CN115084331A - 一种用于制造红光Micro-LED的氮化物薄膜结构 - Google Patents

一种用于制造红光Micro-LED的氮化物薄膜结构 Download PDF

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CN115084331A
CN115084331A CN202210354691.XA CN202210354691A CN115084331A CN 115084331 A CN115084331 A CN 115084331A CN 202210354691 A CN202210354691 A CN 202210354691A CN 115084331 A CN115084331 A CN 115084331A
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nitride thin
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高江东
樊琦
张建立
王小兰
郑畅达
王立
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Nanchang Guiji Semiconductor Technology Co ltd
Nanchang University
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Nanchang University
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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    • H—ELECTRICITY
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

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Abstract

本发明公开了一种用于制造红光Micro‑LED的氮化物薄膜结构，晶圆作为制造该氮化物薄膜结构的衬底，且晶圆的表面法向与表面晶向之间的夹角为1.0至3.0°，薄膜表面及内部含有台阶形状的层堆叠，所述层堆叠包括：掺Si层、发光量子阱层和掺Mg层。所述台阶形状是由自然生长得到，大小不一、形状不规则，分布均匀，单个台阶由台阶平台和台阶侧壁构成，台阶平台和台阶侧壁之间具有一定夹角，其夹角在90°±10°之间。本发明的优点是：（1）用该氮化物薄膜制备的红光Micro‑LED在工作时具有较低的工作电压；（2）用该氮化物薄膜制备的红光Micro‑LED在工作时，侧表面及其附近的非辐射复合较少，电‑光转换的量子效率较高；（3）用该氮化物薄膜制备的红光Micro‑LED在薄膜面内不同位置上均具有稳定的性能。

