JP4154165B2 - 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置 - Google Patents

光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置 Download PDF

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Publication number
JP4154165B2
JP4154165B2 JP2002104028A JP2002104028A JP4154165B2 JP 4154165 B2 JP4154165 B2 JP 4154165B2 JP 2002104028 A JP2002104028 A JP 2002104028A JP 2002104028 A JP2002104028 A JP 2002104028A JP 4154165 B2 JP4154165 B2 JP 4154165B2
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semiconductor region
photoelectric conversion
conductivity type
output
photodiode
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JP2002104028A
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JP2003298102A5 (enExample
JP2003298102A (ja
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徹 小泉
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Canon Inc
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Canon Inc
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Priority to US10/407,264 priority patent/US6956273B2/en
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Publication of JP2003298102A5 publication Critical patent/JP2003298102A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2002104028A 2002-04-05 2002-04-05 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置 Expired - Fee Related JP4154165B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002104028A JP4154165B2 (ja) 2002-04-05 2002-04-05 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置
US10/407,264 US6956273B2 (en) 2002-04-05 2003-04-04 Photoelectric conversion element and solid-state image sensing device, camera, and image input apparatus using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002104028A JP4154165B2 (ja) 2002-04-05 2002-04-05 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置

Publications (3)

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JP2003298102A JP2003298102A (ja) 2003-10-17
JP2003298102A5 JP2003298102A5 (enExample) 2007-05-24
JP4154165B2 true JP4154165B2 (ja) 2008-09-24

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US (1) US6956273B2 (enExample)
JP (1) JP4154165B2 (enExample)

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US7189951B2 (en) * 2002-04-09 2007-03-13 Canon Kabushiki Kaisha Solid-state image sensing apparatus and image sensing system
US6753585B1 (en) * 2002-12-05 2004-06-22 National Semiconductor Corporation Vertical color photo-detector with increased sensitivity and compatible video interface
JP4219755B2 (ja) * 2003-07-16 2009-02-04 ローム株式会社 イメージセンサの製造方法およびイメージセンサ
US7541627B2 (en) * 2004-03-08 2009-06-02 Foveon, Inc. Method and apparatus for improving sensitivity in vertical color CMOS image sensors
JP2005269526A (ja) * 2004-03-22 2005-09-29 Fuji Photo Film Co Ltd カラーセンサー及びカラー撮像システム
JP5369362B2 (ja) * 2005-03-01 2013-12-18 ソニー株式会社 物理情報取得装置およびその製造方法
CN101151735B (zh) * 2005-11-22 2010-09-08 佛文恩股份有限公司 具有全分辨率顶层和较低分辨率下层的垂直滤色片传感器组阵列
US7633134B2 (en) 2005-12-29 2009-12-15 Jaroslav Hynecek Stratified photodiode for high resolution CMOS image sensor implemented with STI technology
KR100790224B1 (ko) 2005-12-29 2008-01-02 매그나칩 반도체 유한회사 Ｓｔｉ 기술로 구현된 고해상도 ｃｍｏｓ 이미지 센서를위한 성층형 포토다이오드
JP4396684B2 (ja) * 2006-10-04 2010-01-13 ソニー株式会社 固体撮像装置の製造方法
TWI346393B (en) * 2007-07-05 2011-08-01 Univ Nat Taiwan A method for forming a p-n junction photodiode and an apparatus for the same
CN101459184B (zh) * 2007-12-13 2011-03-23 中芯国际集成电路制造(上海)有限公司 在cmos上感测图像的系统和方法
JP5189391B2 (ja) * 2008-03-27 2013-04-24 ラピスセミコンダクタ株式会社 光センサ
KR20100022670A (ko) * 2008-08-20 2010-03-03 크로스텍 캐피탈, 엘엘씨 전기적 제어가능한 피닝층을 갖는 이미지 센서의 픽셀
JP5552768B2 (ja) * 2009-07-27 2014-07-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US20110317048A1 (en) * 2010-06-29 2011-12-29 Aptina Imaging Corporation Image sensor with dual layer photodiode structure
US8866945B2 (en) 2010-09-26 2014-10-21 Hiok Nam Tay Color image sampling and reconstruction
FR2969390B1 (fr) * 2010-12-15 2014-09-26 St Microelectronics Rousset Dispositif d'imagerie avec filtrage du rayonnement infrarouge.
JP6045136B2 (ja) * 2011-01-31 2016-12-14 キヤノン株式会社 光電変換装置
JP5843527B2 (ja) 2011-09-05 2016-01-13 キヤノン株式会社 光電変換装置
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US9142580B2 (en) 2012-08-10 2015-09-22 Canon Kabushiki Kaisha Image pickup apparatus and image pickup system
JP6188134B2 (ja) * 2013-07-11 2017-08-30 学校法人 東洋大学 半導体装置
US10411049B2 (en) 2015-11-29 2019-09-10 X-Fab Semiconductor Foundries Gmbh Optical sensor having two taps for photon-generated electrons of visible and IR light
JP6933543B2 (ja) * 2017-09-29 2021-09-08 エイブリック株式会社 半導体光検出装置および特定波長の光検出方法
JP7747309B2 (ja) * 2021-05-14 2025-10-01 マイクロシグナル株式会社 光検出装置

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US3860956A (en) * 1972-03-17 1975-01-14 Matsushita Electric Industrial Co Ltd Color target and method of manufacturing same
JPH01304786A (ja) * 1988-06-01 1989-12-08 Mitsubishi Electric Corp 光発電素子
US6127692A (en) * 1989-08-04 2000-10-03 Canon Kabushiki Kaisha Photoelectric conversion apparatus
JP2662062B2 (ja) * 1989-12-15 1997-10-08 キヤノン株式会社 光電変換装置
JP3242495B2 (ja) * 1993-07-01 2001-12-25 シャープ株式会社 多層膜フィルタ付き受光素子及びその製造方法
JP3152328B2 (ja) * 1994-03-22 2001-04-03 キヤノン株式会社 多結晶シリコンデバイス
JP2878137B2 (ja) * 1994-06-29 1999-04-05 シャープ株式会社 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法
ATE276284T1 (de) * 1995-12-01 2004-10-15 Chevron Phillips Chemical Co Polymerisationsverfahren
US5841180A (en) * 1996-03-27 1998-11-24 Canon Kabushiki Kaisha Photoelectric conversion device, method of driving photoelectric conversion device, and system having the device
JP3935237B2 (ja) * 1997-03-11 2007-06-20 キヤノン株式会社 光電気変換体及び建材
US6606120B1 (en) * 1998-04-24 2003-08-12 Foveon, Inc. Multiple storage node full color active pixel sensors
US5965875A (en) * 1998-04-24 1999-10-12 Foveon, Inc. Color separation in an active pixel cell imaging array using a triple-well structure
JP2000077640A (ja) * 1998-06-19 2000-03-14 Canon Inc 画像読み取り装置および放射線撮像装置
JP2000196060A (ja) * 1998-12-24 2000-07-14 Nec Corp 固体撮像装置およびその製造方法

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US6956273B2 (en) 2005-10-18
JP2003298102A (ja) 2003-10-17

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