JP2003046203A5 - - Google Patents

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Publication number
JP2003046203A5
JP2003046203A5 JP2002156016A JP2002156016A JP2003046203A5 JP 2003046203 A5 JP2003046203 A5 JP 2003046203A5 JP 2002156016 A JP2002156016 A JP 2002156016A JP 2002156016 A JP2002156016 A JP 2002156016A JP 2003046203 A5 JP2003046203 A5 JP 2003046203A5
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JP
Japan
Prior art keywords
nitride semiconductor
growing
type nitride
layer
type
Prior art date
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Pending
Application number
JP2002156016A
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English (en)
Japanese (ja)
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JP2003046203A (ja
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Priority to JP2002156016A priority Critical patent/JP2003046203A/ja
Priority claimed from JP2002156016A external-priority patent/JP2003046203A/ja
Publication of JP2003046203A publication Critical patent/JP2003046203A/ja
Publication of JP2003046203A5 publication Critical patent/JP2003046203A5/ja
Pending legal-status Critical Current

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JP2002156016A 2002-05-29 2002-05-29 窒化物半導体の成長方法 Pending JP2003046203A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002156016A JP2003046203A (ja) 2002-05-29 2002-05-29 窒化物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002156016A JP2003046203A (ja) 2002-05-29 2002-05-29 窒化物半導体の成長方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP30425996A Division JP3424465B2 (ja) 1996-11-15 1996-11-15 窒化物半導体素子及び窒化物半導体の成長方法

Publications (2)

Publication Number Publication Date
JP2003046203A JP2003046203A (ja) 2003-02-14
JP2003046203A5 true JP2003046203A5 (enExample) 2004-11-11

Family

ID=19194851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002156016A Pending JP2003046203A (ja) 2002-05-29 2002-05-29 窒化物半導体の成長方法

Country Status (1)

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JP (1) JP2003046203A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4762202B2 (ja) * 2007-06-28 2011-08-31 株式会社東芝 半導体量子ドット素子、その製造方法、光スイッチ、半導体レーザ、および光検出器
GB2456756A (en) * 2008-01-16 2009-07-29 Sharp Kk AlInGaN Light-Emitting devices
KR100931483B1 (ko) * 2009-03-06 2009-12-11 이정훈 발광소자

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