Description

一种用于制造红光Micro-LED的氮化物薄膜结构
技术领域
本发明涉及氮化物发光二极管（Light Emitting Diode，LED）制造领域，尤其涉及一种用于制造红光Micro-LED的氮化物薄膜结构。
背景技术
在制造像素线密度超过每英寸2000个像素的Micro-LED全彩显示器时，需要芯片边长仅为数个微米的红光Micro-LED（矩形芯片）。但是目前在公知的红光Micro-LED制造技术中，制备高光效且边长仅为数个微米的红光Micro-LED仍存在很多困难。这主要是因为随着边长的减小，红光Micro-LED的侧表面占总表面积的比例增加，导致表面及附近的非辐射复合强度相对增加，从而导致光效较低。例如，采用传统AlGaInP材料制备边长数个微米的红光Micro-LED光效最高值不超过0.1%，这主要是AlGaInP材料中表面复合系数较大所致。采用表面复合系数较小的氮化物材料可缓解上述问题，但目前相同尺寸下的氮化物红光Micro-LED光效最高值仍然较低。因此，如何继续减小这种表面非辐射复合，是提高该芯片尺寸下红光Micro-LED性能的关键。通常采取的办法是在芯片工艺层面上，通过对芯片的侧表面进行化学处理或镀膜使侧表面的非饱和键被充分钝化，以减弱侧表面缺陷态捕获载流子的能力，从而减少侧表面及其附近区域的非辐射复合。这种方法的缺点是即使进行充分的处理，也无法大幅提高氮化物红光Micro-LED的光效。因此，想要继续提高氮化物红光Micro-LED的光效需要另辟蹊径。
发明内容
本发明的目的在于提供一种提高氮化物红光Micro-LED的发光效率、生产效率与产品良率的用于制造红光Micro-LED的氮化物薄膜结构。
本发明的目的是这样实现的：
一种用于制造红光Micro-LED的氮化物薄膜结构，特征是：晶圆作为制造红光Micro-LED的氮化物薄膜结构的衬底，晶圆的表面法向与表面晶向之间的夹角为1.0至3.0°。
该氮化物薄膜由台阶形状的层堆叠构成，所述层堆叠包括但不限于：掺Si层、发光量子阱层和掺Mg层；所述台阶形状未经刻蚀、化学处理，而是由自然生长得到，层堆叠的大小不一、形状不规则，分布均匀；单个台阶由台阶平台和台阶侧壁构成，台阶平台和台阶侧壁之间具有一定夹角，夹角在90±10°之间。
在该台阶形状的层堆叠中，表面台阶与内部台阶的形状满足以下关系，表面台阶的平均高度大于内部台阶的平均高度。
所述台阶的侧壁高度H在10nm至1.0μm之间,台阶的平台长度L在0.1μm至100μm之间，台阶的宽度d在0.1μm至10.0μm之间；表面台阶的密度，即单位面积内的台阶个数在1.5×105至2×105 cm-2之间。
在该氮化物薄膜中，掺Si层的厚度在0.1至0.9 μm之间，且该氮化物薄膜中掺Mg层的厚度在0.01至0.10 μm之间。
在该氮化物薄膜中，位错密度在1.5 × 109至3 × 109 cm-2之间。
本发明使用满足所规定范围夹角的衬底，能使该氮化物薄膜的表面法向与表面晶向之间也存在夹角，并使该氮化物薄膜的表面及内部InGaN量子阱自然生长得到层状台阶。由于在外延生长过程中，量子阱的厚度不超过3nm，台阶的高度大于单层量子阱的厚度，因此台阶形量子垒的侧壁能使有源区内部的载流子在横向运输过程中受到的阻碍增加。此外，本发明从外延工艺层面上，构造出表面含有层状台阶的氮化物薄膜。该氮化物薄膜由台阶形状的层堆叠构成，所述层堆叠包括但不限于：掺Si层、发光量子阱层和掺Mg层。满足所规定厚度范围内的掺Si层和掺Mg层能减小载流子从电极处输运至侧表面的能力，抑制表面与内部载流子向侧表面方向的输运，这些都能减少使用该氮化物薄膜制备的红光Micro-LED中侧表面及其附近区域的非辐射复合，从而提高氮化物红光Micro-LED的发光效率。满足所规定范围内的位错密度，有助于在该氮化物薄膜不同区域内制作的红光Micro-LED具有较均匀的位错分布，以及较均匀的发光层In组分，可提高红光Micro-LED的生产效率与产品良率。
本发明的优点是：
（1）用该氮化物薄膜制备的红光Micro-LED在工作时具有较低的工作电压；
（2）用该氮化物薄膜制备的红光Micro-LED在工作时，侧表面及其附近的非辐射复合较少，电-光转换的量子效率较高；
（3）用该氮化物薄膜制备的红光Micro-LED在薄膜面内不同位置上均具有稳定的性能。
附图说明
图1是本发明中制造氮化物薄膜的衬底示意图；
图2是本发明中氮化物薄膜的结构示意图；
图3是本发明中单个量子阱的断面结构示意图；
图4是本发明中氮化物薄膜在原子力显微镜下的立体图像；
图5是本发明中氮化物薄膜在荧光显微镜下放大200倍的局部俯视图；
图6是本发明中量子垒侧壁阻碍载流子向侧表面输运的示意图；
图7是本发明中无台阶结构的Micro-LED模拟示意图；
图8是本发明中有台阶结构的Micro-LED模拟示意图；
符号说明：101-Si（111）衬底，102-掺Si的n型氮化物薄层，103-InGaN/GaN多量子阱发光层，104-掺Mg的p型氮化物薄层，110-台阶形状的层堆叠，120-台阶平台，130-台阶侧壁，131-量子垒台阶侧壁，132-量子阱台阶侧壁，133-侧壁损伤层。
具体实施方式
为了便于本领域普通技术人员理解和实施本发明，下面结合附图及实施例对本发明作进一步的详细描述，应当理解，此处所描述的实施示例仅用于说明和解释本发明，并不用于限定本发明。
一种用于制造红光Micro-LED的氮化物薄膜结构，
（1）采用金属有机化学气相沉积（Metal-Organic Chemical Vapor Deposition，MOCVD）设备，使用Si（111）衬底101，其中：Si（111）衬底101的表面法向与表面晶向之间存在1.0至3.0°的夹角，如图1所示。所用原料包括三甲基镓（TMGa）、三乙基镓（TEGa）、三甲基铝（TMAl）、三甲基铟（TMIn）、硅烷（SiH4）、二茂镁（Cp2Mg）、氨气（NH3），并使用N2和H2作为原料输运气体；
（2）在Si（111）衬底101上外延生长出掺Si的n型氮化物薄层102，厚度在0.1至0.9μm之间；
（3）生长InGaN/GaN多量子阱发光层103；
（4）生长掺Mg的p型氮化物薄层104，厚度在0.01至0.10 μm之间；
（5）最终获得本发明所需的氮化物薄膜，氮化物薄膜的结构示意图如图2所示；其中：掺Si的n型氮化物薄层102、InGaN/GaN多量子阱发光层103、掺Mg的p型氮化物薄层104构成了所述的台阶形状的层堆叠110。
图3为本实施例中InGaN/GaN多量子阱发光层的断面示意图，其中，台阶的高度H为单个台阶的最顶端到最底端的垂直距离，台阶的间距d为相邻台阶底端之间的水平距离。
图4为本实施例中获得的氮化物薄膜在原子力显微镜下的立体图像。
图5为本实例中获得的氮化物薄膜在荧光显微镜下放大200倍的局部俯视图，其中每条深色条纹可代表单个台阶，台阶的长度为单个台阶在竖直方向的投影长度，台阶的密度为单位面积内计数得到的台阶个数。
图6为是本发明中量子垒台阶侧壁131阻碍载流子向侧表面输运的示意图。
图7为无台阶结构的Micro-LED数值仿真结构示意图，图8为由台阶结构的Micro-LED数值仿真结构示意图，133为侧壁损伤层。通过Silvaco TCAD数值仿真，发现在台阶形貌的Micro-LED模型中，由于量子垒台阶侧壁131的阻挡作用，载流子聚集在量子阱台阶侧壁132中，避免了被侧壁的缺陷俘获，因此侧壁漏电流大幅减少。。
应当理解的是，上述针对较佳实施例的描述较为详细，并不能因此而认为是对本发明专利保护范围的限制，本领域的普通技术人员在本发明的启示下，在不脱离本发明权利要求所保护的范围情况下，还可以做出替换或变形，均落入本发明的保护范围之内，本发明的请求保护范围应以所附权利要求为准。

