JP5221454B2 - 光電素子粗化構造及びその製造工程 - Google Patents
光電素子粗化構造及びその製造工程 Download PDFInfo
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- JP5221454B2 JP5221454B2 JP2009145982A JP2009145982A JP5221454B2 JP 5221454 B2 JP5221454 B2 JP 5221454B2 JP 2009145982 A JP2009145982 A JP 2009145982A JP 2009145982 A JP2009145982 A JP 2009145982A JP 5221454 B2 JP5221454 B2 JP 5221454B2
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- 238000007788 roughening Methods 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 45
- 229910002601 GaN Inorganic materials 0.000 claims description 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 15
- 238000009751 slip forming Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 74
- 239000000758 substrate Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 230000004931 aggregating effect Effects 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
又はパッケージ材料のエポキシ樹脂
より高い屈折係数
を有するため、従来の発光ダイオードは生じた光を完全に外に向けて発射することができず、その効率が制限される。
この方法の欠点は製造が困難なことであり、その表面形状及び形式は均一且つ非常に小さくなければならず、およそ発光ダイオードの光の単一波長の大きさでなければならない。
112 頂部
114 側面
120 複数個のピンホール
130 半導体層
210 第一粗化面
220 第二粗化面
230 光電素子表面
310 島状体アレイ
320 ピンホールアレイ
330 光電素子表面
402 半導体層
404 第一粗化層
406 第二粗化層
410、420 手順
502 半導体層
504 複数個の島状体
506 複数個のピンホール
510、520、530 手順
Claims (5)
- 窒化ガリウム系の材料からなる光電素子粗化構造であって、複数個の島状体と複数個のピンホール(pin holes)を含み、
前記複数個の島状体は、ドープ層の成長により光電素子の半導体層上に形成され、その内、前記島状体のスケールは約0.1〜10μmであり、
前記複数個のピンホールは、低温層の成長により前記複数個の島状体の頂部と側面に形成され、その内、前記ピンホールのスケールは前記光電素子光源の波長の1/8より大きいか等しく、前記ピンホールの直径は約10〜1000nmであり、前記複数個のピンホールの密度は約107〜1011cm−2であることを特徴とする、光電素子粗化構造。 - 窒化ガリウム系の材料からなる光電素子粗化層であって、ドープ層と低温層を含み、
前記ドープ層は、高濃度ドープ(heavily−dope)方式によって前記光電素子の半導体層上にエピタキシャル成長され、その内、前記ドーパントの濃度は1×1020〜9.9×1022cm−3であり、
前記ドープ層の成長により島状体が形成され、
前記低温層は、前記ドープ層のエピタキシャル温度を下げ、前記ドープ層上に持続的に形成され、その内、前記低温層のエピタキシャル温度は500〜950℃であり、
前記低温層の成長によりピンホールが形成されることを特徴とする、光電素子粗化層。 - 窒化ガリウム系の材料からなる光電素子粗化層であって、第一粗化層と第二粗化層を含み、
前記第一粗化層は高濃度ドープ(heavily−dope)方式によって前記光電素子の半導体層上にエピタキシャル成長され、
前記第一粗化層の成長により島状体が形成され、
前記第二粗化層は、前記第一粗化層のエピタキシャル温度を下げて持続的に形成され、その内、前記第二粗化層の粗化スケールは前記光電素子光源の波長の1/8より大きいか等しく、前記第一粗化層と前記第二粗化層の粗化スケール比は1000:1から10:1であり、
前記第二粗化層の成長によりピンホールが形成されることを特徴とする、光電素子粗化層。 - 窒化ガリウム系の材料からなる半導体粗化構造の製造方法であって、
半導体層を提供する手順と、
第一温度でドーパントを高濃度ドープ(heavily−dope)して前記半導体層に複数個の島状体を成長させる手順と、
前記第一温度から第二温度に下げて低温層を成長させることにより複数個のピンホール(pin holes)を形成させる手順を含み、
その内、前記ドーパントの濃度は1×1020〜9.9×1022cm−3であり、前記複数個のピンホールは前記複数個の島状体の頂部と側面に分布し、かつ前記第一温度と第二温度の差は約200〜650℃であることを特徴とする、半導体粗化構造の製造方法。 - 窒化ガリウム系の材料からなる光電素子粗化構造の製造方法であって、
半導体層をエピタキシャル成長させる手順と、
ドーパントを高濃度ドープ(heavily−dope)して前記半導体層に島状体アレイを成長させる手順と、
エピタキシャル温度を下げ、ピンホール(pin hole)の直径が前記光電素子光源の波長の1/8以上であるピンホールアレイを、低温層を成長させることにより形成させる手順を含み、
その内、前記ドーパントの濃度は1×1020〜9.9×1022cm−3であり、前記ピンホールは前記島状体の頂部と側面にランダムに分布し、前記エピタキシャル温度の降温差は約200〜650℃であることを特徴とする、光電素子粗化構造の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097128064A TW201005997A (en) | 2008-07-24 | 2008-07-24 | Rough structure of optoeletronics device and fabrication thereof |
TW097128064 | 2008-07-24 |
Publications (2)
Publication Number | Publication Date |
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JP2010034530A JP2010034530A (ja) | 2010-02-12 |
