JP2008528420A5 - - Google Patents

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Publication number
JP2008528420A5
JP2008528420A5 JP2007552409A JP2007552409A JP2008528420A5 JP 2008528420 A5 JP2008528420 A5 JP 2008528420A5 JP 2007552409 A JP2007552409 A JP 2007552409A JP 2007552409 A JP2007552409 A JP 2007552409A JP 2008528420 A5 JP2008528420 A5 JP 2008528420A5
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JP
Japan
Prior art keywords
layer
diamond
grown
gan
type
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JP2007552409A
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English (en)
Japanese (ja)
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JP2008528420A (ja
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Priority claimed from PCT/US2006/002755 external-priority patent/WO2006081348A1/en
Publication of JP2008528420A publication Critical patent/JP2008528420A/ja
Publication of JP2008528420A5 publication Critical patent/JP2008528420A5/ja
Withdrawn legal-status Critical Current

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JP2007552409A 2005-01-26 2006-01-26 ダイヤモンド上の窒化ガリウム発光デバイス Withdrawn JP2008528420A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64721005P 2005-01-26 2005-01-26
PCT/US2006/002755 WO2006081348A1 (en) 2005-01-26 2006-01-26 Gallium nitride light emitting devices on diamond

Publications (2)

Publication Number Publication Date
JP2008528420A JP2008528420A (ja) 2008-07-31
JP2008528420A5 true JP2008528420A5 (enExample) 2009-03-12

Family

ID=36498791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007552409A Withdrawn JP2008528420A (ja) 2005-01-26 2006-01-26 ダイヤモンド上の窒化ガリウム発光デバイス

Country Status (5)

Country Link
US (2) US8129733B2 (enExample)
EP (1) EP1851369A1 (enExample)
JP (1) JP2008528420A (enExample)
CN (1) CN101155949A (enExample)
WO (1) WO2006081348A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050181210A1 (en) * 2004-02-13 2005-08-18 Doering Patrick J. Diamond structure separation
CN101155949A (zh) 2005-01-26 2008-04-02 阿波罗钻石公司 金刚石上的氮化镓发光装置
US8674405B1 (en) * 2005-04-13 2014-03-18 Element Six Technologies Us Corporation Gallium—nitride-on-diamond wafers and devices, and methods of manufacture
TW200826322A (en) * 2006-12-15 2008-06-16 Kinik Co LED and manufacture method thereof
WO2009033076A1 (en) * 2007-09-05 2009-03-12 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
TWI392117B (zh) * 2008-10-08 2013-04-01 Kinik Co 具有鑽石薄膜之發光二極體及其製造方法
US8183086B2 (en) * 2009-06-16 2012-05-22 Chien-Min Sung Diamond GaN devices and associated methods
JP2013060344A (ja) * 2011-09-14 2013-04-04 Ricoh Co Ltd 窒化ガリウム結晶、１３族窒化物結晶の製造方法および１３族窒化物結晶基板
JP6098028B2 (ja) * 2011-09-14 2017-03-22 株式会社リコー 窒化ガリウム結晶、１３族窒化物結晶、１３族窒化物結晶基板および製造方法
TWI552379B (zh) * 2012-06-28 2016-10-01 國立成功大學 發光二極體及其製造方法
US20150279945A1 (en) * 2012-10-26 2015-10-01 Daniel Francis Semiconductor devices with improved reliability and operating life and methods of manufactuirng the same
GB201301560D0 (en) 2013-01-29 2013-03-13 Element Six Ltd Synthetic Diamond Heat Spreaders
GB2510468B (en) * 2012-12-18 2016-06-08 Element Six Ltd Substrates for semiconductor devices
WO2014124486A1 (en) * 2013-02-13 2014-08-21 Meaglow Ltd Light emitting device using super-luminescence in semiconductor layer grown with moss-burstein effect
CN103779193A (zh) * 2014-01-27 2014-05-07 苏州能讯高能半导体有限公司 基于金刚石衬底的氮化物半导体器件及其制备方法
JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
US9876102B2 (en) 2015-07-17 2018-01-23 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple carrier channels
US9583607B2 (en) 2015-07-17 2017-02-28 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple-functional barrier layer
JP6783063B2 (ja) * 2016-03-17 2020-11-11 株式会社サイオクス 窒化物半導体テンプレートおよび窒化物半導体積層物
CN105826434B (zh) * 2016-03-23 2018-05-01 陕西科技大学 一种金刚石热沉GaN基LED的制作方法
CN108597993B (zh) * 2018-07-05 2024-03-12 西安德盟特半导体科技有限公司 一种氮化镓/金刚石的直接键合方法
CN120956313A (zh) * 2018-09-19 2025-11-14 阿卡什系统公司 用于卫星通信的系统和方法
US12176221B2 (en) 2019-05-31 2024-12-24 Texas State University Incorporating semiconductors on a polycrystalline diamond substrate
JP7389472B2 (ja) * 2019-07-04 2023-11-30 公立大学法人大阪 半導体デバイスの製造方法及び半導体デバイス
JP7556197B2 (ja) * 2020-01-17 2024-09-26 東ソー株式会社 積層膜及びその製造方法
JP7407690B2 (ja) 2020-11-02 2024-01-04 株式会社東芝 電子放出素子及び発電素子
CN113838817A (zh) * 2021-09-29 2021-12-24 太原理工大学 一种金刚石基氮化镓异质结二极管器件的制备方法
WO2023212856A1 (en) * 2022-05-05 2023-11-09 Innoscience (suzhou) Semiconductor Co., Ltd. Semiconductor device and method for manufacturing thereof
CN119517182B (zh) * 2024-10-30 2025-11-18 武汉大学深圳研究院 一种改善金刚石衬底异质外延生长氮化镓的仿真方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373171A (en) * 1987-03-12 1994-12-13 Sumitomo Electric Industries, Ltd. Thin film single crystal substrate
JP2730271B2 (ja) * 1990-03-07 1998-03-25 住友電気工業株式会社 半導体装置
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP3165536B2 (ja) 1992-11-12 2001-05-14 松下電器産業株式会社 半導体ダイヤモンドの形成方法及び装置
DE69521409T2 (de) 1995-03-01 2002-05-16 Sumitomo Electric Industries, Inc. Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung
US5637146A (en) * 1995-03-30 1997-06-10 Saturn Cosmos Co., Ltd. Method for the growth of nitride based semiconductors and its apparatus
JP3481427B2 (ja) 1997-07-03 2003-12-22 古河電気工業株式会社 窒化物半導体の結晶成長方法
US6087274A (en) * 1998-03-03 2000-07-11 The United States Of America As Represented By The Secretary Of The Navy Nanoscale X-Y-Z translation of nanochannel glass replica-based masks for making complex structures during patterning
AU4941900A (en) 1999-05-31 2000-12-18 De Beers Industrial Diamond Division (Proprietary) Limited Doping of crystalline substrates
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
GB0127263D0 (en) * 2001-11-13 2002-01-02 Diamanx Products Ltd Layered structures
US6562127B1 (en) * 2002-01-16 2003-05-13 The United States Of America As Represented By The Secretary Of The Navy Method of making mosaic array of thin semiconductor material of large substrates
TW586246B (en) * 2002-10-28 2004-05-01 Super Nova Optoelectronics Cor Manufacturing method of white light LED and the light-emitting device thereof
WO2006000020A1 (en) 2004-06-29 2006-01-05 European Nickel Plc Improved leaching of base metals
CN101155949A (zh) 2005-01-26 2008-04-02 阿波罗钻石公司 金刚石上的氮化镓发光装置

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