Claims (6)

1.一种用于制造红光Micro-LED的氮化物薄膜结构，特征在于：晶圆作为制造红光Micro-LED的氮化物薄膜结构的衬底，晶圆的表面法向与表面晶向之间的夹角为1.0至3.0°。
2.根据权利要求1所述的用于制造红光Micro-LED的氮化物薄膜结构，特征在于：该氮化物薄膜由台阶形状的层堆叠构成，所述层堆叠包括但不限于：掺Si层、发光量子阱层和掺Mg层；所述台阶形状未经刻蚀、化学处理，而是由自然生长得到，层堆叠的大小不一、形状不规则，分布均匀；单个台阶由台阶平台和台阶侧壁构成，台阶平台和台阶侧壁之间具有一定夹角，夹角在90±10°之间。
3.根据权利要求2所述的用于制造红光Micro-LED的氮化物薄膜结构，特征在于：在该台阶形状的层堆叠中，表面台阶与内部台阶的形状满足以下关系，表面台阶的平均高度大于内部台阶的平均高度。
4.根据权利要求2或3所述的用于制造红光Micro-LED的氮化物薄膜结构，特征在于：所述台阶的侧壁高度H在10nm至1.0μm之间,台阶的平台长度L在0.1μm至100μm之间，台阶的宽度d在0.1μm至10.0μm之间；表面台阶的密度，即单位面积内的台阶个数在1.5×105至2×105cm-2之间。
5.根据权利要求2所述的用于制造红光Micro-LED的氮化物薄膜结构，特征在于：在该氮化物薄膜中，掺Si层的厚度在0.1至0.9 μm之间，且该氮化物薄膜中掺Mg层的厚度在0.01至0.10 μm之间。
6.根据权利要求2所述的用于制造红光Micro-LED的氮化物薄膜结构，特征在于：在该氮化物薄膜中，位错密度在1.5×109至3×109 cm-2之间。
CN202210354691.XA 2022-04-06 2022-04-06 一种用于制造红光Micro-LED的氮化物薄膜结构 Pending CN115084331A (zh)

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