JP4133968B2 - 反射防止ハードマスク組成物とそれを用いた半導体デバイスの製造方法 - Google Patents
反射防止ハードマスク組成物とそれを用いた半導体デバイスの製造方法 Download PDFInfo
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- JP4133968B2 JP4133968B2 JP2004237692A JP2004237692A JP4133968B2 JP 4133968 B2 JP4133968 B2 JP 4133968B2 JP 2004237692 A JP2004237692 A JP 2004237692A JP 2004237692 A JP2004237692 A JP 2004237692A JP 4133968 B2 JP4133968 B2 JP 4133968B2
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Images
Classifications
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/151—Matting or other surface reflectivity altering material
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
前記AHPCSポリマーを、溶剤に対する固形分として、約10wt%から約20wt%の濃度で、2−ヘプタノン溶剤に溶解した。配合Aを、200ミリメートル(mm)のシリコン・ウェハ上に、3000回転/分(rpm)で60秒間、スピン・コーティングし、次に、不活性窒素流の下、200℃で5分間、ホット・プレート焼付けを行い、さらに、不活性窒素流の下、400℃で1時間、炉硬化を行うことにより、約200nmから約400nmの厚さの膜を生成させた。200℃で硬化したカルボシラン・ポリマー膜のラザフォード後方散乱分光(RBS)分析により、次の元素組成が示された:ケイ素 23.9±2原子パーセント;炭素 25.9±3原子パーセント;水素 44.9±2原子パーセント;酸素 5.3±3原子パーセント。400℃で硬化したポリカルボシラン・ポリマー膜のRBS分析により、次の元素組成が示された:ケイ素 22.5±2原子パーセント;炭素 29.7±3原子パーセント;水素 40.0±2原子パーセント;酸素 7.8±3原子パーセント。
ポリカルボメチルシラン・ポリマーを、溶剤に対する固形分として、約10wt%から約20wt%の濃度で、2−ヘプタノン溶剤に溶解した。配合Bを、200mmのシリコン・ウェハ上に、3000rpmで60秒間、スピン・コーティングし、次に、不活性窒素流の下、200℃で5分間、ホット・プレートで加熱処理を行うことにより、約200nmから約400nmの厚さの膜を生成させた。アライドシグナル・エレクトロン・ビジョン・グループ(AlliedSignal Electron Vision Group)によるElectronCureTM−200M装置を用いて暴露することにより、この膜を電子線硬化させた。暴露は、25キロボルト(kV)、2ミリアンペア(mA)で約20分間行われた。放射量は、各ウェハに対して、正確に2000マイクロクーロン/平方センチメートル(μC/cm2)である。この装置での最大放射量は、各回250マイクロクーロン(μC)である。それぞれ250μCで8回、それを暴露した。
DMPCSポリマーを、溶剤に対して20wt%の濃度で、PGMEA溶剤に溶解した。熱酸発生剤であるニトロベンジルブチルトシレートを、ポリマーに対して5wt%の濃度で加えた。この配合物を、200mmのシリコン・ウェハ上に、3000rpmで60秒間、スピン・コーティングし、次に、200℃で2分間、ホット・プレートで焼付けを行うことにより、200nmの厚さの膜を生成させた。
前駆体である、ジメトキシポリカルボシラン(DMPCS)、グリシドキシプロピルトリメトキシシランおよびフェニルトリメトキシシランをそれぞれ、0.45:0.45:0.1のモル比で混合した。この混合物の全量1グラム(g)を、4gのDowanol PM(アルドリッチ・ケミカル社の製品)および1gの1規定(N)塩酸に溶解した。この溶液を1時間攪拌し濾過した。この配合物を、200ミリメートル(mm)のシリコン・ウェハ上に、3000rpmで60秒間、スピン・コーティングし、次に、200℃で2分間、ホット・プレートで焼付けを行うことにより、300nmの厚さの膜を生成させた。シルセスキオキサン/カルボシランのコポリマー膜のRBS分析により、次の元素組成が示された:ケイ素 11.7±2原子パーセント;酸素 19.8±2原子パーセント;炭素 27.2±2原子パーセント;水素 40.1±2原子パーセント;塩素 0.7±0.2原子パーセント。
光学定数(193nmでの屈折率(n)および吸光係数(k))を、n&kテクノロジー社(n&k Technology, Inc.)製のn&k Analyzerを用いて測定する。
実施例1および実施例4に記載の反射防止ハードマスク層をリソグラフィに用いた。硬化した反射防止ハードマスク層上に、住友、JSRの製品であるアクリル系フォトレジスト層を約250nmの厚さにスピン・コートした。放射線感受性画像形成層を130℃で60秒間、焼き付けた。次に、APSMレティクルを用いる、通常の輪帯照明付き0.6NA 193nmニコン・ステッパを用いて、放射線感受性画像形成層に画像を形成した。パターン露光の後、放射線感受性画像形成層を130℃で60秒間、焼き付けた。次に、市販の現像液(0.26M TMAH)を用いて画像を現像した。得られたパターンは113.75nmと122.5nmのラインおよび間隔のパターンを示した。
