JP2002343228A5 - - Google Patents
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- Publication number
- JP2002343228A5 JP2002343228A5 JP2002125567A JP2002125567A JP2002343228A5 JP 2002343228 A5 JP2002343228 A5 JP 2002343228A5 JP 2002125567 A JP2002125567 A JP 2002125567A JP 2002125567 A JP2002125567 A JP 2002125567A JP 2002343228 A5 JP2002343228 A5 JP 2002343228A5
- Authority
- JP
- Japan
- Prior art keywords
- porous
- electron emitter
- high emission
- emission rate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 7
- 239000000463 material Substances 0.000 claims 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 7
- 229920005591 polysilicon Polymers 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 7
- 239000010703 silicon Substances 0.000 claims 7
- 229910021426 porous silicon Inorganic materials 0.000 claims 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 229910052737 gold Inorganic materials 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000002210 silicon-based material Substances 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- 239000002019 doping agent Substances 0.000 claims 3
- 238000002347 injection Methods 0.000 claims 3
- 239000007924 injection Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 2
- 229910001260 Pt alloy Inorganic materials 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000003353 gold alloy Substances 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910001080 W alloy Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910021339 platinum silicide Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910021341 titanium silicide Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/845845 | 2001-04-30 | ||
| US09/845,845 US6771010B2 (en) | 2001-04-30 | 2001-04-30 | Silicon emitter with low porosity heavily doped contact layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002343228A JP2002343228A (ja) | 2002-11-29 |
| JP2002343228A5 true JP2002343228A5 (enExample) | 2005-09-29 |
Family
ID=25296214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002125567A Pending JP2002343228A (ja) | 2001-04-30 | 2002-04-26 | 低多孔率で高濃度にドープされた接触層を有するシリコン製エミッター |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6771010B2 (enExample) |
| EP (1) | EP1255272A3 (enExample) |
| JP (1) | JP2002343228A (enExample) |
| CN (1) | CN1384520A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1576637A2 (en) * | 2002-12-27 | 2005-09-21 | Matsushita Electric Works, Ltd. | Field emission-type electron source and method of producing the same |
| KR100935934B1 (ko) * | 2003-03-15 | 2010-01-11 | 삼성전자주식회사 | 전자빔 리소그라피 시스템의 에미터 및 그 제조방법 |
| WO2005087983A2 (en) * | 2004-03-05 | 2005-09-22 | University Of North Carolina At Charlotte | Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| EP1951924A4 (en) * | 2005-11-07 | 2011-01-05 | Micropyretics Heaters Int | MATERIALS WITH INCREASED EMISSIONS AND MANUFACTURING METHOD THEREFOR |
| CN102651298A (zh) * | 2011-02-23 | 2012-08-29 | 中国科学院微电子研究所 | 红外探成像装置及其制备方法 |
| US20150050816A1 (en) * | 2013-08-19 | 2015-02-19 | Korea Atomic Energy Research Institute | Method of electrochemically preparing silicon film |
| JP6685341B2 (ja) * | 2018-03-30 | 2020-04-22 | シャープ株式会社 | 電子放出素子およびその製造方法 |
| CN110611051B (zh) | 2018-06-15 | 2024-07-16 | 京东方科技集团股份有限公司 | 电子装置的制备方法、电子装置及其制备工具 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4007474A (en) * | 1972-12-29 | 1977-02-08 | Sony Corporation | Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion |
| US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
| US5296388A (en) * | 1990-07-13 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Fabrication method for semiconductor devices |
| US5580808A (en) * | 1992-07-30 | 1996-12-03 | Canon Kabushiki Kaisha | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
| US6187604B1 (en) | 1994-09-16 | 2001-02-13 | Micron Technology, Inc. | Method of making field emitters using porous silicon |
| US5556530A (en) | 1995-06-05 | 1996-09-17 | Walter J. Finklestein | Flat panel display having improved electrode array |
| EP0755068B1 (en) | 1995-07-21 | 2003-06-04 | Canon Kabushiki Kaisha | Semiconductor substrate and process for production thereof |
| KR100239688B1 (ko) | 1995-11-20 | 2000-01-15 | 김영환 | 필드 에미션 디스플레이(fed)의 마이크로팁 제조방법 |
| JP3281533B2 (ja) | 1996-03-26 | 2002-05-13 | パイオニア株式会社 | 冷電子放出表示装置及び半導体冷電子放出素子 |
| US5990605A (en) * | 1997-03-25 | 1999-11-23 | Pioneer Electronic Corporation | Electron emission device and display device using the same |
| TW391022B (en) | 1997-10-29 | 2000-05-21 | Mitsubishi Rayon Co | Field emission electron source, method of producing the same, and use of the same |
| US6794805B1 (en) | 1998-05-26 | 2004-09-21 | Matsushita Electric Works, Ltd. | Field emission electron source, method of producing the same, and use of the same |
| TW436837B (en) | 1998-11-16 | 2001-05-28 | Matsushita Electric Works Ltd | Field emission-type electron source and manufacturing method thereof and display using the electron source |
| US6162716A (en) | 1999-03-26 | 2000-12-19 | Taiwan Semiconductor Manufacturing Company | Amorphous silicon gate with mismatched grain-boundary microstructure |
| US6498426B1 (en) | 1999-04-23 | 2002-12-24 | Matsushita Electric Works, Ltd. | Field emission-type electron source and manufacturing method thereof |
| JP3789064B2 (ja) * | 1999-10-27 | 2006-06-21 | パイオニア株式会社 | 電子放出素子 |
-
2001
- 2001-04-30 US US09/845,845 patent/US6771010B2/en not_active Expired - Fee Related
-
2002
- 2002-04-11 EP EP02252584A patent/EP1255272A3/en not_active Withdrawn
- 2002-04-26 JP JP2002125567A patent/JP2002343228A/ja active Pending
- 2002-04-30 CN CN02118885.8A patent/CN1384520A/zh active Pending
-
2003
- 2003-05-15 US US10/439,642 patent/US6939728B2/en not_active Expired - Fee Related
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