 B2 JP 4157184B2 JP 03625198 A JP03625198 A JP 03625198A JP 3625198 A JP3625198 A JP 3625198A JP 4157184 B2 JP4157184 B2 JP 4157184B2
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JP
Japan
Prior art keywords
impurity region
type
region
semiconductor element
lateral diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03625198A
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English (en)
Japanese (ja)
Other versions
JPH11233795A (ja
JPH11233795A5 (enExample
Inventor
敬三 平山
英之 舟木
史人 鈴木
明夫 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP03625198A priority Critical patent/JP4157184B2/ja
Priority to US09/251,489 priority patent/US5982015A/en
Publication of JPH11233795A publication Critical patent/JPH11233795A/ja
Priority to US09/393,273 priority patent/US6133617A/en
Publication of JPH11233795A5 publication Critical patent/JPH11233795A5/ja
Application granted granted Critical
Publication of JP4157184B2 publication Critical patent/JP4157184B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/928—Active solid-state devices, e.g. transistors, solid-state diodes with shorted PN or schottky junction other than emitter junction

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP03625198A 1998-02-18 1998-02-18 高耐圧半導体素子 Expired - Fee Related JP4157184B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP03625198A JP4157184B2 (ja) 1998-02-18 1998-02-18 高耐圧半導体素子
US09/251,489 US5982015A (en) 1998-02-18 1999-02-17 High breakdown voltage semiconductor device
US09/393,273 US6133617A (en) 1998-02-18 1999-09-10 High breakdown voltage semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03625198A JP4157184B2 (ja) 1998-02-18 1998-02-18 高耐圧半導体素子

Publications (3)

Publication Number Publication Date
JPH11233795A JPH11233795A (ja) 1999-08-27
JPH11233795A5 JPH11233795A5 (enExample) 2005-05-26
JP4157184B2 true JP4157184B2 (ja) 2008-09-24

Family

ID=12464564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03625198A Expired - Fee Related JP4157184B2 (ja) 1998-02-18 1998-02-18 高耐圧半導体素子

Country Status (2)

Country Link
US (2) US5982015A (enExample)
JP (1) JP4157184B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4157184B2 (ja) * 1998-02-18 2008-09-24 株式会社東芝 高耐圧半導体素子
JP2004296883A (ja) * 2003-03-27 2004-10-21 Sharp Corp 半導体装置とその製造方法
JP4935037B2 (ja) * 2005-02-28 2012-05-23 富士電機株式会社 半導体装置
JP4944460B2 (ja) * 2005-03-30 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP2008085187A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
JP2008085186A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
JP5434961B2 (ja) 2010-08-04 2014-03-05 株式会社デンソー 横型ダイオードを有する半導体装置
JP5138748B2 (ja) * 2010-09-08 2013-02-06 三菱電機株式会社 半導体装置
JP5790214B2 (ja) * 2010-09-09 2015-10-07 株式会社デンソー 横型の絶縁ゲート型バイポーラトランジスタ
JP5646948B2 (ja) * 2010-10-19 2014-12-24 ローム株式会社 半導体装置
JP5711646B2 (ja) * 2010-11-16 2015-05-07 株式会社豊田中央研究所 ダイオード
JP5739767B2 (ja) * 2011-08-23 2015-06-24 株式会社東芝 誘電体分離基板および半導体装置
CN103972272A (zh) * 2014-04-18 2014-08-06 苏州锝耀电子有限公司 高可靠性表面安装器件
US10580906B1 (en) * 2018-10-01 2020-03-03 Nxp B.V. Semiconductor device comprising a PN junction diode
WO2021106939A1 (ja) * 2019-11-29 2021-06-03 ローム株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438220A (en) * 1987-02-26 1995-08-01 Kabushiki Kaisha Toshiba High breakdown voltage semiconductor device
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP2859789B2 (ja) * 1992-11-13 1999-02-24 ローム株式会社 フォトダイオードアレイおよびその製法
JP4157184B2 (ja) * 1998-02-18 2008-09-24 株式会社東芝 高耐圧半導体素子

Also Published As

Publication number Publication date
JPH11233795A (ja) 1999-08-27
US6133617A (en) 2000-10-17
US5982015A (en) 1999-11-09

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