JP4071005B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4071005B2 JP4071005B2 JP2002020801A JP2002020801A JP4071005B2 JP 4071005 B2 JP4071005 B2 JP 4071005B2 JP 2002020801 A JP2002020801 A JP 2002020801A JP 2002020801 A JP2002020801 A JP 2002020801A JP 4071005 B2 JP4071005 B2 JP 4071005B2
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- Prior art keywords
- semiconductor film
- film
- semiconductor
- barrier layer
- forming
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- 239000004065 semiconductor Substances 0.000 title claims description 313
- 238000000034 method Methods 0.000 title claims description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 84
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- 239000007789 gas Substances 0.000 claims description 56
- 230000004888 barrier function Effects 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- 239000010703 silicon Substances 0.000 claims description 50
- 229910052759 nickel Inorganic materials 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 25
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- 238000005468 ion implantation Methods 0.000 claims description 12
- 229910052724 xenon Inorganic materials 0.000 claims description 10
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 8
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- 238000002347 injection Methods 0.000 description 3
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- 229910021334 nickel silicide Inorganic materials 0.000 description 3
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- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
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- 238000013532 laser treatment Methods 0.000 description 1
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- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
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- Thin Film Transistor (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002020801A JP4071005B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-19367 | 2001-01-29 | ||
| JP2001019367 | 2001-01-29 | ||
| JP2002020801A JP4071005B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002313811A JP2002313811A (ja) | 2002-10-25 |
| JP2002313811A5 JP2002313811A5 (enExample) | 2005-08-11 |
| JP4071005B2 true JP4071005B2 (ja) | 2008-04-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002020801A Expired - Fee Related JP4071005B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4071005B2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593686B (zh) * | 2008-05-30 | 2011-10-05 | 中芯国际集成电路制造(北京)有限公司 | 金属栅极形成方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6933527B2 (en) | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
| JP4011344B2 (ja) | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1326273B1 (en) | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2003204067A (ja) | 2001-12-28 | 2003-07-18 | Semiconductor Energy Lab Co Ltd | 表示装置およびそれを用いた電子機器 |
| US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
| TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| TWI272666B (en) | 2002-01-28 | 2007-02-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
| CN101217150B (zh) | 2002-03-05 | 2011-04-06 | 株式会社半导体能源研究所 | 半导体元件和使用半导体元件的半导体装置 |
| US6847050B2 (en) | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
| US6930326B2 (en) | 2002-03-26 | 2005-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit and method of fabricating the same |
| JP4115252B2 (ja) * | 2002-11-08 | 2008-07-09 | シャープ株式会社 | 半導体膜およびその製造方法ならびに半導体装置およびその製造方法 |
| US7374976B2 (en) | 2002-11-22 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating thin film transistor |
| JP5046464B2 (ja) * | 2002-12-18 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体記憶素子の作製方法 |
| US7015496B2 (en) * | 2002-12-27 | 2006-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Field emission device and manufacturing method thereof |
| US20060202269A1 (en) | 2005-03-08 | 2006-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic appliance having the same |
| KR101221131B1 (ko) * | 2006-11-30 | 2013-01-18 | 엘지디스플레이 주식회사 | 폴리실리콘 반도체 소자의 제조 방법 |
| US7791172B2 (en) * | 2007-03-19 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| KR102729031B1 (ko) * | 2020-04-09 | 2024-11-14 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
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2002
- 2002-01-29 JP JP2002020801A patent/JP4071005B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101593686B (zh) * | 2008-05-30 | 2011-10-05 | 中芯国际集成电路制造(北京)有限公司 | 金属栅极形成方法 |
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