JPH1140887A5 - - Google Patents

Info

Publication number
JPH1140887A5
JPH1140887A5 JP1998125862A JP12586298A JPH1140887A5 JP H1140887 A5 JPH1140887 A5 JP H1140887A5 JP 1998125862 A JP1998125862 A JP 1998125862A JP 12586298 A JP12586298 A JP 12586298A JP H1140887 A5 JPH1140887 A5 JP H1140887A5
Authority
JP
Japan
Prior art keywords
layer
intermediate layer
gallium nitride
nitride material
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998125862A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1140887A (ja
Filing date
Publication date
Priority claimed from US08/862,461 external-priority patent/US6100586A/en
Application filed filed Critical
Publication of JPH1140887A publication Critical patent/JPH1140887A/ja
Publication of JPH1140887A5 publication Critical patent/JPH1140887A5/ja
Pending legal-status Critical Current

Links

JP10125862A 1997-05-23 1998-05-08 窒化ガリウム系用低電圧降下電気接点 Pending JPH1140887A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US862,461 1997-05-23
US08/862,461 US6100586A (en) 1997-05-23 1997-05-23 Low voltage-drop electrical contact for gallium (aluminum, indium) nitride

Publications (2)

Publication Number Publication Date
JPH1140887A JPH1140887A (ja) 1999-02-12
JPH1140887A5 true JPH1140887A5 (enExample) 2006-11-09

Family

ID=25338547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10125862A Pending JPH1140887A (ja) 1997-05-23 1998-05-08 窒化ガリウム系用低電圧降下電気接点

Country Status (5)

Country Link
US (1) US6100586A (enExample)
EP (1) EP0880181B1 (enExample)
JP (1) JPH1140887A (enExample)
KR (1) KR19980087300A (enExample)
DE (1) DE69833514T2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR20010000545A (ko) * 2000-10-05 2001-01-05 유태경 펌핑 층이 집적된 다 파장 ＡｌＧａＩｎＮ계 반도체ＬＥＤ 소자 및 그 제조 방법
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US6605832B2 (en) * 2001-07-31 2003-08-12 Xerox Corporation Semiconductor structures having reduced contact resistance
EP1302791A1 (en) * 2001-09-27 2003-04-16 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
TWI238549B (en) * 2003-08-21 2005-08-21 Toyoda Gosei Kk Light-emitting semiconductor device and a method of manufacturing it
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
DE102018120490A1 (de) * 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US20230288540A1 (en) * 2022-03-08 2023-09-14 Allegro Microsystems, Llc Detector having quantum dot pn junction photodiode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024569A (en) * 1975-01-08 1977-05-17 Rca Corporation Semiconductor ohmic contact
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
JPH0637355A (ja) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Ｉｉｉ−ｖ族合金半導体およびその製造方法
FR2696278B1 (fr) * 1992-09-25 1994-11-18 Thomson Csf Dispositif comprenant des moyens d'injection de porteurs électroniques dans des matériaux à grand gap.
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JPH07283167A (ja) * 1994-04-12 1995-10-27 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極材料
JP3605907B2 (ja) * 1994-10-28 2004-12-22 三菱化学株式会社 コンタクト抵抗低減層を有する半導体装置
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Similar Documents

Publication Publication Date Title
JPH1140887A5 (enExample)
US7345323B2 (en) Formation of Ohmic contacts in III-nitride light emitting devices
US4688068A (en) Quantum well multijunction photovoltaic cell
US8823049B2 (en) Light-emitting diode with current-spreading region
JPH1056201A5 (enExample)
JP5150802B2 (ja) 窒化物基半導体デバイスのための低ドープ層
KR100615122B1 (ko) 반도체 발광소자
US6287946B1 (en) Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
JP2000133883A5 (enExample)
US5652437A (en) Semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer
US5670796A (en) Semiconductor device consisting of a semiconductor material having a deep impurity level
KR20030036032A (ko) 3 내지 5족 화합물 반도체 및 반도체 장치
US4794444A (en) Ohmic contact and method for making same
US4757369A (en) Group III-V semiconductor electrical contact
US6222205B1 (en) Layered semiconductor structure for lateral current spreading, and light emitting diode including such a current spreading structure
US5932899A (en) Semiconductor having enhanced acceptor activation
JP3174135B2 (ja) 化合物半導体装置
US5162891A (en) Group III-V heterostructure devices having self-aligned graded contact diffusion regions and method for fabricating same
US5158896A (en) Method for fabricating group III-V heterostructure devices having self-aligned graded contact diffusion regions
US6787882B2 (en) Semiconductor varactor diode with doped heterojunction
JPH098285A (ja) ヘテロ接合半導体デバイス
KR101734091B1 (ko) 수평형 발광 다이오드용 투명전극 및 이를 이용한 발광다이오드
US20050179046A1 (en) P-type electrodes in gallium nitride-based light-emitting devices
JP3723314B2 (ja) 半導体発光素子
JPH0567056B2 (enExample)