JP2000164922A5 - - Google Patents

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Publication number
JP2000164922A5
JP2000164922A5 JP1998337448A JP33744898A JP2000164922A5 JP 2000164922 A5 JP2000164922 A5 JP 2000164922A5 JP 1998337448 A JP1998337448 A JP 1998337448A JP 33744898 A JP33744898 A JP 33744898A JP 2000164922 A5 JP2000164922 A5 JP 2000164922A5
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JP
Japan
Prior art keywords
layer
impurity concentration
acceptor impurity
semiconductor device
type
Prior art date
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Application number
JP1998337448A
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English (en)
Japanese (ja)
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JP2000164922A (ja
JP4149054B2 (ja
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Priority to JP33744898A priority Critical patent/JP4149054B2/ja
Priority claimed from JP33744898A external-priority patent/JP4149054B2/ja
Publication of JP2000164922A publication Critical patent/JP2000164922A/ja
Publication of JP2000164922A5 publication Critical patent/JP2000164922A5/ja
Application granted granted Critical
Publication of JP4149054B2 publication Critical patent/JP4149054B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP33744898A 1998-11-27 1998-11-27 半導体装置 Expired - Lifetime JP4149054B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33744898A JP4149054B2 (ja) 1998-11-27 1998-11-27 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33744898A JP4149054B2 (ja) 1998-11-27 1998-11-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2000164922A JP2000164922A (ja) 2000-06-16
JP2000164922A5 true JP2000164922A5 (enExample) 2005-08-11
JP4149054B2 JP4149054B2 (ja) 2008-09-10

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ID=18308737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33744898A Expired - Lifetime JP4149054B2 (ja) 1998-11-27 1998-11-27 半導体装置

Country Status (1)

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JP (1) JP4149054B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP2002289914A (ja) * 2001-03-28 2002-10-04 Pioneer Electronic Corp 窒化物半導体素子
EP1403932B1 (en) * 2001-07-04 2012-09-05 Nichia Corporation Light emitting nitride semiconductor device
WO2005069388A1 (ja) * 2004-01-20 2005-07-28 Nichia Corporation 半導体発光素子
US7615798B2 (en) 2004-03-29 2009-11-10 Nichia Corporation Semiconductor light emitting device having an electrode made of a conductive oxide
WO2005106979A1 (ja) * 2004-04-28 2005-11-10 Mitsubishi Cable Industries, Ltd. 窒化物半導体発光素子
US20080048194A1 (en) * 2004-06-14 2008-02-28 Hiromitsu Kudo Nitride Semiconductor Light-Emitting Device
KR100662191B1 (ko) 2004-12-23 2006-12-27 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2007227832A (ja) * 2006-02-27 2007-09-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子
JP4261592B2 (ja) 2007-04-16 2009-04-30 三菱電機株式会社 窒化物半導体発光素子
JP5191843B2 (ja) * 2008-09-09 2013-05-08 株式会社東芝 半導体発光素子及びウェーハ
JP5423026B2 (ja) * 2009-02-09 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
US8742440B2 (en) 2010-02-19 2014-06-03 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element and method for producing same
JP5533093B2 (ja) * 2010-03-18 2014-06-25 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5175918B2 (ja) 2010-12-01 2013-04-03 株式会社東芝 半導体発光素子
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5994420B2 (ja) * 2012-06-21 2016-09-21 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP7228176B2 (ja) * 2017-11-10 2023-02-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
CN114242862B (zh) * 2021-12-22 2024-02-27 淮安澳洋顺昌光电技术有限公司 Led芯片及其制备方法
CN119486388B (zh) * 2024-11-21 2025-10-03 江西兆驰半导体有限公司 发光二极管芯片及其制备方法、led

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