JPH1056201A5 - - Google Patents

Info

Publication number
JPH1056201A5
JPH1056201A5 JP1997103288A JP10328897A JPH1056201A5 JP H1056201 A5 JPH1056201 A5 JP H1056201A5 JP 1997103288 A JP1997103288 A JP 1997103288A JP 10328897 A JP10328897 A JP 10328897A JP H1056201 A5 JPH1056201 A5 JP H1056201A5
Authority
JP
Japan
Prior art keywords
region
semiconductor material
conductivity type
compound semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997103288A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1056201A (ja
JP3901792B2 (ja
Filing date
Publication date
Priority claimed from US08/635,838 external-priority patent/US5892787A/en
Application filed filed Critical
Publication of JPH1056201A publication Critical patent/JPH1056201A/ja
Publication of JPH1056201A5 publication Critical patent/JPH1056201A5/ja
Application granted granted Critical
Publication of JP3901792B2 publication Critical patent/JP3901792B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP10328897A 1996-04-22 1997-04-21 基板構造、発光装置、基板構造の製造方法および発光装置の製造方法 Expired - Fee Related JP3901792B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/635,838 US5892787A (en) 1994-10-27 1996-04-22 N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same
US635,838 1996-04-22

Publications (3)

Publication Number Publication Date
JPH1056201A JPH1056201A (ja) 1998-02-24
JPH1056201A5 true JPH1056201A5 (enExample) 2005-03-17
JP3901792B2 JP3901792B2 (ja) 2007-04-04

Family

ID=24549316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10328897A Expired - Fee Related JP3901792B2 (ja) 1996-04-22 1997-04-21 基板構造、発光装置、基板構造の製造方法および発光装置の製造方法

Country Status (3)

Country Link
US (1) US5892787A (enExample)
EP (1) EP0803948A3 (enExample)
JP (1) JP3901792B2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6760357B1 (en) * 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
DE10057698A1 (de) 2000-11-21 2002-06-06 Osram Opto Semiconductors Gmbh Übereinander gestapelte Halbleiter-Diodenlaser
US6905900B1 (en) * 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
JP4500516B2 (ja) * 2002-12-13 2010-07-14 三菱電機株式会社 半導体レーザ素子およびその製造方法
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US20040247250A1 (en) * 2003-06-03 2004-12-09 Honeywell International Inc. Integrated sleeve pluggable package
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US6961489B2 (en) 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US7149383B2 (en) 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US7372886B2 (en) * 2004-06-07 2008-05-13 Avago Technologies Fiber Ip Pte Ltd High thermal conductivity vertical cavity surface emitting laser (VCSEL)
KR100787939B1 (ko) 2005-10-08 2007-12-24 삼성전자주식회사 발광 소자용 구조체 및 이를 이용한 발광 소자의 제조 방법
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
FR3005785B1 (fr) 2013-05-14 2016-11-25 Aledia Dispositif optoelectronique et son procede de fabrication
FR3005784B1 (fr) * 2013-05-14 2016-10-07 Aledia Dispositif optoelectronique et son procede de fabrication
JP2016085968A (ja) 2014-10-24 2016-05-19 株式会社半導体エネルギー研究所 発光素子、発光装置、電子機器、及び照明装置
CN111162446A (zh) * 2019-12-27 2020-05-15 山东大学 一种电泵浦钙钛矿激光器
CN113659438A (zh) * 2021-07-30 2021-11-16 西安理工大学 一种具有低n面串联接触电阻的半导体激光器
US12046876B2 (en) * 2021-09-27 2024-07-23 Lumentum Operations Llc Vertically offset vertical cavity surface emitting lasers
US11870217B2 (en) 2021-09-27 2024-01-09 Lumentum Operations Llc Bi-directional vertical cavity surface emitting lasers
GB2621391B (en) * 2022-08-11 2025-05-28 Iqe Plc Layered structure

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JPS62291192A (ja) * 1986-06-11 1987-12-17 Matsushita Electric Ind Co Ltd 面発光レ−ザ
IT1218200B (it) * 1988-03-29 1990-04-12 Sgs Thomson Microelectronics Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
US5263041A (en) * 1992-03-27 1993-11-16 The University Of Colorado Foundation, Inc. Surface emitting semiconductor laser
JPH0690063A (ja) * 1992-07-20 1994-03-29 Toyota Motor Corp 半導体レーザー
US5338944A (en) * 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5892784A (en) * 1994-10-27 1999-04-06 Hewlett-Packard Company N-drive p-common surface emitting laser fabricated on n+ substrate

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