JP4083053B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4083053B2
JP4083053B2 JP2003095804A JP2003095804A JP4083053B2 JP 4083053 B2 JP4083053 B2 JP 4083053B2 JP 2003095804 A JP2003095804 A JP 2003095804A JP 2003095804 A JP2003095804 A JP 2003095804A JP 4083053 B2 JP4083053 B2 JP 4083053B2
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JP
Japan
Prior art keywords
group
resin
examples
repeating unit
carbon atoms
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Expired - Fee Related
Application number
JP2003095804A
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English (en)
Japanese (ja)
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JP2004302198A5 (enExample
JP2004302198A (ja
Inventor
司 山中
健一郎 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2003095804A priority Critical patent/JP4083053B2/ja
Priority to US10/801,723 priority patent/US7252924B2/en
Publication of JP2004302198A publication Critical patent/JP2004302198A/ja
Publication of JP2004302198A5 publication Critical patent/JP2004302198A5/ja
Application granted granted Critical
Publication of JP4083053B2 publication Critical patent/JP4083053B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2003095804A 2003-03-31 2003-03-31 ポジ型レジスト組成物 Expired - Fee Related JP4083053B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003095804A JP4083053B2 (ja) 2003-03-31 2003-03-31 ポジ型レジスト組成物
US10/801,723 US7252924B2 (en) 2003-03-31 2004-03-17 Positive resist composition and method of pattern formation using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003095804A JP4083053B2 (ja) 2003-03-31 2003-03-31 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2004302198A JP2004302198A (ja) 2004-10-28
JP2004302198A5 JP2004302198A5 (enExample) 2005-09-22
JP4083053B2 true JP4083053B2 (ja) 2008-04-30

Family

ID=33095154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003095804A Expired - Fee Related JP4083053B2 (ja) 2003-03-31 2003-03-31 ポジ型レジスト組成物

Country Status (2)

Country Link
US (1) US7252924B2 (enExample)
JP (1) JP4083053B2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP4092571B2 (ja) * 2003-08-05 2008-05-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP2006003781A (ja) * 2004-06-21 2006-01-05 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
EP1621927B1 (en) 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4524207B2 (ja) * 2005-03-02 2010-08-11 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7538026B1 (en) 2005-04-04 2009-05-26 Advanced Micro Devices, Inc. Multilayer low reflectivity hard mask and process therefor
JP4672449B2 (ja) * 2005-06-13 2011-04-20 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
EP3537217B1 (en) 2005-12-09 2022-08-31 FUJIFILM Corporation Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
TWI358613B (en) * 2006-03-10 2012-02-21 Rohm & Haas Elect Mat Compositions and processes for photolithography
JP4783651B2 (ja) * 2006-03-17 2011-09-28 富士フイルム株式会社 ポジ型感光性組成物及びそれを用いたパターン形成方法
JP4783657B2 (ja) * 2006-03-27 2011-09-28 富士フイルム株式会社 ポジ型レジスト組成物及び該組成物を用いたパターン形成方法
JP2008209889A (ja) * 2007-01-31 2008-09-11 Fujifilm Corp ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
JP5060986B2 (ja) * 2007-02-27 2012-10-31 富士フイルム株式会社 ポジ型レジスト組成物及びパターン形成方法
JP4877388B2 (ja) * 2007-03-28 2012-02-15 Ｊｓｒ株式会社 ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法
JP5216253B2 (ja) * 2007-06-21 2013-06-19 東京応化工業株式会社 レジストパターン形成方法
JP5178220B2 (ja) * 2008-01-31 2013-04-10 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5460074B2 (ja) * 2008-03-10 2014-04-02 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2010079270A (ja) * 2008-08-29 2010-04-08 Fujifilm Corp パターン形成方法及びそれに用いる感光性組成物
JP5544212B2 (ja) 2009-04-27 2014-07-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物およびその製造方法、酸発生剤
US10295910B2 (en) 2009-12-15 2019-05-21 Rohm And Haas Electronic Materials Llc Photoresists and methods of use thereof
JP5598350B2 (ja) * 2010-02-16 2014-10-01 信越化学工業株式会社 電子線用又はｅｕｖ用化学増幅ネガ型レジスト組成物及びパターン形成方法
JP5598351B2 (ja) * 2010-02-16 2014-10-01 信越化学工業株式会社 電子線用又はｅｕｖ用化学増幅ポジ型レジスト組成物及びパターン形成方法
CN102262356B (zh) * 2010-05-27 2013-01-02 中芯国际集成电路制造(上海)有限公司 接触孔的形成方法
JP5900340B2 (ja) * 2010-09-17 2016-04-06 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
EP2492750A1 (en) * 2011-02-28 2012-08-29 Rohm and Haas Electronic Materials LLC Photoresist compositions and methods of forming photolithographic patterns
JP6118500B2 (ja) 2011-02-28 2017-04-19 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法
JP6006999B2 (ja) * 2012-06-20 2016-10-12 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
US9851636B2 (en) * 2012-07-05 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Materials and methods for improved photoresist performance
US10179778B2 (en) * 2013-09-27 2019-01-15 Rohm And Haas Electronic Materials Llc Substituted aryl onium materials

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US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
US6042991A (en) * 1997-02-18 2000-03-28 Fuji Photo Film Co., Ltd. Positive working photosensitive composition
JP3902835B2 (ja) * 1997-06-27 2007-04-11 東京応化工業株式会社 ポジ型ホトレジスト組成物
US6146806A (en) * 1998-04-06 2000-11-14 Nec Corporation Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same
JP3810957B2 (ja) 1998-08-06 2006-08-16 株式会社東芝 レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
US6303266B1 (en) * 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
JP4131062B2 (ja) 1998-09-25 2008-08-13 信越化学工業株式会社 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
US6437052B1 (en) * 1998-11-02 2002-08-20 Nec Corporation Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
JP4144957B2 (ja) * 1999-01-22 2008-09-03 富士通株式会社 レジスト組成物及びレジストパターンの形成方法
US6403280B1 (en) * 1999-04-28 2002-06-11 Jsr Corporation Radiation sensitive resin composition
US6596458B1 (en) * 1999-05-07 2003-07-22 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP3547047B2 (ja) 1999-05-26 2004-07-28 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP3755571B2 (ja) * 1999-11-12 2006-03-15 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
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US6777160B2 (en) * 2001-03-12 2004-08-17 Fuji Photo Film Co., Ltd. Positive-working resist composition
JP4255100B2 (ja) * 2001-04-06 2009-04-15 富士フイルム株式会社 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法
US6927009B2 (en) * 2001-05-22 2005-08-09 Fuji Photo Film Co., Ltd. Positive photosensitive composition
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JP3642316B2 (ja) * 2001-06-15 2005-04-27 日本電気株式会社 化学増幅レジスト用単量体、化学増幅レジスト用重合体、化学増幅レジスト組成物、パターン形成方法
CN1276303C (zh) * 2001-06-29 2006-09-20 Jsr株式会社 酸发生剂及辐射敏感树脂组合物
JP4420169B2 (ja) * 2001-09-12 2010-02-24 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP4149154B2 (ja) * 2001-09-28 2008-09-10 富士フイルム株式会社 ポジ型レジスト組成物
JP3841399B2 (ja) * 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
JP2003241384A (ja) * 2002-02-22 2003-08-27 Jsr Corp 感放射線性樹脂組成物
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition

Also Published As

Publication number Publication date
US20040197707A1 (en) 2004-10-07
JP2004302198A (ja) 2004-10-28
US7252924B2 (en) 2007-08-07

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