JP4141581B2 - フラッシュメモリを搭載する記憶装置 - Google Patents

フラッシュメモリを搭載する記憶装置 Download PDF

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Publication number
JP4141581B2
JP4141581B2 JP09801999A JP9801999A JP4141581B2 JP 4141581 B2 JP4141581 B2 JP 4141581B2 JP 09801999 A JP09801999 A JP 09801999A JP 9801999 A JP9801999 A JP 9801999A JP 4141581 B2 JP4141581 B2 JP 4141581B2
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Japan
Prior art keywords
data
flash memory
external
read
write
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Expired - Fee Related
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JP09801999A
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Japanese (ja)
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JP2000293427A5 (enExample
JP2000293427A (ja
Inventor
知也 福住
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP09801999A priority Critical patent/JP4141581B2/ja
Priority to US09/395,941 priority patent/US6434658B1/en
Publication of JP2000293427A publication Critical patent/JP2000293427A/ja
Publication of JP2000293427A5 publication Critical patent/JP2000293427A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0626—Reducing size or complexity of storage systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0656—Data buffering arrangements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP09801999A 1999-04-05 1999-04-05 フラッシュメモリを搭載する記憶装置 Expired - Fee Related JP4141581B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP09801999A JP4141581B2 (ja) 1999-04-05 1999-04-05 フラッシュメモリを搭載する記憶装置
US09/395,941 US6434658B1 (en) 1999-04-05 1999-09-14 Memory device operable with a small-capacity buffer memory and having a flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09801999A JP4141581B2 (ja) 1999-04-05 1999-04-05 フラッシュメモリを搭載する記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008122579A Division JP4731584B2 (ja) 2008-05-08 2008-05-08 フラッシュメモリを搭載する記憶装置

Publications (3)

Publication Number Publication Date
JP2000293427A JP2000293427A (ja) 2000-10-20
JP2000293427A5 JP2000293427A5 (enExample) 2005-11-04
JP4141581B2 true JP4141581B2 (ja) 2008-08-27

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Family Applications (1)

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JP09801999A Expired - Fee Related JP4141581B2 (ja) 1999-04-05 1999-04-05 フラッシュメモリを搭載する記憶装置

Country Status (2)

Country Link
US (1) US6434658B1 (enExample)
JP (1) JP4141581B2 (enExample)

