JP4152589B2 - 反射防止被覆の選択的エッチング法 - Google Patents

反射防止被覆の選択的エッチング法 Download PDF

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Publication number
JP4152589B2
JP4152589B2 JP2000536100A JP2000536100A JP4152589B2 JP 4152589 B2 JP4152589 B2 JP 4152589B2 JP 2000536100 A JP2000536100 A JP 2000536100A JP 2000536100 A JP2000536100 A JP 2000536100A JP 4152589 B2 JP4152589 B2 JP 4152589B2
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Japan
Prior art keywords
etching
etchant
weight
antireflective coating
oxide
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Expired - Lifetime
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JP2000536100A
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English (en)
Japanese (ja)
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JP2002507057A5 (enExample
JP2002507057A (ja
Inventor
ケビン、ジェームズ、トーレク
リー、フーンチー
ベッジ、サティシュ
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Micron Technology Inc
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Micron Technology Inc
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Publication of JP2002507057A5 publication Critical patent/JP2002507057A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000536100A 1998-03-13 1999-01-28 反射防止被覆の選択的エッチング法 Expired - Lifetime JP4152589B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/042,086 US5981401A (en) 1998-03-13 1998-03-13 Method for selective etching of anitreflective coatings
US09/042,086 1998-03-13
PCT/US1999/001696 WO1999046808A1 (en) 1998-03-13 1999-01-28 Selective wet etching of inorganic antireflective coatings

Publications (3)

Publication Number Publication Date
JP2002507057A JP2002507057A (ja) 2002-03-05
JP2002507057A5 JP2002507057A5 (enExample) 2008-05-29
JP4152589B2 true JP4152589B2 (ja) 2008-09-17

Family

ID=21919957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000536100A Expired - Lifetime JP4152589B2 (ja) 1998-03-13 1999-01-28 反射防止被覆の選択的エッチング法

Country Status (6)

Country Link
US (3) US5981401A (enExample)
EP (1) EP1062691B1 (enExample)
JP (1) JP4152589B2 (enExample)
KR (1) KR100575128B1 (enExample)
AU (1) AU2563799A (enExample)
WO (1) WO1999046808A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127262A (en) * 1996-06-28 2000-10-03 Applied Materials, Inc. Method and apparatus for depositing an etch stop layer
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings
US6294459B1 (en) * 1998-09-03 2001-09-25 Micron Technology, Inc. Anti-reflective coatings and methods for forming and using same
JP4224652B2 (ja) * 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
US6291361B1 (en) * 1999-03-24 2001-09-18 Conexant Systems, Inc. Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films
US6391793B2 (en) 1999-08-30 2002-05-21 Micron Technology, Inc. Compositions for etching silicon with high selectivity to oxides and methods of using same
US6258729B1 (en) 1999-09-02 2001-07-10 Micron Technology, Inc. Oxide etching method and structures resulting from same
US6319835B1 (en) * 2000-02-25 2001-11-20 Shipley Company, L.L.C. Stripping method
KR100366624B1 (ko) * 2000-07-19 2003-01-09 삼성전자 주식회사 반사 방지막을 이용하는 반도체 소자 제조방법
US6589884B1 (en) 2000-08-31 2003-07-08 Micron Technology, Inc. Method of forming an inset in a tungsten silicide layer in a transistor gate stack
US6391794B1 (en) 2000-12-07 2002-05-21 Micron Technology, Inc. Composition and method for cleaning residual debris from semiconductor surfaces
US6573175B1 (en) 2001-11-30 2003-06-03 Micron Technology, Inc. Dry low k film application for interlevel dielectric and method of cleaning etched features
US6853043B2 (en) * 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
WO2005045895A2 (en) * 2003-10-28 2005-05-19 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US7468323B2 (en) * 2004-02-27 2008-12-23 Micron Technology, Inc. Method of forming high aspect ratio structures
KR100538884B1 (ko) * 2004-03-30 2005-12-23 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
JP4530146B2 (ja) * 2004-08-18 2010-08-25 三菱瓦斯化学株式会社 洗浄液および洗浄法。
US7605033B2 (en) 2004-09-01 2009-10-20 Micron Technology, Inc. Low resistance peripheral local interconnect contacts with selective wet strip of titanium
US8283258B2 (en) 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
KR101627509B1 (ko) * 2010-03-04 2016-06-08 삼성전자주식회사 식각액, 식각액을 사용한 게이트 절연막의 형성 방법 및 식각액을 사용한 반도체 소자의 제조 방법
US9460934B2 (en) * 2013-03-15 2016-10-04 Globalfoundries Inc. Wet strip process for an antireflective coating layer
US9306094B2 (en) 2013-08-23 2016-04-05 Natcore Technology, Inc. System and method for black silicon etching utilizing thin fluid layers

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979241A (en) * 1968-12-28 1976-09-07 Fujitsu Ltd. Method of etching films of silicon nitride and silicon dioxide
US3867218A (en) * 1973-04-25 1975-02-18 Philips Corp Method of etching a pattern in a silicon nitride layer
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
US4269654A (en) * 1977-11-18 1981-05-26 Rca Corporation Silicon nitride and silicon oxide etchant
JPS60137024A (ja) * 1983-12-26 1985-07-20 Matsushita Electronics Corp 窒化珪素膜のエツチング方法
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
US4746397A (en) * 1986-01-17 1988-05-24 Matsushita Electric Industrial Co., Ltd. Treatment method for plate-shaped substrate
US5022961B1 (en) * 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
US5472562A (en) * 1994-08-05 1995-12-05 At&T Corp. Method of etching silicon nitride
US5449639A (en) * 1994-10-24 1995-09-12 Taiwan Semiconductor Manufacturing Company Ltd. Disposable metal anti-reflection coating process used together with metal dry/wet etch
US5592016A (en) * 1995-04-14 1997-01-07 Actel Corporation Antifuse with improved antifuse material
EP0758797A1 (en) * 1995-08-11 1997-02-19 AT&T Corp. Method of etching silicon nitride
JP3402022B2 (ja) * 1995-11-07 2003-04-28 三菱電機株式会社 半導体装置の製造方法
JPH09275091A (ja) * 1996-04-03 1997-10-21 Mitsubishi Electric Corp 半導体窒化膜エッチング装置
TW313701B (en) * 1996-10-23 1997-08-21 United Microelectronics Corp Manufacturing method of polysilicon conductive line
US5885903A (en) * 1997-01-22 1999-03-23 Micron Technology, Inc. Process for selectively etching silicon nitride in the presence of silicon oxide
US5883011A (en) * 1997-06-18 1999-03-16 Vlsi Technology, Inc. Method of removing an inorganic antireflective coating from a semiconductor substrate
US5965465A (en) * 1997-09-18 1999-10-12 International Business Machines Corporation Etching of silicon nitride
US5981401A (en) * 1998-03-13 1999-11-09 Micron Technology, Inc. Method for selective etching of anitreflective coatings

Also Published As

Publication number Publication date
US5981401A (en) 1999-11-09
US6103637A (en) 2000-08-15
AU2563799A (en) 1999-09-27
EP1062691A1 (en) 2000-12-27
KR100575128B1 (ko) 2006-04-28
KR20010041688A (ko) 2001-05-25
US6200909B1 (en) 2001-03-13
EP1062691B1 (en) 2011-05-18
JP2002507057A (ja) 2002-03-05
WO1999046808A1 (en) 1999-09-16

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