JP4147441B2 - 化合物半導体装置 - Google Patents

化合物半導体装置 Download PDF

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Publication number
JP4147441B2
JP4147441B2 JP19547599A JP19547599A JP4147441B2 JP 4147441 B2 JP4147441 B2 JP 4147441B2 JP 19547599 A JP19547599 A JP 19547599A JP 19547599 A JP19547599 A JP 19547599A JP 4147441 B2 JP4147441 B2 JP 4147441B2
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Japan
Prior art keywords
layer
electrode
heat
metal layer
compound semiconductor
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Expired - Fee Related
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JP19547599A
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Japanese (ja)
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JP2001023928A5 (enExample
JP2001023928A (ja
Inventor
憲 澤田
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Fujitsu Ltd
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Fujitsu Ltd
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Priority to JP19547599A priority Critical patent/JP4147441B2/ja
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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP19547599A 1999-07-09 1999-07-09 化合物半導体装置 Expired - Fee Related JP4147441B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19547599A JP4147441B2 (ja) 1999-07-09 1999-07-09 化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19547599A JP4147441B2 (ja) 1999-07-09 1999-07-09 化合物半導体装置

Publications (3)

Publication Number Publication Date
JP2001023928A JP2001023928A (ja) 2001-01-26
JP2001023928A5 JP2001023928A5 (enExample) 2006-08-17
JP4147441B2 true JP4147441B2 (ja) 2008-09-10

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Family Applications (1)

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JP19547599A Expired - Fee Related JP4147441B2 (ja) 1999-07-09 1999-07-09 化合物半導体装置

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JP (1) JP4147441B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6019659B2 (ja) 2012-03-27 2016-11-02 富士通株式会社 無呼吸状態判定装置，無呼吸状態判定方法，及び無呼吸状態判定プログラム
WO2021137931A1 (en) 2020-01-02 2021-07-08 Raytheon Company X-ray shielding deposition method for electron-beam deposited coatings

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Publication number Publication date
JP2001023928A (ja) 2001-01-26

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