JP2009170921A - AlInGaN発光デバイス - Google Patents
AlInGaN発光デバイス Download PDFInfo
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- JP2009170921A JP2009170921A JP2009007000A JP2009007000A JP2009170921A JP 2009170921 A JP2009170921 A JP 2009170921A JP 2009007000 A JP2009007000 A JP 2009007000A JP 2009007000 A JP2009007000 A JP 2009007000A JP 2009170921 A JP2009170921 A JP 2009170921A
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- 239000002096 quantum dot Substances 0.000 claims abstract description 97
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 57
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 4
- 239000000243 solution Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 228
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 20
- 238000005253 cladding Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000006872 improvement Effects 0.000 description 8
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
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Abstract
【解決手段】(Al,Ga,In)N材料系によって作製された半導体発光デバイスは、InGaN量子ドットまたはInGaN量子細線を含む、発光のための活性領域3を有している。上記活性領域の基板側には、AlGaN層6が設けられている。これによって、上記発光デバイスの光出力が増大する。この光出力の増大は、AlxGa1−xN層が、使用時に、上記活性領域へのキャリア注入を促進する役割を果たすことによると考えられる。
【選択図】図2
Description
Claims (25)
- (Al,Ga,In)N材料系によって作製された半導体発光デバイスであって、発光のための活性領域の基板側に配置されたAlxGa1−xN層を有しており、当該活性領域はInGaN量子ドットまたはInGaN量子細線を含んでおり、上記活性領域と上記AlxGa1−xN層との間の距離は25nm以下である、半導体発光デバイス。
- 上記AlxGa1−xN層の格子定数と上記活性領域の格子定数との差の大きさは3%以下である、請求項1に記載の半導体発光デバイス。
- 上記AlxGa1−xN層は0.05<x<0.2を満たしている、請求項1または2に記載の半導体発光デバイス。
- 上記AlxGa1−xN層はn型ドープされている、請求項1、2、または3に記載の半導体発光デバイス。
- 上記AlxGa1−xN層は意図的にドープされていない、請求項1、2、3、または4に記載の半導体発光デバイス。
- 上記活性領域と上記AlxGa1−xN層との間に配置された(In)GaN層をさらに含んでいる、請求項1〜5の何れか1項に記載の半導体発光デバイス。
- 上記(In)GaN層はGaN層である、請求項6に記載の半導体発光デバイス。
- 上記(In)GaN層は、0≦y<xを満たすInyGa1−yN層である、請求項3を引用する場合の請求項6に記載の半導体発光デバイス。
- 上記(In)GaN層の厚さは1nm以上である、請求項6に記載の半導体発光デバイス。
- 上記(In)GaN層の厚さは2nm以上である、請求項6に記載の半導体発光デバイス。
- 上記(In)GaN層の厚さは25nm以下である、請求項6に記載の半導体発光デバイス。
- 上記(In)GaN層の厚さは10nm以下である、請求項6に記載の半導体発光デバイス。
- 上記活性領域は、InGaN量子ドットまたはInGaN量子細線をそれぞれが含む2つ以上の活性層を含んでおり、隣接し合う活性層の各対の間にはそれぞれキャップ層が設けられている、請求項1〜12の何れか1項に記載の半導体発光デバイス。
- 上記活性領域の非基板側の上に設けられたさらなるキャップ層を含んでいる、請求項13に記載の半導体発光デバイス。
- 上記活性領域は、InGaN量子ドットまたはInGaN量子細線を含む単一の活性層を含んでいる、請求項1〜13の何れか1項に記載の半導体発光デバイス。
- 上記活性領域の非基板側の上に設けられたキャップ層をさらに含んでいる、請求項15に記載の半導体発光デバイス。
- 上記キャップ層(キャップ層が1つしかない場合)または各キャップ層(キャップ層が複数存在する場合)は(In)GaN層である、請求項13、14、または16に記載の半導体発光デバイス。
- 上記キャップ層(キャップ層が1つしかない場合)または各キャップ層(キャップ層が複数存在する場合)はGaN層である、請求項17に記載の半導体発光デバイス。
- 上記キャップ層(キャップ層が1つしかない場合)または各キャップ層(キャップ層が複数存在する場合)は0≦y<xを満たすInyGa1−yN層である、請求項17に記載の半導体発光デバイス。
- 基板をさらに含んでいる、請求項1〜19の何れか1項に記載の半導体発光デバイス。
- 上記基板は、GaN基板、サファイア基板、またはシリコン基板である、請求項20に記載の半導体発光デバイス。
- 上記AlxGa1−xN層の厚さは5nmより大きい、請求項1〜21の何れか1項に記載の半導体発光デバイス。
- 上記AlxGa1−xN層の厚さは50nm未満である、請求項1〜22の何れか1項に記載の半導体発光デバイス。
- 発光ダイオードを含んでいる、請求項1〜23の何れか1項に記載の半導体発光デバイス。
- レーザダイオードを含んでいる、請求項1〜23の何れか1項に記載の半導体発光デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0800742A GB2456756A (en) | 2008-01-16 | 2008-01-16 | AlInGaN Light-Emitting devices |
GB0800742.9 | 2008-01-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009170921A true JP2009170921A (ja) | 2009-07-30 |
JP4885987B2 JP4885987B2 (ja) | 2012-02-29 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009007000A Expired - Fee Related JP4885987B2 (ja) | 2008-01-16 | 2009-01-15 | AlInGaN発光デバイス |
Country Status (3)
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---|---|
US (1) | US7858962B2 (ja) |
JP (1) | JP4885987B2 (ja) |
GB (1) | GB2456756A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079767A1 (en) * | 2008-06-04 | 2011-04-07 | Mathieu Xavier Senes | Nitride semiconductor device |
KR101058649B1 (ko) | 2009-08-17 | 2011-08-22 | 한국광기술원 | 투광성 기판을 구비하는 발광다이오드 |
WO2016125435A1 (ja) * | 2015-02-02 | 2016-08-11 | スタンレー電気株式会社 | 量子ドットの製造方法および量子ドット |
JP2018516466A (ja) * | 2015-06-05 | 2018-06-21 | オステンド・テクノロジーズ・インコーポレーテッド | 多重活性層へのキャリア注入を選定した発光構造 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2456756A (en) * | 2008-01-16 | 2009-07-29 | Sharp Kk | AlInGaN Light-Emitting devices |
