JP4152589B2 - 反射防止被覆の選択的エッチング法 - Google Patents

反射防止被覆の選択的エッチング法 Download PDF

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Publication number
JP4152589B2
JP4152589B2 JP2000536100A JP2000536100A JP4152589B2 JP 4152589 B2 JP4152589 B2 JP 4152589B2 JP 2000536100 A JP2000536100 A JP 2000536100A JP 2000536100 A JP2000536100 A JP 2000536100A JP 4152589 B2 JP4152589 B2 JP 4152589B2
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Japan
Prior art keywords
etching
etchant
weight
antireflective coating
oxide
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Expired - Lifetime
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JP2000536100A
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Japanese (ja)
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JP2002507057A5 (https=
JP2002507057A (ja
Inventor
ケビン、ジェームズ、トーレク
リー、フーンチー
ベッジ、サティシュ
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000536100A 1998-03-13 1999-01-28 反射防止被覆の選択的エッチング法 Expired - Lifetime JP4152589B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/042,086 US5981401A (en) 1998-03-13 1998-03-13 Method for selective etching of anitreflective coatings
US09/042,086 1998-03-13
PCT/US1999/001696 WO1999046808A1 (en) 1998-03-13 1999-01-28 Selective wet etching of inorganic antireflective coatings

Publications (3)

Publication Number Publication Date
JP2002507057A JP2002507057A (ja) 2002-03-05
JP2002507057A5 JP2002507057A5 (https=) 2008-05-29
JP4152589B2 true JP4152589B2 (ja) 2008-09-17

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ID=21919957

Family Applications (1)

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JP2000536100A Expired - Lifetime JP4152589B2 (ja) 1998-03-13 1999-01-28 反射防止被覆の選択的エッチング法

Country Status (6)

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US (3) US5981401A (https=)
EP (1) EP1062691B1 (https=)
JP (1) JP4152589B2 (https=)
KR (1) KR100575128B1 (https=)
AU (1) AU2563799A (https=)
WO (1) WO1999046808A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127262A (en) * 1996-06-28 2000-10-03 Applied Materials, Inc. Method and apparatus for depositing an etch stop layer
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings
US6294459B1 (en) * 1998-09-03 2001-09-25 Micron Technology, Inc. Anti-reflective coatings and methods for forming and using same
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
US6291361B1 (en) * 1999-03-24 2001-09-18 Conexant Systems, Inc. Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films
US6391793B2 (en) 1999-08-30 2002-05-21 Micron Technology, Inc. Compositions for etching silicon with high selectivity to oxides and methods of using same
US6258729B1 (en) * 1999-09-02 2001-07-10 Micron Technology, Inc. Oxide etching method and structures resulting from same
US6319835B1 (en) * 2000-02-25 2001-11-20 Shipley Company, L.L.C. Stripping method
KR100366624B1 (ko) * 2000-07-19 2003-01-09 삼성전자 주식회사 반사 방지막을 이용하는 반도체 소자 제조방법
US6589884B1 (en) 2000-08-31 2003-07-08 Micron Technology, Inc. Method of forming an inset in a tungsten silicide layer in a transistor gate stack
US6391794B1 (en) 2000-12-07 2002-05-21 Micron Technology, Inc. Composition and method for cleaning residual debris from semiconductor surfaces
US6573175B1 (en) 2001-11-30 2003-06-03 Micron Technology, Inc. Dry low k film application for interlevel dielectric and method of cleaning etched features
US6853043B2 (en) * 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
WO2005045895A2 (en) * 2003-10-28 2005-05-19 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US7468323B2 (en) * 2004-02-27 2008-12-23 Micron Technology, Inc. Method of forming high aspect ratio structures
KR100538884B1 (ko) * 2004-03-30 2005-12-23 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
JP4530146B2 (ja) * 2004-08-18 2010-08-25 三菱瓦斯化学株式会社 洗浄液および洗浄法。
US7605033B2 (en) * 2004-09-01 2009-10-20 Micron Technology, Inc. Low resistance peripheral local interconnect contacts with selective wet strip of titanium
US8283258B2 (en) 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
KR101627509B1 (ko) * 2010-03-04 2016-06-08 삼성전자주식회사 식각액, 식각액을 사용한 게이트 절연막의 형성 방법 및 식각액을 사용한 반도체 소자의 제조 방법
US9460934B2 (en) 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
WO2015027235A1 (en) * 2013-08-23 2015-02-26 Natcore Technology, Inc. System and method for black silicon etching utilizing thin fluid layers

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
JPS60137024A (ja) * 1983-12-26 1985-07-20 Matsushita Electronics Corp 窒化珪素膜のエツチング方法
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
US4746397A (en) * 1986-01-17 1988-05-24 Matsushita Electric Industrial Co., Ltd. Treatment method for plate-shaped substrate
US5022961B1 (en) * 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
US5472562A (en) * 1994-08-05 1995-12-05 At&T Corp. Method of etching silicon nitride
US5449639A (en) * 1994-10-24 1995-09-12 Taiwan Semiconductor Manufacturing Company Ltd. Disposable metal anti-reflection coating process used together with metal dry/wet etch
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
EP0758797A1 (en) * 1995-08-11 1997-02-19 AT&T Corp. Method of etching silicon nitride
JP3402022B2 (ja) * 1995-11-07 2003-04-28 三菱電機株式会社 半導体装置の製造方法
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
TW313701B (en) * 1996-10-23 1997-08-21 United Microelectronics Corp Manufacturing method of polysilicon conductive line
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
US5883011A (en) * 1997-06-18 1999-03-16 Vlsi Technology, Inc. Method of removing an inorganic antireflective coating from a semiconductor substrate
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings

Also Published As

Publication number Publication date
KR100575128B1 (ko) 2006-04-28
AU2563799A (en) 1999-09-27
US6103637A (en) 2000-08-15
EP1062691B1 (en) 2011-05-18
JP2002507057A (ja) 2002-03-05
US6200909B1 (en) 2001-03-13
US5981401A (en) 1999-11-09
KR20010041688A (ko) 2001-05-25
EP1062691A1 (en) 2000-12-27
WO1999046808A1 (en) 1999-09-16

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