JP2003046203A - 窒化物半導体の成長方法 - Google Patents

窒化物半導体の成長方法

Info

Publication number
JP2003046203A
JP2003046203A JP2002156016A JP2002156016A JP2003046203A JP 2003046203 A JP2003046203 A JP 2003046203A JP 2002156016 A JP2002156016 A JP 2002156016A JP 2002156016 A JP2002156016 A JP 2002156016A JP 2003046203 A JP2003046203 A JP 2003046203A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
type
growing
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002156016A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003046203A5 (enExample
Inventor
Shinichi Nagahama
慎一 長濱
Shuji Nakamura
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2002156016A priority Critical patent/JP2003046203A/ja
Publication of JP2003046203A publication Critical patent/JP2003046203A/ja
Publication of JP2003046203A5 publication Critical patent/JP2003046203A5/ja
Pending legal-status Critical Current

Links

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2002156016A 2002-05-29 2002-05-29 窒化物半導体の成長方法 Pending JP2003046203A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002156016A JP2003046203A (ja) 2002-05-29 2002-05-29 窒化物半導体の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002156016A JP2003046203A (ja) 2002-05-29 2002-05-29 窒化物半導体の成長方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP30425996A Division JP3424465B2 (ja) 1996-11-15 1996-11-15 窒化物半導体素子及び窒化物半導体の成長方法

Publications (2)

Publication Number Publication Date
JP2003046203A true JP2003046203A (ja) 2003-02-14
JP2003046203A5 JP2003046203A5 (enExample) 2004-11-11

Family

ID=19194851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002156016A Pending JP2003046203A (ja) 2002-05-29 2002-05-29 窒化物半導体の成長方法

Country Status (1)

Country Link
JP (1) JP2003046203A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010168A (ja) * 2007-06-28 2009-01-15 Toshiba Corp 半導体量子ドット素子、その製造方法、光スイッチ、半導体レーザ、および光検出器
JP2009170921A (ja) * 2008-01-16 2009-07-30 Sharp Corp ＡｌＩｎＧａＮ発光デバイス
JP2010212657A (ja) * 2009-03-06 2010-09-24 Chung Hoon Lee 発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009010168A (ja) * 2007-06-28 2009-01-15 Toshiba Corp 半導体量子ドット素子、その製造方法、光スイッチ、半導体レーザ、および光検出器
JP2009170921A (ja) * 2008-01-16 2009-07-30 Sharp Corp ＡｌＩｎＧａＮ発光デバイス
JP2010212657A (ja) * 2009-03-06 2010-09-24 Chung Hoon Lee 発光素子

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