DE69833514T2 - Elektrischer Kontakt für Gallium (Aluminium, Indium)-Nitrid mit niedrigem Spannungsabfall - Google Patents

Elektrischer Kontakt für Gallium (Aluminium, Indium)-Nitrid mit niedrigem Spannungsabfall Download PDF

Info

Publication number
DE69833514T2
DE69833514T2 DE69833514T DE69833514T DE69833514T2 DE 69833514 T2 DE69833514 T2 DE 69833514T2 DE 69833514 T DE69833514 T DE 69833514T DE 69833514 T DE69833514 T DE 69833514T DE 69833514 T2 DE69833514 T2 DE 69833514T2
Authority
DE
Germany
Prior art keywords
layer
gallium nitride
iii
intermediate layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69833514T
Other languages
German (de)
English (en)
Other versions
DE69833514D1 (de
Inventor
Yong Mountain View Chen
Long Union City Yang
Shih-Yuan Palo Alto Wang
Richard P. Mountain View Schneider
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumileds LLC
Original Assignee
Lumileds LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds LLC filed Critical Lumileds LLC
Publication of DE69833514D1 publication Critical patent/DE69833514D1/de
Application granted granted Critical
Publication of DE69833514T2 publication Critical patent/DE69833514T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
DE69833514T 1997-05-23 1998-03-24 Elektrischer Kontakt für Gallium (Aluminium, Indium)-Nitrid mit niedrigem Spannungsabfall Expired - Fee Related DE69833514T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/862,461 US6100586A (en) 1997-05-23 1997-05-23 Low voltage-drop electrical contact for gallium (aluminum, indium) nitride
US862461 1997-05-23

Publications (2)

Publication Number Publication Date
DE69833514D1 DE69833514D1 (de) 2006-04-27
DE69833514T2 true DE69833514T2 (de) 2006-10-05

Family

ID=25338547

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69833514T Expired - Fee Related DE69833514T2 (de) 1997-05-23 1998-03-24 Elektrischer Kontakt für Gallium (Aluminium, Indium)-Nitrid mit niedrigem Spannungsabfall

Country Status (5)

Country Link
US (1) US6100586A (enExample)
EP (1) EP0880181B1 (enExample)
JP (1) JPH1140887A (enExample)
KR (1) KR19980087300A (enExample)
DE (1) DE69833514T2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018120490A1 (de) * 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
DE60043536D1 (de) 1999-03-04 2010-01-28 Nichia Corp Nitridhalbleiterlaserelement
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
KR20010000545A (ko) * 2000-10-05 2001-01-05 유태경 펌핑 층이 집적된 다 파장 ＡｌＧａＩｎＮ계 반도체ＬＥＤ 소자 및 그 제조 방법
US6649942B2 (en) * 2001-05-23 2003-11-18 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
US6605832B2 (en) * 2001-07-31 2003-08-12 Xerox Corporation Semiconductor structures having reduced contact resistance
EP1302791A1 (en) * 2001-09-27 2003-04-16 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg Reflector comprising a GaP layer, and a semiconductor resonant cavity device comprising such a DBR
EP1298461A1 (en) * 2001-09-27 2003-04-02 Interuniversitair Microelektronica Centrum Vzw Distributed Bragg reflector comprising GaP and a semiconductor resonant cavity device comprising such DBR
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
TWI238549B (en) * 2003-08-21 2005-08-21 Toyoda Gosei Kk Light-emitting semiconductor device and a method of manufacturing it
US7119372B2 (en) * 2003-10-24 2006-10-10 Gelcore, Llc Flip-chip light emitting diode
US7009215B2 (en) * 2003-10-24 2006-03-07 General Electric Company Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
JP2006114886A (ja) * 2004-09-14 2006-04-27 Showa Denko Kk ｎ型ＩＩＩ族窒化物半導体積層構造体
US7501295B2 (en) * 2006-05-25 2009-03-10 Philips Lumileds Lighting Company, Llc Method of fabricating a reflective electrode for a semiconductor light emitting device
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
DE102009034359A1 (de) * 2009-07-17 2011-02-17 Forschungsverbund Berlin E.V. P-Kontakt und Leuchtdiode für den ultravioletten Spektralbereich
US20230288540A1 (en) * 2022-03-08 2023-09-14 Allegro Microsystems, Llc Detector having quantum dot pn junction photodiode