US7842595B2 (en) * | 2009-03-04 | 2010-11-30 | Alcatel-Lucent Usa Inc. | Fabricating electronic-photonic devices having an active layer with spherical quantum dots |
WO2012030421A1 (en) * | 2010-05-25 | 2012-03-08 | Qd Vision, Inc. | Devices and methods |
JP5197686B2 (ja) * | 2010-07-16 | 2013-05-15 | 株式会社東芝 | 半導体発光素子の製造方法 |
US20120204957A1 (en) * | 2011-02-10 | 2012-08-16 | David Nicholls | METHOD FOR GROWING AlInGaN LAYER |
DE102011118273A1 (de) * | 2011-11-11 | 2013-05-16 | Forschungsverbund Berlin E.V. | Herstellung einer Halbleitereinrichtung mit mindestens einem säulen- oder wandförmigen Halbleiter-Element |
WO2013147946A1 (en) * | 2012-03-30 | 2013-10-03 | The Regents Of The University Of Michigan | Gan-based quantum dot visible laser |
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US10396240B2 (en) | 2015-10-08 | 2019-08-27 | Ostendo Technologies, Inc. | III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same |
JPWO2017081947A1 (ja) * | 2015-11-12 | 2018-08-30 | ソニー株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
US10217953B2 (en) * | 2016-02-18 | 2019-02-26 | Boe Technology Group Co., Ltd. | Quantum dot light-emitting device, fabricating method thereof, and display substrate |
CN105891922B (zh) * | 2016-06-08 | 2018-06-26 | 汕头万顺包装材料股份有限公司 | 量子点膜制品及其制作方法 |
US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
WO2019055271A1 (en) | 2017-09-15 | 2019-03-21 | Glo Ab | OPTICAL EXTENSION IMPROVEMENT OF LIGHT-EMITTING DIODE SUB-PIXELS |
CN108878608A (zh) * | 2018-06-01 | 2018-11-23 | 太原理工大学 | 一种具有应变减少结构的InGaN量子点LED外延结构 |
CN116454179B (zh) * | 2023-06-14 | 2023-08-25 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
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JP2003046203A (ja) * | 2002-05-29 | 2003-02-14 | Nichia Chem Ind Ltd | 窒化物半導体の成長方法 |
JP2007311831A (ja) * | 2007-08-30 | 2007-11-29 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
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JP3282174B2 (ja) * | 1997-01-29 | 2002-05-13 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP3884148B2 (ja) * | 1997-10-21 | 2007-02-21 | 豊田合成株式会社 | 3族窒化物半導体発光素子の製造方法 |
GB2407702A (en) | 2003-10-28 | 2005-05-04 | Sharp Kk | A semiconductor light-emitting device |
JP4920298B2 (ja) | 2005-04-28 | 2012-04-18 | シャープ株式会社 | 半導体発光デバイスおよび半導体デバイスの製造方法 |
GB2456756A (en) * | 2008-01-16 | 2009-07-29 | Sharp Kk | AlInGaN Light-Emitting devices |
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2008
- 2008-01-16 GB GB0800742A patent/GB2456756A/en active Pending
-
2009
- 2009-01-15 JP JP2009007000A patent/JP4885987B2/ja not_active Expired - Fee Related
- 2009-01-15 US US12/354,317 patent/US7858962B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003046203A (ja) * | 2002-05-29 | 2003-02-14 | Nichia Chem Ind Ltd | 窒化物半導体の成長方法 |
JP2007311831A (ja) * | 2007-08-30 | 2007-11-29 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079767A1 (en) * | 2008-06-04 | 2011-04-07 | Mathieu Xavier Senes | Nitride semiconductor device |
KR101058649B1 (ko) | 2009-08-17 | 2011-08-22 | 한국광기술원 | 투광성 기판을 구비하는 발광다이오드 |
WO2016125435A1 (ja) * | 2015-02-02 | 2016-08-11 | スタンレー電気株式会社 | 量子ドットの製造方法および量子ドット |
JP2018516466A (ja) * | 2015-06-05 | 2018-06-21 | オステンド・テクノロジーズ・インコーポレーテッド | 多重活性層へのキャリア注入を選定した発光構造 |
JP2021122059A (ja) * | 2015-06-05 | 2021-08-26 | オステンド・テクノロジーズ・インコーポレーテッド | 多重活性層へのキャリア注入を選定した発光構造 |
US11329191B1 (en) | 2015-06-05 | 2022-05-10 | Ostendo Technologies, Inc. | Light emitting structures with multiple uniformly populated active layers |
US11335829B2 (en) | 2015-06-05 | 2022-05-17 | Ostendo Technologies, Inc. | Multi-color light emitting structures with controllable emission color |
Also Published As
Publication number | Publication date |
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US20090179191A1 (en) | 2009-07-16 |
JP4885987B2 (ja) | 2012-02-29 |
US7858962B2 (en) | 2010-12-28 |
GB0800742D0 (en) | 2008-02-20 |
GB2456756A (en) | 2009-07-29 |
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