JP4149054B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP4149054B2
JP4149054B2 JP33744898A JP33744898A JP4149054B2 JP 4149054 B2 JP4149054 B2 JP 4149054B2 JP 33744898 A JP33744898 A JP 33744898A JP 33744898 A JP33744898 A JP 33744898A JP 4149054 B2 JP4149054 B2 JP 4149054B2
Authority
JP
Japan
Prior art keywords
layer
impurity concentration
contact
concentration
positive electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP33744898A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000164922A (ja
JP2000164922A5 (enExample
Inventor
大介 花岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP33744898A priority Critical patent/JP4149054B2/ja
Publication of JP2000164922A publication Critical patent/JP2000164922A/ja
Publication of JP2000164922A5 publication Critical patent/JP2000164922A5/ja
Application granted granted Critical
Publication of JP4149054B2 publication Critical patent/JP4149054B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP33744898A 1998-11-27 1998-11-27 半導体装置 Expired - Lifetime JP4149054B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33744898A JP4149054B2 (ja) 1998-11-27 1998-11-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33744898A JP4149054B2 (ja) 1998-11-27 1998-11-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2000164922A JP2000164922A (ja) 2000-06-16
JP2000164922A5 JP2000164922A5 (enExample) 2005-08-11
JP4149054B2 true JP4149054B2 (ja) 2008-09-10

Family

ID=18308737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33744898A Expired - Lifetime JP4149054B2 (ja) 1998-11-27 1998-11-27 半導体装置

Country Status (1)

Country Link
JP (1) JP4149054B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP2002289914A (ja) * 2001-03-28 2002-10-04 Pioneer Electronic Corp 窒化物半導体素子
EP1403932B1 (en) * 2001-07-04 2012-09-05 Nichia Corporation Light emitting nitride semiconductor device
WO2005069388A1 (ja) * 2004-01-20 2005-07-28 Nichia Corporation 半導体発光素子
US7615798B2 (en) 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
WO2005106979A1 (ja) * 2004-04-28 2005-11-10 Mitsubishi Cable Industries, Ltd. 窒化物半導体発光素子
US20080048194A1 (en) * 2004-06-14 2008-02-28 Hiromitsu Kudo Nitride Semiconductor Light-Emitting Device
KR100662191B1 (ko) 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2007227832A (ja) * 2006-02-27 2007-09-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子
JP4261592B2 (ja) 2007-04-16 2009-04-30 三菱電機株式会社 窒化物半導体発光素子
JP5191843B2 (ja) * 2008-09-09 2013-05-08 株式会社東芝 半導体発光素子及びウェーハ
JP5423026B2 (ja) * 2009-02-09 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US8742440B2 (en) 2010-02-19 2014-06-03 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element and method for producing same
JP5533093B2 (ja) * 2010-03-18 2014-06-25 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5175918B2 (ja) 2010-12-01 2013-04-03 株式会社東芝 半導体発光素子
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5994420B2 (ja) * 2012-06-21 2016-09-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP7228176B2 (ja) * 2017-11-10 2023-02-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
CN114242862B (zh) * 2021-12-22 2024-02-27 淮安澳洋顺昌光电技术有限公司 Led芯片及其制备方法
CN119486388B (zh) * 2024-11-21 2025-10-03 江西兆驰半导体有限公司 发光二极管芯片及其制备方法、led

Also Published As

Publication number Publication date
JP2000164922A (ja) 2000-06-16

Similar Documents

Publication Publication Date Title
JP4149054B2 (ja) 半導体装置
JP4872450B2 (ja) 窒化物半導体発光素子
JP5050574B2 (ja) Ｉｉｉ族窒化物系半導体発光素子
US6881602B2 (en) Gallium nitride-based semiconductor light emitting device and method
CN101689586B (zh) 氮化物半导体发光元件和氮化物半导体的制造方法
JP4954536B2 (ja) 窒化物半導体発光素子
CN100573942C (zh) 氮化物半导体发光元件
CN101188264B (zh) 氮化物半导体发光器件
JP2890390B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP2006527500A (ja) 窒化物半導体発光素子
CN101188263A (zh) 氮化物半导体发光器件的制造方法
JPH0715041A (ja) 窒化ガリウム系化合物半導体発光素子
JP6686172B2 (ja) 窒化物半導体発光素子
JPH11340509A (ja) 窒化物半導体素子
KR20050041824A (ko) 발광 장치 및 발광 장치 제조 방법
JP2001119102A (ja) Ｉｉｉ族窒化物系化合物半導体レーザダイオード
JP2008545266A (ja) 窒化物半導体ｌｅｄ及びその製造方法
JP2006332258A (ja) 窒化物半導体装置及びその製造方法
JP2003023179A (ja) ｐ型ＩＩＩ族窒化物半導体およびその作製方法および半導体装置およびその作製方法
KR20070081862A (ko) 질화물 반도체 발광소자 및 그 제조 방법
JP2006339427A (ja) 窒化物半導体発光ダイオード用エピタキシャルウエハの製造方法、窒化物半導体発光ダイオード用エピタキシャルウエハ、及び窒化物半導体発光ダイオード
JP3484997B2 (ja) 窒化ガリウム系化合物半導体発光素子
JP4200115B2 (ja) カーボンドープ半導体膜、半導体素子、及びこれらの製造方法
JP2011171431A (ja) 半導体発光装置及びその製造方法
JP3216596B2 (ja) 窒化ガリウム系化合物半導体発光素子

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050126

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20050126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20071113

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071120

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080325

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080617

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080625

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110704

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110704

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120704

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120704

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130704

Year of fee payment: 5

EXPY Cancellation because of completion of term