JP4109809B2 - 酸化チタンを含む細線の製造方法 - Google Patents

酸化チタンを含む細線の製造方法 Download PDF

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Publication number
JP4109809B2
JP4109809B2 JP31060199A JP31060199A JP4109809B2 JP 4109809 B2 JP4109809 B2 JP 4109809B2 JP 31060199 A JP31060199 A JP 31060199A JP 31060199 A JP31060199 A JP 31060199A JP 4109809 B2 JP4109809 B2 JP 4109809B2
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Japan
Prior art keywords
titanium oxide
titanium
substrate
containing titanium
fine wire
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Expired - Fee Related
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JP31060199A
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English (en)
Japanese (ja)
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JP2000203998A5 (enExample
JP2000203998A (ja
Inventor
達哉 岩崎
透 田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP31060199A priority Critical patent/JP4109809B2/ja
Priority to US09/436,989 priority patent/US6270571B1/en
Publication of JP2000203998A publication Critical patent/JP2000203998A/ja
Publication of JP2000203998A5 publication Critical patent/JP2000203998A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Micromachines (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
JP31060199A 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法 Expired - Fee Related JP4109809B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP31060199A JP4109809B2 (ja) 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法
US09/436,989 US6270571B1 (en) 1998-11-10 1999-11-09 Method for producing narrow wires comprising titanium oxide, and narrow wires and structures produced by the same method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31855298 1998-11-10
JP10-318552 1998-11-10
JP31060199A JP4109809B2 (ja) 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法

Publications (3)

Publication Number Publication Date
JP2000203998A JP2000203998A (ja) 2000-07-25
JP2000203998A5 JP2000203998A5 (enExample) 2004-12-02
JP4109809B2 true JP4109809B2 (ja) 2008-07-02

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JP31060199A Expired - Fee Related JP4109809B2 (ja) 1998-11-10 1999-11-01 酸化チタンを含む細線の製造方法

Country Status (2)

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US (1) US6270571B1 (enExample)
JP (1) JP4109809B2 (enExample)

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RU2099808C1 (ru) * 1996-04-01 1997-12-20 Евгений Инвиевич Гиваргизов Способ выращивания ориентированных систем нитевидных кристаллов и устройство для его осуществления (варианты)
JP4620838B2 (ja) * 2000-06-16 2011-01-26 キヤノン株式会社 光電変換装置
US6649824B1 (en) 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
JP4672832B2 (ja) * 2000-06-16 2011-04-20 キヤノン株式会社 光電変換装置
JP3715911B2 (ja) 2000-09-21 2005-11-16 キヤノン株式会社 酸化物針状結晶の製造方法、酸化物針状結晶および光電変換装置
JP2002270867A (ja) * 2001-03-12 2002-09-20 Canon Inc 光電変換装置及びその製造方法
JP2002356400A (ja) * 2001-03-22 2002-12-13 Canon Inc 酸化亜鉛の針状構造体の製造方法及びそれを用いた電池、光電変換装置
US7763113B2 (en) * 2001-06-15 2010-07-27 Andre Andes Electric Co., Ltd. Photocatalyst material and method for preparation thereof
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US6596187B2 (en) * 2001-08-29 2003-07-22 Motorola, Inc. Method of forming a nano-supported sponge catalyst on a substrate for nanotube growth
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
EP1314801A1 (de) * 2001-11-27 2003-05-28 Finpar Holding S.A. Verfahren zum Züchten fadenformiger Kristalle und Vorrichtung zur Durchführung des Verfahrens
JP2005261988A (ja) * 2002-09-20 2005-09-29 Andes Denki Kk 光触媒材料とその製造方法
WO2005000734A2 (en) 2002-10-04 2005-01-06 The Ohio State University Research Foundation Method of forming nanostructures on ceramics and the ceramics formed
US20040142558A1 (en) 2002-12-05 2004-07-22 Granneman Ernst H. A. Apparatus and method for atomic layer deposition on substrates
US8184930B2 (en) 2003-04-15 2012-05-22 Sumitomo Chemical Company, Limited Titania nanotube and method for producing same
US7601223B2 (en) * 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7537662B2 (en) * 2003-04-29 2009-05-26 Asm International N.V. Method and apparatus for depositing thin films on a surface
US20050103639A1 (en) * 2003-11-18 2005-05-19 Fu-Hsing Lu Titanium dioxide film synthesizing method and the product thereof
US7125308B2 (en) * 2003-12-18 2006-10-24 Nano-Proprietary, Inc. Bead blast activation of carbon nanotube cathode
JP4840961B2 (ja) * 2004-03-23 2011-12-21 健二 久保村 高アスペクト比酸化鉄ウィスカー、高アスペクト比酸化チタンウィスカー及びこれらを含む構造並びにその製造方法
WO2005090651A1 (ja) * 2004-03-23 2005-09-29 Kanazawa R And D Ltd. 高アスペクト比酸化鉄ウイスカー、高アスペクト比酸化チタンウイスカー及びこれらを含む構造並びにその製造方法
JP4614063B2 (ja) * 2004-05-20 2011-01-19 日産自動車株式会社 ウィスカー形成体及びウィスカー形成体の製造方法
US7736209B2 (en) * 2004-09-10 2010-06-15 Applied Nanotech Holdings, Inc. Enhanced electron field emission from carbon nanotubes without activation
KR20060085465A (ko) * 2005-01-24 2006-07-27 삼성전자주식회사 연속상 반도체 전극, 그의 제조방법 및 이를 채용한태양전지
JP4650721B2 (ja) * 2005-02-16 2011-03-16 日産自動車株式会社 ウィスカー形成体及びこれを用いた電気化学キャパシタ
KR100954176B1 (ko) * 2005-02-24 2010-04-20 자이단호징 덴료쿠추오켄큐쇼 다기능재의 제조 방법
WO2006106767A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路対及び伝送線路群
CN101189367B (zh) * 2005-05-31 2012-01-04 京瓷株式会社 含有针状结晶的排列体的复合体及其制造方法、以及光电转换元件、发光元件及电容器
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7385231B2 (en) 2005-08-31 2008-06-10 Fujifilmcorporation Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
JP4734532B2 (ja) * 2005-11-28 2011-07-27 Ｔｏｔｏ株式会社 電子放出素子およびその製造方法
US20070264427A1 (en) * 2005-12-21 2007-11-15 Asm Japan K.K. Thin film formation by atomic layer growth and chemical vapor deposition
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
TWI450403B (zh) 2009-12-07 2014-08-21 Ind Tech Res Inst 染料敏化太陽電池及其製造方法
JP2023532166A (ja) * 2020-03-24 2023-07-27 エフェンコ オーウー 燃焼の安定化およびプラズマ支援燃焼のためのナノセラミックプラズマ触媒

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3210546B2 (ja) 1995-05-10 2001-09-17 ワイケイケイ株式会社 抗菌・防黴性の建築材料

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JP2000203998A (ja) 2000-07-25

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