JP4109809B2 - 酸化チタンを含む細線の製造方法 - Google Patents

酸化チタンを含む細線の製造方法 Download PDF

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Publication number
JP4109809B2
JP4109809B2 JP31060199A JP31060199A JP4109809B2 JP 4109809 B2 JP4109809 B2 JP 4109809B2 JP 31060199 A JP31060199 A JP 31060199A JP 31060199 A JP31060199 A JP 31060199A JP 4109809 B2 JP4109809 B2 JP 4109809B2
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Japan
Prior art keywords
titanium oxide
titanium
substrate
containing titanium
fine wire
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Expired - Fee Related
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JP31060199A
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English (en)
Japanese (ja)
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JP2000203998A (ja
JP2000203998A5 (enExample
Inventor
達哉 岩崎
透 田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP31060199A priority Critical patent/JP4109809B2/ja
Priority to US09/436,989 priority patent/US6270571B1/en
Publication of JP2000203998A publication Critical patent/JP2000203998A/ja
Publication of JP2000203998A5 publication Critical patent/JP2000203998A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Micromachines (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
JP31060199A 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法 Expired - Fee Related JP4109809B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP31060199A JP4109809B2 (ja) 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法
US09/436,989 US6270571B1 (en) 1998-11-10 1999-11-09 Method for producing narrow wires comprising titanium oxide, and narrow wires and structures produced by the same method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-318552 1998-11-10
JP31855298 1998-11-10
JP31060199A JP4109809B2 (ja) 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法

Publications (3)

Publication Number Publication Date
JP2000203998A JP2000203998A (ja) 2000-07-25
JP2000203998A5 JP2000203998A5 (enExample) 2004-12-02
JP4109809B2 true JP4109809B2 (ja) 2008-07-02

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JP31060199A Expired - Fee Related JP4109809B2 (ja) 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法

Country Status (2)

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US (1) US6270571B1 (enExample)
JP (1) JP4109809B2 (enExample)

Families Citing this family (38)

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RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
JP4620838B2 (ja) * 2000-06-16 2011-01-26 キヤノン株式会社 光電変換装置
US6649824B1 (en) 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
JP4672832B2 (ja) * 2000-06-16 2011-04-20 キヤノン株式会社 光電変換装置
JP3715911B2 (ja) 2000-09-21 2005-11-16 キヤノン株式会社 酸化物針状結晶の製造方法、酸化物針状結晶および光電変換装置
JP2002270867A (ja) * 2001-03-12 2002-09-20 Canon Inc 光電変換装置及びその製造方法
JP2002356400A (ja) * 2001-03-22 2002-12-13 Canon Inc 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置
WO2002102510A1 (fr) * 2001-06-15 2002-12-27 Andes Electric Co., Ltd. Materiau de photocatalyseur et son procede de preparation
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6596187B2 (en) * 2001-08-29 2003-07-22 Motorola, Inc. Method of forming a nano-supported sponge catalyst on a substrate for nanotube growth
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
EP1314801A1 (de) * 2001-11-27 2003-05-28 Finpar Holding S.A. Verfahren zum Züchten fadenformiger Kristalle und Vorrichtung zur Durchführung des Verfahrens
JP2005261988A (ja) * 2002-09-20 2005-09-29 Andes Denki Kk 光触媒材料とその製造方法
US7303723B2 (en) 2002-10-04 2007-12-04 The Ohio State University Research Foundation Method of forming nanostructures on ceramics
US20040142558A1 (en) 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
DE112004000507T5 (de) * 2003-04-15 2006-10-19 Sumitomo Chemical Co., Ltd. Titandioxid-Nanoröhre und Verfahren zu deren Herstellung
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US20050103639A1 (en) * 2003-11-18 2005-05-19 Fu-Hsing Lu Titanium dioxide film synthesizing method and the product thereof
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode
JP4840961B2 (ja) * 2004-03-23 2011-12-21 健二 久保村 高アスペクト比酸化鉄ウィスカー、高アスペクト比酸化チタンウィスカー及びこれらを含む構造並びにその製造方法
US20070292339A1 (en) * 2004-03-23 2007-12-20 Kanazawa R And D Ltd. Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them
JP4614063B2 (ja) * 2004-05-20 2011-01-19 日産自動車株式会社 ウィスカー形成体及びウィスカー形成体の製造方法
US7736209B2 (en) * 2004-09-10 2010-06-15 Applied Nanotech Holdings, Inc. Enhanced electron field emission from carbon nanotubes without activation
KR20060085465A (ko) * 2005-01-24 2006-07-27 삼성전자주식회사 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지
JP4650721B2 (ja) * 2005-02-16 2011-03-16 日産自動車株式会社 ウィスカー形成体及びこれを用いた電気化学キャパシタ
US7722923B2 (en) * 2005-02-24 2010-05-25 Central Research Institute Of Electric Power Industry Process for producing multifunctional material
WO2006106767A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路対及び伝送線路群
EP1905874B1 (en) * 2005-05-31 2013-03-27 Kyocera Corporation Complex containing array of acicular crystal, method for producing the same, photoelectric conversion element, light emitting element and capacitor
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7385231B2 (en) 2005-08-31 2008-06-10 Fujifilmcorporation Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
JP4734532B2 (ja) * 2005-11-28 2011-07-27 Ｔｏｔｏ株式会社 電子放出素子およびその製造方法
US20070264427A1 (en) * 2005-12-21 2007-11-15 Asm Japan K.K. Thin film formation by atomic layer growth and chemical vapor deposition
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
TWI450403B (zh) 2009-12-07 2014-08-21 Ind Tech Res Inst 染料敏化太陽電池及其製造方法
EP4126344A1 (en) * 2020-03-24 2023-02-08 Efenco OÜ Nanosized ceramic plasma catalyst for stabiliting and assisting plasma combustion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3210546B2 (ja) 1995-05-10 2001-09-17 ワイケイケイ株式会社 抗菌・防黴性の建築材料

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US6270571B1 (en) 2001-08-07

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