MeGPPCSを、溶剤に対して固形分として10wt%となるようにPGMEAに溶解した。t−ブチルフェニルジフェニルスルホニウム・パーフルオロブタンスルホナート(TAG)を、ポリマーに対するTAGの組成が2.5wt%であるように加えた。界面活性剤(FC430)を、全質量に対して1,500部/100万部(ppm)となるように加えた。厚さ215nmの膜を、25mmのウェハ上に、3,000rpmで40秒かけてスピン・コートし、110℃で60秒間焼き付けた。光学的性質(193nm):n=1.674、k=0.025。ウェハを220℃で60秒間焼き付けることにより架橋を完了させ、如何なる溶剤にも溶けない膜が得られた。
Claims (3)
- 半導体デバイスの製造方法であって、
基板上に材料層を設ける工程;
前記材料層上に反射防止ハードマスク層を形成する工程;
前記反射防止ハードマスク層上に放射線感受性画像形成層を形成する工程;
前記放射線感受性画像形成層をパターンに従って200ナノメートル以下の波長の紫外線または電子線に曝すことにより、前記画像形成層に放射曝露領域のパターンを作り出す工程;
前記放射線感受性画像形成層および前記反射防止ハードマスク層の一部分を選択的に除去して、前記材料層の一部分を露出させる工程;および
前記材料層の前記露出部分をエッチングすることにより、前記基板上にパターン化材料
形体を形成する工程;
を含み、前記反射防止ハードマスク層は、
少なくとも1種の発色団部分と少なくとも1種の透明部分を含むカルボシラン・ポリマー骨格を有するポリマー;ならびに
架橋成分;
を含む方法。 - 前記反射防止ハードマスク層が酸発生剤をさらに含む請求項1に記載の方法。
- 前記反射防止ハードマスク層の厚さが、0.03マイクロメートルから5マイクロメートルである請求項1に記載の方法。
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US10/646,307 US7172849B2 (en) | 2003-08-22 | 2003-08-22 | Antireflective hardmask and uses thereof |
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JP2005070776A JP2005070776A (ja) | 2005-03-17 |
JP4133968B2 true JP4133968B2 (ja) | 2008-08-13 |
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Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6824879B2 (en) | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
KR100804873B1 (ko) * | 1999-06-10 | 2008-02-20 | 얼라이드시그날 인코퍼레이티드 | 포토리소그래피용 sog 반사방지 코팅 |
JP4381143B2 (ja) * | 2001-11-15 | 2009-12-09 | ハネウェル・インターナショナル・インコーポレーテッド | フォトリソグラフィー用スピンオン反射防止膜 |
AU2002357645A1 (en) * | 2002-09-20 | 2004-04-08 | Honeywell International, Inc. | Interlayer adhesion promoter for low k materials |
JP3951124B2 (ja) * | 2002-12-06 | 2007-08-01 | Jsr株式会社 | 絶縁膜 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
CN1758141B (zh) * | 2004-05-18 | 2013-12-11 | 罗姆及海斯电子材料有限公司 | 与外涂光刻胶一起使用的涂料组合物 |
US20060099819A1 (en) * | 2004-09-03 | 2006-05-11 | Rensselaer Polytechnic Institute | Low dielectric constant compositions and methods of use thereof |
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
JP4602842B2 (ja) * | 2005-06-07 | 2010-12-22 | 東京応化工業株式会社 | 反射防止膜形成用組成物、それを用いた反射防止膜 |
US7785768B2 (en) * | 2005-06-07 | 2010-08-31 | Tokyo Ohka Kogyo Co. Ltd. | Thermoacid generator for antireflection film formation, composition for antireflection film formation, and antireflection film made therefrom |
US7544750B2 (en) * | 2005-10-13 | 2009-06-09 | International Business Machines Corporation | Top antireflective coating composition with low refractive index at 193nm radiation wavelength |
KR101436336B1 (ko) * | 2005-12-06 | 2014-09-01 | 닛산 가가쿠 고교 가부시키 가이샤 | 광가교 경화의 레지스트 하층막을 형성하기 위한 규소 함유레지스트 하층막 형성 조성물 |
US7449538B2 (en) * | 2005-12-30 | 2008-11-11 | Hynix Semiconductor Inc. | Hard mask composition and method for manufacturing semiconductor device |
