JP4099933B2 - 配線の製造方法、配線及び電気光学装置 - Google Patents
配線の製造方法、配線及び電気光学装置 Download PDFInfo
- Publication number
- JP4099933B2 JP4099933B2 JP2000195007A JP2000195007A JP4099933B2 JP 4099933 B2 JP4099933 B2 JP 4099933B2 JP 2000195007 A JP2000195007 A JP 2000195007A JP 2000195007 A JP2000195007 A JP 2000195007A JP 4099933 B2 JP4099933 B2 JP 4099933B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- group
- substrate
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims description 101
- 238000005530 etching Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 24
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- 239000000956 alloy Substances 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 238000009751 slip forming Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 380
- 239000010936 titanium Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 20
- 230000005012 migration Effects 0.000 description 17
- 238000013508 migration Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 12
- 239000010955 niobium Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 239000000382 optic material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 210000002445 nipple Anatomy 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- BLOIXGFLXPCOGW-UHFFFAOYSA-N [Ti].[Sn] Chemical compound [Ti].[Sn] BLOIXGFLXPCOGW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000195007A JP4099933B2 (ja) | 2000-06-28 | 2000-06-28 | 配線の製造方法、配線及び電気光学装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000195007A JP4099933B2 (ja) | 2000-06-28 | 2000-06-28 | 配線の製造方法、配線及び電気光学装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002016068A JP2002016068A (ja) | 2002-01-18 |
| JP2002016068A5 JP2002016068A5 (enExample) | 2004-12-16 |
| JP4099933B2 true JP4099933B2 (ja) | 2008-06-11 |
Family
ID=18693750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000195007A Expired - Fee Related JP4099933B2 (ja) | 2000-06-28 | 2000-06-28 | 配線の製造方法、配線及び電気光学装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4099933B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4781066B2 (ja) * | 2004-09-30 | 2011-09-28 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| JP4754798B2 (ja) * | 2004-09-30 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
-
2000
- 2000-06-28 JP JP2000195007A patent/JP4099933B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002016068A (ja) | 2002-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3866783B2 (ja) | 液晶表示装置 | |
| JP3433779B2 (ja) | アクティブマトリクス基板およびその製造方法 | |
| US6927815B2 (en) | Thin film transistor liquid crystal display and method for manufacturing the same | |
| US6208390B1 (en) | Electrode substrate resistant to wire breakage for an active matrix display device | |
| JP2000267140A (ja) | 液晶表示装置の製造方法 | |
| JP2004109248A (ja) | 液晶表示装置及びその製造方法 | |
| JP2003107523A (ja) | 液晶表示装置 | |
| JP4166300B2 (ja) | 液晶表示装置の製造方法 | |
| JP5437895B2 (ja) | 表示装置及びその製造方法 | |
| TW200811565A (en) | TFT array substrate and method of manufacturing the same, and display device using the same | |
| JP4497641B2 (ja) | 液晶表示装置及びその欠陥修復方法 | |
| US7079198B2 (en) | Wiring structure, method of manufacturing the same, electro-optical device, and electronic device | |
| JPH11109418A (ja) | 液晶表示装置用薄膜トランジスタアレイおよびその製造方法 | |
| JP4381691B2 (ja) | 液晶表示装置用基板及びそれを備えた液晶表示装置及びその製造方法 | |
| JPH11242241A (ja) | 液晶表示装置とその製造方法及び液晶表示装置に用いられるｔｆｔアレイ基板とその製造方法 | |
| JP2800958B2 (ja) | アクティブマトリクス基板 | |
| JP4099933B2 (ja) | 配線の製造方法、配線及び電気光学装置 | |
| JP4090594B2 (ja) | 反射型液晶表示装置およびその製造方法 | |
| JP2004070331A (ja) | 液晶表示装置の製造方法 | |
| JP4370810B2 (ja) | 電気光学装置用基板及びその製造方法並びに電気光学装置 | |
| JP2677714B2 (ja) | アクティブマトリクス基板およびその製造方法 | |
| JPH0862629A (ja) | 液晶表示装置 | |
| JPH10268346A (ja) | アクティブマトリクス型液晶表示装置 | |
| JP2690404B2 (ja) | アクティブマトリクス基板 | |
| JP2009271105A (ja) | 液晶表示装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040115 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040115 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050401 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070731 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070927 Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070927 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20070927 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20071113 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071225 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080108 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080226 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080310 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110328 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120328 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120328 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130328 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140328 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |