JP4091285B2 - フォトレジスト単量体、フォトレジスト重合体、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子 - Google Patents

フォトレジスト単量体、フォトレジスト重合体、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子 Download PDF

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JP4091285B2
JP4091285B2 JP2001322359A JP2001322359A JP4091285B2 JP 4091285 B2 JP4091285 B2 JP 4091285B2 JP 2001322359 A JP2001322359 A JP 2001322359A JP 2001322359 A JP2001322359 A JP 2001322359A JP 4091285 B2 JP4091285 B2 JP 4091285B2
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Japan
Prior art keywords
photoresist
group
polymer
tert
monomer
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Japanese (ja)
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JP2002169296A (ja
JP2002169296A5 (enExample
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根守 李
載昌 鄭
▲みん▼鎬 鄭
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SK Hynix Inc
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Hynix Semiconductor Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2001322359A 2000-11-17 2001-10-19 フォトレジスト単量体、フォトレジスト重合体、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子 Expired - Lifetime JP4091285B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2000-068423 2000-11-17
KR1020000068423A KR20020038283A (ko) 2000-11-17 2000-11-17 포토레지스트 단량체, 그의 중합체 및 이를 함유하는포토레지스트 조성물

Publications (3)

Publication Number Publication Date
JP2002169296A JP2002169296A (ja) 2002-06-14
JP2002169296A5 JP2002169296A5 (enExample) 2005-04-07
JP4091285B2 true JP4091285B2 (ja) 2008-05-28

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ID=19699654

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JP2001322359A Expired - Lifetime JP4091285B2 (ja) 2000-11-17 2001-10-19 フォトレジスト単量体、フォトレジスト重合体、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子

Country Status (4)

Country Link
US (1) US6686123B2 (enExample)
JP (1) JP4091285B2 (enExample)
KR (1) KR20020038283A (enExample)
TW (1) TW594401B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534239B2 (en) * 2001-04-27 2003-03-18 International Business Machines Corporation Resist compositions with polymers having pendant groups containing plural acid labile moieties
KR20040039731A (ko) * 2002-11-04 2004-05-12 주식회사 동진쎄미켐 디사이클로헥실이 결합된 펜던트 기를 가지는 화학적으로증폭된 고분자와 그 제조방법, 및 이를 포함하는 레지스트조성물
KR20050098955A (ko) * 2003-02-21 2005-10-12 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. 원자외선 리소그래피용 포토레지스트 조성물
US20040166434A1 (en) * 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
WO2008038682A1 (fr) * 2006-09-28 2008-04-03 Asahi Glass Company, Limited Nouveau polymère fluoré
US8852854B2 (en) * 2007-02-21 2014-10-07 Advanced Micro Devices, Inc. Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis
JP4475435B2 (ja) * 2007-07-30 2010-06-09 信越化学工業株式会社 含フッ素単量体、含フッ素高分子化合物、レジスト材料及びパターン形成方法
JP5155764B2 (ja) * 2007-08-20 2013-03-06 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
WO2009142181A1 (ja) * 2008-05-19 2009-11-26 Jsr株式会社 液浸露光用感放射線性樹脂組成物、重合体及びレジストパターン形成方法
WO2009142183A1 (ja) * 2008-05-19 2009-11-26 Jsr株式会社 新規化合物及び重合体並びに感放射線性組成物
JP5584894B2 (ja) * 2008-06-11 2014-09-10 ダイトーケミックス株式会社 含フッ素化合物および高分子化合物
JP5131488B2 (ja) * 2009-12-22 2013-01-30 信越化学工業株式会社 含フッ素単量体及び含フッ素高分子化合物
JP5403128B2 (ja) * 2012-09-12 2014-01-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP6317095B2 (ja) * 2013-11-29 2018-04-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
EP4282886A4 (en) * 2021-01-22 2024-07-31 FUJIFILM Corporation ACTINIC RAY OR RADIATION SENSITIVE RESIN COMPOSITION, ACTINIC RAY OR RADIATION SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, COMPOUND AND RESIN
JP2024154790A (ja) * 2023-04-19 2024-10-31 信越化学工業株式会社 モノマー、レジスト材料、レジスト組成物、及びパターン形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027081A (en) * 1972-07-28 1977-05-31 Stanley Turner Polymeric compositions containing hydrogen bonding compound
DE3421511A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Polymerisierbare, perfluoralkylgruppen aufweisende verbindungen, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
JPS6449039A (en) * 1987-08-20 1989-02-23 Tosoh Corp Method for forming positive resist pattern
JPH01215812A (ja) * 1988-02-25 1989-08-29 Tosoh Corp ポリアクリル酸誘導体
US5484822A (en) * 1991-06-24 1996-01-16 Polaroid Corporation Process and composition for cladding optic fibers
EP0583918B1 (en) * 1992-08-14 1999-03-10 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same
SG52630A1 (en) * 1993-10-12 1998-09-28 Hoechst Ag Top anti-reflective coating films
US6030747A (en) * 1997-03-07 2000-02-29 Nec Corporation Chemically amplified resist large in transparency and sensitivity to exposure light less than 248 nanometer wavelength and process of forming mask
JP2000298345A (ja) * 1999-04-14 2000-10-24 Toray Ind Inc ポジ型感放射線性組成物
TW588058B (en) * 2000-09-07 2004-05-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process

Also Published As

Publication number Publication date
TW594401B (en) 2004-06-21
US20020061466A1 (en) 2002-05-23
JP2002169296A (ja) 2002-06-14
KR20020038283A (ko) 2002-05-23
US6686123B2 (en) 2004-02-03

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