US7585613B2 (en) | 2006-01-25 | 2009-09-08 | Shin-Etsu Chemical Co., Ltd. | Antireflection film composition, substrate, and patterning process |
JP4781280B2 (ja) * | 2006-01-25 | 2011-09-28 | 信越化学工業株式会社 | 反射防止膜材料、基板、及びパターン形成方法 |
KR20070095736A (ko) * | 2006-03-22 | 2007-10-01 | 제일모직주식회사 | 유기실란계 중합체를 포함하는 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
WO2007144453A1 (en) * | 2006-06-13 | 2007-12-21 | Braggone Oy | Carbosilane polymer compositions for anti-reflective coatings |
US7927664B2 (en) * | 2006-08-28 | 2011-04-19 | International Business Machines Corporation | Method of step-and-flash imprint lithography |
JP4831330B2 (ja) * | 2006-08-28 | 2011-12-07 | 日産化学工業株式会社 | ポリカルボシランを含むレジスト下層膜形成組成物 |
JP5141858B2 (ja) * | 2006-09-19 | 2013-02-13 | 日産化学工業株式会社 | 電子線硬化のレジスト下層膜形成組成物 |
JP5051133B2 (ja) * | 2006-09-28 | 2012-10-17 | Jsr株式会社 | レジスト下層膜形成方法及びそれに用いるレジスト下層膜用組成物並びにパターン形成方法 |
KR100796047B1 (ko) * | 2006-11-21 | 2008-01-21 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스 |
US8642246B2 (en) * | 2007-02-26 | 2014-02-04 | Honeywell International Inc. | Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof |
JP5170511B2 (ja) * | 2007-04-05 | 2013-03-27 | 日産化学工業株式会社 | 電子線硬化のケイ素含有レジスト下層膜を形成するためのケイ素含有レジスト下層膜形成組成物 |
US8426112B2 (en) | 2007-09-11 | 2013-04-23 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition containing polymer having nitrogen-containing silyl group |
US20090081579A1 (en) * | 2007-09-24 | 2009-03-26 | International Business Machines Corporation | Functionalized carbosilane polymers and photoresist compositions containing the same |
US20090081598A1 (en) * | 2007-09-24 | 2009-03-26 | International Business Machines Corporation | Functionalized carbosilane polymers and photoresist compositions containing the same |
EP2209839A1 (en) * | 2007-11-06 | 2010-07-28 | Braggone OY | Carbosilane polymer compositions for anti-reflective coatings |
KR101579266B1 (ko) | 2008-01-11 | 2016-01-04 | 닛산 가가쿠 고교 가부시키 가이샤 | 우레아기를 가지는 실리콘 함유 레지스트 하층막 형성 조성물 |
CN101971102B (zh) * | 2008-01-29 | 2012-12-12 | 布鲁尔科技公司 | 用来通过多次暗视场曝光对硬掩模进行图案化的在线法 |
CN101946209B (zh) | 2008-02-18 | 2014-01-22 | 日产化学工业株式会社 | 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物 |
JP5621982B2 (ja) | 2008-08-18 | 2014-11-12 | 日産化学工業株式会社 | オニウム基を有するシリコン含有レジスト下層膜形成組成物 |
JP5534230B2 (ja) | 2008-12-19 | 2014-06-25 | 日産化学工業株式会社 | アニオン基を有するシリコン含有レジスト下層膜形成組成物 |
EP2216683B1 (en) * | 2009-02-08 | 2018-11-14 | Rohm and Haas Electronic Materials, L.L.C. | Substrates coated with an antireflective composition and a photoresist |
JP5353415B2 (ja) * | 2009-04-27 | 2013-11-27 | Jsr株式会社 | 着色組成物、カラーフィルタおよびカラー液晶表示素子 |
CN102460301B (zh) | 2009-06-02 | 2014-08-06 | 日产化学工业株式会社 | 含有带硫醚键的硅的抗蚀剂下层膜形成用组合物 |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
CN102498440B (zh) | 2009-09-16 | 2016-11-16 | 日产化学工业株式会社 | 含有具有磺酰胺基的硅的形成抗蚀剂下层膜的组合物 |
WO2011102470A1 (ja) | 2010-02-19 | 2011-08-25 | 日産化学工業株式会社 | 窒素含有環を有するシリコン含有レジスト下層膜形成組成物 |
US8323871B2 (en) * | 2010-02-24 | 2012-12-04 | International Business Machines Corporation | Antireflective hardmask composition and a method of preparing a patterned material using same |
JP5062352B2 (ja) | 2010-09-09 | 2012-10-31 | Jsr株式会社 | レジストパターン形成方法 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP6449145B2 (ja) * | 2012-04-23 | 2019-01-09 | ブルーワー サイエンス アイ エヌ シー. | 感光性、現像液可溶性の底面反射防止膜材料 |
US9627217B2 (en) * | 2012-04-23 | 2017-04-18 | Nissan Chemical Industries, Ltd. | Silicon-containing EUV resist underlayer film-forming composition including additive |
US9348228B2 (en) * | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
US9296879B2 (en) * | 2013-09-03 | 2016-03-29 | Rohm And Haas Electronic Materials Llc | Hardmask |
EP3068836A4 (en) * | 2013-11-13 | 2017-08-02 | Orthogonal Inc. | Branched fluorinated photopolymers |
WO2016111210A1 (ja) * | 2015-01-09 | 2016-07-14 | Jsr株式会社 | シリコン含有膜形成用組成物及び該組成物を用いたパターン形成方法 |
KR102273332B1 (ko) * | 2015-03-31 | 2021-07-06 | 닛산 가가쿠 가부시키가이샤 | 양이온 중합성 레지스트 하층막 형성 조성물 |
JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
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US4339305A (en) * | 1981-02-05 | 1982-07-13 | Rockwell International Corporation | Planar circuit fabrication by plating and liftoff |
US5001076A (en) * | 1987-10-23 | 1991-03-19 | Vitesse Semiconductor Corporation | Process for fabricating III-V devices using a composite dielectric layer |
TW473653B (en) * | 1997-05-27 | 2002-01-21 | Clariant Japan Kk | Composition for anti-reflective film or photo absorption film and compound used therein |
US6841256B2 (en) * | 1999-06-07 | 2005-01-11 | Honeywell International Inc. | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes |
US6440642B1 (en) * | 1999-09-15 | 2002-08-27 | Shipley Company, L.L.C. | Dielectric composition |
US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
US20040087153A1 (en) * | 2002-10-31 | 2004-05-06 | Yan Du | Method of etching a silicon-containing dielectric material |
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US7648820B2 (en) | 2010-01-19 |
US20070105363A1 (en) | 2007-05-10 |
US20050042538A1 (en) | 2005-02-24 |
CN1585097A (zh) | 2005-02-23 |
JP2005070776A (ja) | 2005-03-17 |
US7172849B2 (en) | 2007-02-06 |
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