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4024569A (en) * 1975-01-08 1977-05-17 Rca Corporation Semiconductor ohmic contact
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
JPH0637355A (ja) * 1992-07-20 1994-02-10 Nippon Telegr & Teleph Corp <Ntt> Ｉｉｉ−ｖ族合金半導体およびその製造方法
FR2696278B1 (fr) * 1992-09-25 1994-11-18 Thomson Csf Dispositif comprenant des moyens d'injection de porteurs électroniques dans des matériaux à grand gap.
DE69425186T3 (de) * 1993-04-28 2005-04-14 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung
JPH07283167A (ja) * 1994-04-12 1995-10-27 Sumitomo Chem Co Ltd ３−５族化合物半導体用電極材料
JP3605907B2 (ja) * 1994-10-28 2004-12-22 三菱化学株式会社 コンタクト抵抗低減層を有する半導体装置
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018120490A1 (de) * 2018-08-22 2020-02-27 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit einer halbleiterkontaktschicht und verfahren zur herstellung des optoelektronischen halbleiterbauelements
US11764330B2 (en) 2018-08-22 2023-09-19 Osram Oled Gmbh Optoelectronic semiconductor component having a semiconductor contact layer and method for producing the optoelectronic semiconductor component

Also Published As

Publication number Publication date
DE69833514D1 (de) 2006-04-27
EP0880181B1 (en) 2006-02-22
KR19980087300A (ko) 1998-12-05
US6100586A (en) 2000-08-08
EP0880181A2 (en) 1998-11-25
EP0880181A3 (en) 1999-01-20
JPH1140887A (ja) 1999-02-12

Similar Documents

Publication Publication Date Title
DE69833514T2 (de) Elektrischer Kontakt für Gallium (Aluminium, Indium)-Nitrid mit niedrigem Spannungsabfall
DE69017396T2 (de) Lichtemittierende Diode mit einer elektrisch leitenden Fensterschicht.
EP2212931B1 (de) Led mit stromaufweitungsschicht
EP2208240B1 (de) Optoelektronischer halbleiterchip mit einer mehrfachquantentopfstruktur
DE69411364T2 (de) Halbleiterlaser
DE19830838B4 (de) Halbleiterlichtemissionseinrichtung
EP2245667A1 (de) Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
EP1709694B1 (de) Dünnfilm-led mit einer stromaufweitungsstruktur
EP3206238B1 (de) Lichtemittierende dünnfilm-diode mit einer spiegelschicht und verfahren zu deren herstellung
DE10048196A1 (de) Verbindungshalbleiter-Bauteil und Verfahren zum Herstellen desselben
DE69506043T2 (de) Lichtemittierende Halbleitervorrichtung
WO2018050466A1 (de) Halbleiterschichtenfolge
EP2047527A1 (de) Led-halbleiterkörper
EP0861505B1 (de) Optoelektronisches bauelement in ii-vi-halbleitermaterial
DE69023813T2 (de) Optisches System unter Verwendung eines Halbleiterlasers mit abstimmbarer Wellenlänge.
DE60311422T2 (de) Halbleiterlaserdiodenvorrichtung
DE102008016525A1 (de) Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102009037416B4 (de) Elektrisch gepumpter optoelektronischer Halbleiterchip
DE19954242B4 (de) Lichtemittierende Vorrichtung aus einem Nitridhalbleiter der Gruppe III
DE102018117018A1 (de) Optoelektronisches halbleiterbauelement mit einer silberhaltigen stromaufweitungsstruktur und optoelektronische vorrichtung
EP3918679A1 (de) Vorrichtung zur erzeugung von laserstrahlung
DE69505341T2 (de) HALBLEITER-HETEROSTRUKTUR, DIE EINE II-VI-VERBINDUNG ENTHÄLT, IN OHMSCHEM KONTAKT MIT EINEM p-GaAs SUBSTRAT
DE19808446C2 (de) Halbleiter-Lichtemissionselement mit Stromdiffusionsschicht und Verfahren zum Herstellen desselben
DE10056475B4 (de) Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis mit verbesserter p-Leitfähigkeit und Verfahren zu dessen Herstellung
EP0917736A1 (de) Led-array in matrixanordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee