JP4085438B2 - 有機薄膜トランジスタ及び液晶素子と有機発光素子 - Google Patents

有機薄膜トランジスタ及び液晶素子と有機発光素子 Download PDF

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Publication number
JP4085438B2
JP4085438B2 JP27440196A JP27440196A JP4085438B2 JP 4085438 B2 JP4085438 B2 JP 4085438B2 JP 27440196 A JP27440196 A JP 27440196A JP 27440196 A JP27440196 A JP 27440196A JP 4085438 B2 JP4085438 B2 JP 4085438B2
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Japan
Prior art keywords
thin film
electrode
liquid crystal
organic
layer
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Expired - Lifetime
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JP27440196A
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English (en)
Japanese (ja)
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JPH10125924A (ja
JPH10125924A5 (enExample
Inventor
昭雄 滝本
一徳 小森
久則 杉浦
和廣 西山
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Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP27440196A priority Critical patent/JP4085438B2/ja
Publication of JPH10125924A publication Critical patent/JPH10125924A/ja
Publication of JPH10125924A5 publication Critical patent/JPH10125924A5/ja
Application granted granted Critical
Publication of JP4085438B2 publication Critical patent/JP4085438B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP27440196A 1996-10-17 1996-10-17 有機薄膜トランジスタ及び液晶素子と有機発光素子 Expired - Lifetime JP4085438B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27440196A JP4085438B2 (ja) 1996-10-17 1996-10-17 有機薄膜トランジスタ及び液晶素子と有機発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27440196A JP4085438B2 (ja) 1996-10-17 1996-10-17 有機薄膜トランジスタ及び液晶素子と有機発光素子

Publications (3)

Publication Number Publication Date
JPH10125924A JPH10125924A (ja) 1998-05-15
JPH10125924A5 JPH10125924A5 (enExample) 2007-09-20
JP4085438B2 true JP4085438B2 (ja) 2008-05-14

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JP27440196A Expired - Lifetime JP4085438B2 (ja) 1996-10-17 1996-10-17 有機薄膜トランジスタ及び液晶素子と有機発光素子

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JP (1) JP4085438B2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953947B2 (en) * 1999-12-31 2005-10-11 Lg Chem, Ltd. Organic thin film transistor
JP2003086804A (ja) * 2001-09-07 2003-03-20 Seiko Epson Corp 有機半導体装置
JP3856202B2 (ja) 2001-10-05 2006-12-13 日本電気株式会社 有機薄膜トランジスタ
JP3823312B2 (ja) 2001-10-18 2006-09-20 日本電気株式会社 有機薄膜トランジスタ
US7193237B2 (en) 2002-03-27 2007-03-20 Mitsubishi Chemical Corporation Organic semiconductor material and organic electronic device
JP2008270843A (ja) * 2002-03-27 2008-11-06 Mitsubishi Chemicals Corp 有機半導体材料及び有機電子デバイス
JP2004006750A (ja) * 2002-03-27 2004-01-08 Mitsubishi Chemicals Corp 有機半導体材料及び有機電子デバイス
US6821811B2 (en) 2002-08-02 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor
JP2004103905A (ja) * 2002-09-11 2004-04-02 Pioneer Electronic Corp 有機半導体素子
JP2004335557A (ja) * 2003-04-30 2004-11-25 Ricoh Co Ltd 縦型有機トランジスタ
US6861664B2 (en) * 2003-07-25 2005-03-01 Xerox Corporation Device with n-type semiconductor
JP4997688B2 (ja) * 2003-08-19 2012-08-08 セイコーエプソン株式会社 電極、薄膜トランジスタ、電子回路、表示装置および電子機器
KR100692448B1 (ko) 2003-11-17 2007-03-09 후지제롯쿠스 가부시끼가이샤 유기 반도체 트랜지스터 소자, 이것을 사용한 반도체 장치및 그 반도체 장치의 제조 방법
JP4774679B2 (ja) * 2004-03-31 2011-09-14 大日本印刷株式会社 有機半導体装置
JP4449549B2 (ja) 2004-04-15 2010-04-14 日本電気株式会社 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法
WO2005109542A1 (en) * 2004-05-11 2005-11-17 Lg Chem. Ltd. Organic electronic device
US8030645B2 (en) 2004-10-25 2011-10-04 Panasonic Corporation Electronic device, process for producing the same and electronic equipment making use thereof
JP4938984B2 (ja) * 2005-02-02 2012-05-23 独立行政法人理化学研究所 トップコンタクト型電界効果トランジスタの製造方法およびトップコンタクト型電界効果トランジスタ
KR100647683B1 (ko) 2005-03-08 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이를 구비한 평판 디스플레이 장치
KR101201304B1 (ko) 2005-05-06 2012-11-14 엘지디스플레이 주식회사 액정표시장치 및 그의 제조방법
JP2007019291A (ja) * 2005-07-08 2007-01-25 National Institute Of Advanced Industrial & Technology 有機半導体装置
JP5078246B2 (ja) * 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
US7521710B2 (en) 2006-02-16 2009-04-21 Idemitsu Kosan Co., Ltd. Organic thin film transistor
JP5368797B2 (ja) 2006-10-12 2013-12-18 出光興産株式会社 有機薄膜トランジスタ素子及び有機薄膜発光トランジスタ
US20100243993A1 (en) 2006-11-14 2010-09-30 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
US8022401B2 (en) 2006-11-14 2011-09-20 Idemitsu Kosan, Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
WO2008062841A1 (en) 2006-11-24 2008-05-29 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
US8148720B2 (en) 2006-11-24 2012-04-03 Idemitsu Kosan Co., Ltd. Organic thin film transistor and organic thin film light-emitting transistor
WO2008069060A1 (ja) 2006-12-04 2008-06-12 Idemitsu Kosan Co., Ltd. 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JPWO2008069061A1 (ja) 2006-12-04 2010-03-18 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP2010225758A (ja) 2009-03-23 2010-10-07 Fuji Xerox Co Ltd 有機半導体トランジスタ
JP4893767B2 (ja) 2009-03-24 2012-03-07 富士ゼロックス株式会社 有機半導体トランジスタ
JP5347690B2 (ja) 2009-04-30 2013-11-20 富士ゼロックス株式会社 有機電界発光素子、及び表示媒体
WO2011036866A1 (ja) * 2009-09-25 2011-03-31 出光興産株式会社 有機薄膜トランジスタ
JP5701861B2 (ja) 2010-04-22 2015-04-15 出光興産株式会社 有機薄膜トランジスタ
JP5966353B2 (ja) 2011-12-26 2016-08-10 富士ゼロックス株式会社 有機半導体トランジスタ
KR101872421B1 (ko) * 2016-04-12 2018-06-28 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법

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