JP5221454B2 true JP5221454B2 (ja) | 2013-06-26 |
Family
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Family Applications (1)
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JP2009145982A Expired - Fee Related JP5221454B2 (ja) | 2008-07-24 | 2009-06-19 | 光電素子粗化構造及びその製造工程 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100019263A1 (ja) |
JP (1) | JP5221454B2 (ja) |
TW (1) | TW201005997A (ja) |
Cited By (2)
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US9254620B2 (en) | 2006-08-23 | 2016-02-09 | Illinois Tool Works Inc. | High burst zipper assembly for large reclosable packages |
US10287077B2 (en) | 2010-02-26 | 2019-05-14 | Intercontinental Great Brands Llc | Low-tack, UV-cured pressure sensitive adhesive suitable for reclosable packages |
Families Citing this family (19)
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TWI418059B (zh) * | 2010-04-13 | 2013-12-01 | Univ Nat Taiwan Ocean | 增加氮化鎵系列發光二極體之發光效率的方法 |
US9337387B2 (en) | 2011-06-15 | 2016-05-10 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
US10319881B2 (en) | 2011-06-15 | 2019-06-11 | Sensor Electronic Technology, Inc. | Device including transparent layer with profiled surface for improved extraction |
US9142741B2 (en) * | 2011-06-15 | 2015-09-22 | Sensor Electronic Technology, Inc. | Emitting device with improved extraction |
US10522714B2 (en) | 2011-06-15 | 2019-12-31 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
US9741899B2 (en) | 2011-06-15 | 2017-08-22 | Sensor Electronic Technology, Inc. | Device with inverted large scale light extraction structures |
CN102255009A (zh) * | 2011-06-23 | 2011-11-23 | 映瑞光电科技(上海)有限公司 | Led芯片的制造方法 |
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US8853668B2 (en) | 2011-09-29 | 2014-10-07 | Kabushiki Kaisha Toshiba | Light emitting regions for use with light emitting devices |
US8698163B2 (en) | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
US8664679B2 (en) | 2011-09-29 | 2014-03-04 | Toshiba Techno Center Inc. | Light emitting devices having light coupling layers with recessed electrodes |
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US9178114B2 (en) | 2011-09-29 | 2015-11-03 | Manutius Ip, Inc. | P-type doping layers for use with light emitting devices |
TWI447955B (zh) | 2011-11-23 | 2014-08-01 | Ind Tech Res Inst | 發光二極體元件、其導光結構的形成方法與形成設備 |
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2008
- 2008-07-24 TW TW097128064A patent/TW201005997A/zh unknown
-
2009
- 2009-06-19 JP JP2009145982A patent/JP5221454B2/ja not_active Expired - Fee Related
- 2009-07-20 US US12/505,711 patent/US20100019263A1/en not_active Abandoned
Cited By (2)
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US9254620B2 (en) | 2006-08-23 | 2016-02-09 | Illinois Tool Works Inc. | High burst zipper assembly for large reclosable packages |
US10287077B2 (en) | 2010-02-26 | 2019-05-14 | Intercontinental Great Brands Llc | Low-tack, UV-cured pressure sensitive adhesive suitable for reclosable packages |
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