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JP4711531B2 (ja) * 2001-03-23 2011-06-29 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4082913B2 (ja) * 2002-02-07 2008-04-30 株式会社ルネサステクノロジ メモリシステム
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US7174348B1 (en) * 2002-11-26 2007-02-06 Unisys Corporation Computer program having an object module and a software development tool integration module which automatically interlink artifacts generated in different phases of a software project
US7406628B2 (en) * 2003-07-15 2008-07-29 Seagate Technology Llc Simulated error injection system in target device for testing host system
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
KR100528482B1 (ko) * 2003-12-31 2005-11-15 삼성전자주식회사 데이타를 섹터 단위로 랜덤하게 입출력할 수 있는 플래시메모리 시스템
US7600087B2 (en) * 2004-01-15 2009-10-06 Hitachi, Ltd. Distributed remote copy system
KR100606242B1 (ko) * 2004-01-30 2006-07-31 삼성전자주식회사 불휘발성 메모리와 호스트간에 버퍼링 동작을 수행하는멀티 포트 휘발성 메모리 장치, 이를 이용한 멀티-칩패키지 반도체 장치 및 이를 이용한 데이터 처리장치
JP2005285191A (ja) * 2004-03-29 2005-10-13 Nec Electronics Corp 不揮発性半導体記憶装置及びその駆動方法
JP4713867B2 (ja) * 2004-09-22 2011-06-29 株式会社東芝 メモリコントローラ，メモリ装置及びメモリコントローラの制御方法
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7386655B2 (en) * 2004-12-16 2008-06-10 Sandisk Corporation Non-volatile memory and method with improved indexing for scratch pad and update blocks
US7412560B2 (en) * 2004-12-16 2008-08-12 Sandisk Corporation Non-volatile memory and method with multi-stream updating
US7366826B2 (en) * 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
KR100666169B1 (ko) * 2004-12-17 2007-01-09 삼성전자주식회사 플래쉬 메모리 데이터 저장장치
KR100737913B1 (ko) * 2005-10-04 2007-07-10 삼성전자주식회사 반도체 메모리 장치의 읽기 방법
KR100660553B1 (ko) 2005-10-18 2006-12-22 삼성전자주식회사 데이터 버스트 주파수를 증가시킬 수 있는 원낸드 플래시메모리 장치
US20070100893A1 (en) * 2005-10-31 2007-05-03 Sigmatel, Inc. System and method for accessing data from a memory device
JP4661748B2 (ja) * 2006-09-22 2011-03-30 Ｔｄｋ株式会社 メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びにフラッシュメモリの制御方法
JP2008112285A (ja) * 2006-10-30 2008-05-15 Toshiba Corp 不揮発性メモリシステム
JP4498341B2 (ja) * 2006-11-20 2010-07-07 株式会社東芝 メモリシステム
KR100898653B1 (ko) * 2007-07-25 2009-05-22 주식회사 하이닉스반도체 플래시 메모리 소자 및 프로그램 방법
US9201790B2 (en) * 2007-10-09 2015-12-01 Seagate Technology Llc System and method of matching data rates
US8959307B1 (en) 2007-11-16 2015-02-17 Bitmicro Networks, Inc. Reduced latency memory read transactions in storage devices
US8665601B1 (en) 2009-09-04 2014-03-04 Bitmicro Networks, Inc. Solid state drive with improved enclosure assembly
US9135190B1 (en) 2009-09-04 2015-09-15 Bitmicro Networks, Inc. Multi-profile memory controller for computing devices
US8447908B2 (en) 2009-09-07 2013-05-21 Bitmicro Networks, Inc. Multilevel memory bus system for solid-state mass storage
US8560804B2 (en) 2009-09-14 2013-10-15 Bitmicro Networks, Inc. Reducing erase cycles in an electronic storage device that uses at least one erase-limited memory device
US9372755B1 (en) 2011-10-05 2016-06-21 Bitmicro Networks, Inc. Adaptive power cycle sequences for data recovery
US9043669B1 (en) 2012-05-18 2015-05-26 Bitmicro Networks, Inc. Distributed ECC engine for storage media
KR20140082173A (ko) * 2012-12-24 2014-07-02 에스케이하이닉스 주식회사 어드레스 카운팅 회로 및 이를 이용한 반도체 장치
US9652376B2 (en) * 2013-01-28 2017-05-16 Radian Memory Systems, Inc. Cooperative flash memory control
US9423457B2 (en) 2013-03-14 2016-08-23 Bitmicro Networks, Inc. Self-test solution for delay locked loops
US9400617B2 (en) 2013-03-15 2016-07-26 Bitmicro Networks, Inc. Hardware-assisted DMA transfer with dependency table configured to permit-in parallel-data drain from cache without processor intervention when filled or drained
US10489318B1 (en) 2013-03-15 2019-11-26 Bitmicro Networks, Inc. Scatter-gather approach for parallel data transfer in a mass storage system
US9672178B1 (en) 2013-03-15 2017-06-06 Bitmicro Networks, Inc. Bit-mapped DMA transfer with dependency table configured to monitor status so that a processor is not rendered as a bottleneck in a system
US9916213B1 (en) 2013-03-15 2018-03-13 Bitmicro Networks, Inc. Bus arbitration with routing and failover mechanism
US9501436B1 (en) 2013-03-15 2016-11-22 Bitmicro Networks, Inc. Multi-level message passing descriptor
US9734067B1 (en) 2013-03-15 2017-08-15 Bitmicro Networks, Inc. Write buffering
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US9842024B1 (en) 2013-03-15 2017-12-12 Bitmicro Networks, Inc. Flash electronic disk with RAID controller
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US9858084B2 (en) 2013-03-15 2018-01-02 Bitmicro Networks, Inc. Copying of power-on reset sequencer descriptor from nonvolatile memory to random access memory
US9934045B1 (en) 2013-03-15 2018-04-03 Bitmicro Networks, Inc. Embedded system boot from a storage device
US9798688B1 (en) 2013-03-15 2017-10-24 Bitmicro Networks, Inc. Bus arbitration with routing and failover mechanism
US9875205B1 (en) 2013-03-15 2018-01-23 Bitmicro Networks, Inc. Network of memory systems
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US9811461B1 (en) 2014-04-17 2017-11-07 Bitmicro Networks, Inc. Data storage system
US10055150B1 (en) 2014-04-17 2018-08-21 Bitmicro Networks, Inc. Writing volatile scattered memory metadata to flash device
US9952991B1 (en) 2014-04-17 2018-04-24 Bitmicro Networks, Inc. Systematic method on queuing of descriptors for multiple flash intelligent DMA engine operation
US10078604B1 (en) 2014-04-17 2018-09-18 Bitmicro Networks, Inc. Interrupt coalescing
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US20020083262A1 (en) 2002-06-27
US6434658B1 (en) 2002-08-13
JP2000293427A (ja) 2000-10-20

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