JP2008528420A - ダイヤモンド上の窒化ガリウム発光デバイス - Google Patents

ダイヤモンド上の窒化ガリウム発光デバイス Download PDF

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JP2008528420A
JP2008528420A JP2007552409A JP2007552409A JP2008528420A JP 2008528420 A JP2008528420 A JP 2008528420A JP 2007552409 A JP2007552409 A JP 2007552409A JP 2007552409 A JP2007552409 A JP 2007552409A JP 2008528420 A JP2008528420 A JP 2008528420A
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diamond
layer
semiconductor device
gan
grown
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JP2008528420A5 (enExample
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リネアス，ロバート，シー．
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Apollo Diamond Inc
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Apollo Diamond Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
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    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/18—Controlling or regulating
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    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02455—Group 13/15 materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Chemical & Material Sciences (AREA)
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  • General Physics & Mathematics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
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  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2007552409A 2005-01-26 2006-01-26 ダイヤモンド上の窒化ガリウム発光デバイス Withdrawn JP2008528420A (ja)

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Application Number Priority Date Filing Date Title
US64721005P 2005-01-26 2005-01-26
PCT/US2006/002755 WO2006081348A1 (en) 2005-01-26 2006-01-26 Gallium nitride light emitting devices on diamond

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JP2008528420A true JP2008528420A (ja) 2008-07-31
JP2008528420A5 JP2008528420A5 (enExample) 2009-03-12

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US (2) US8129733B2 (enExample)
EP (1) EP1851369A1 (enExample)
JP (1) JP2008528420A (enExample)
CN (1) CN101155949A (enExample)
WO (1) WO2006081348A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015533774A (ja) * 2012-10-26 2015-11-26 エレメント シックス テクノロジーズ ユーエス コーポレイション 信頼性および動作寿命を改善した半導体デバイスならびにその製造方法
JP2016507450A (ja) * 2012-12-18 2016-03-10 エレメント シックス リミテッド 半導体デバイス用基板
JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2017165624A (ja) * 2016-03-17 2017-09-21 株式会社サイオクス 窒化物半導体テンプレートおよび窒化物半導体積層物
CN108597993A (zh) * 2018-07-05 2018-09-28 西安交通大学 一种氮化镓/金刚石的直接键合方法
JP2021013007A (ja) * 2019-07-04 2021-02-04 公立大学法人大阪 半導体デバイスの製造方法及び半導体デバイス
JP2021113339A (ja) * 2020-01-17 2021-08-05 東ソー株式会社 積層膜及びその製造方法
US11664182B2 (en) 2020-11-02 2023-05-30 Kabushiki Kaisha Toshiba Electron emitting element and power generation element

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CN101155949A (zh) 2005-01-26 2008-04-02 阿波罗钻石公司 金刚石上的氮化镓发光装置
US8674405B1 (en) * 2005-04-13 2014-03-18 Element Six Technologies Us Corporation Gallium—nitride-on-diamond wafers and devices, and methods of manufacture
TW200826322A (en) * 2006-12-15 2008-06-16 Kinik Co LED and manufacture method thereof
US8445383B2 (en) * 2007-09-05 2013-05-21 The United States Of America, As Represented By The Secretary Of The Navy Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices
TWI392117B (zh) * 2008-10-08 2013-04-01 Kinik Co 具有鑽石薄膜之發光二極體及其製造方法
US8183086B2 (en) * 2009-06-16 2012-05-22 Chien-Min Sung Diamond GaN devices and associated methods
JP6098028B2 (ja) 2011-09-14 2017-03-22 株式会社リコー 窒化ガリウム結晶、１３族窒化物結晶、１３族窒化物結晶基板および製造方法
JP2013060344A (ja) * 2011-09-14 2013-04-04 Ricoh Co Ltd 窒化ガリウム結晶、１３族窒化物結晶の製造方法および１３族窒化物結晶基板
TWI552379B (zh) * 2012-06-28 2016-10-01 國立成功大學 發光二極體及其製造方法
GB201301560D0 (en) 2013-01-29 2013-03-13 Element Six Ltd Synthetic Diamond Heat Spreaders
WO2014124486A1 (en) * 2013-02-13 2014-08-21 Meaglow Ltd Light emitting device using super-luminescence in semiconductor layer grown with moss-burstein effect
CN103779193A (zh) * 2014-01-27 2014-05-07 苏州能讯高能半导体有限公司 基于金刚石衬底的氮化物半导体器件及其制备方法
US9583607B2 (en) 2015-07-17 2017-02-28 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple-functional barrier layer
US9876102B2 (en) 2015-07-17 2018-01-23 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple carrier channels
CN105826434B (zh) * 2016-03-23 2018-05-01 陕西科技大学 一种金刚石热沉GaN基LED的制作方法
CN120956313A (zh) * 2018-09-19 2025-11-14 阿卡什系统公司 用于卫星通信的系统和方法
WO2020242494A1 (en) 2019-05-31 2020-12-03 Texas State University Incorporating semiconductors on a polycrystalline diamond substrate
CN113838817A (zh) * 2021-09-29 2021-12-24 太原理工大学 一种金刚石基氮化镓异质结二极管器件的制备方法
CN117941056A (zh) * 2022-05-05 2024-04-26 英诺赛科(苏州)半导体有限公司 半导体器件及其制造方法
CN119517182B (zh) * 2024-10-30 2025-11-18 武汉大学深圳研究院 一种改善金刚石衬底异质外延生长氮化镓的仿真方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015533774A (ja) * 2012-10-26 2015-11-26 エレメント シックス テクノロジーズ ユーエス コーポレイション 信頼性および動作寿命を改善した半導体デバイスならびにその製造方法
JP2016507450A (ja) * 2012-12-18 2016-03-10 エレメント シックス リミテッド 半導体デバイス用基板
JP2017119624A (ja) * 2012-12-18 2017-07-06 アールエフエイチアイシー コーポレイション 半導体デバイス用基板
US10023974B2 (en) 2012-12-18 2018-07-17 Rfhic Corporation Substrates for semiconductor devices
JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
JP2017165624A (ja) * 2016-03-17 2017-09-21 株式会社サイオクス 窒化物半導体テンプレートおよび窒化物半導体積層物
CN108597993A (zh) * 2018-07-05 2018-09-28 西安交通大学 一种氮化镓/金刚石的直接键合方法
CN108597993B (zh) * 2018-07-05 2024-03-12 西安德盟特半导体科技有限公司 一种氮化镓/金刚石的直接键合方法
JP2021013007A (ja) * 2019-07-04 2021-02-04 公立大学法人大阪 半導体デバイスの製造方法及び半導体デバイス
JP7389472B2 (ja) 2019-07-04 2023-11-30 公立大学法人大阪 半導体デバイスの製造方法及び半導体デバイス
JP2021113339A (ja) * 2020-01-17 2021-08-05 東ソー株式会社 積層膜及びその製造方法
JP7556197B2 (ja) 2020-01-17 2024-09-26 東ソー株式会社 積層膜及びその製造方法
US11664182B2 (en) 2020-11-02 2023-05-30 Kabushiki Kaisha Toshiba Electron emitting element and power generation element

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