JP4068801B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4068801B2
JP4068801B2 JP2000365486A JP2000365486A JP4068801B2 JP 4068801 B2 JP4068801 B2 JP 4068801B2 JP 2000365486 A JP2000365486 A JP 2000365486A JP 2000365486 A JP2000365486 A JP 2000365486A JP 4068801 B2 JP4068801 B2 JP 4068801B2
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JP
Japan
Prior art keywords
wiring
semiconductor device
film
bump
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000365486A
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English (en)
Japanese (ja)
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JP2002170826A5 (https=
JP2002170826A (ja
Inventor
健二 氏家
健一 山本
順一 有田
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000365486A priority Critical patent/JP4068801B2/ja
Priority to TW090127568A priority patent/TW550767B/zh
Priority to US09/988,684 priority patent/US6661093B2/en
Priority to KR1020010072882A priority patent/KR100842976B1/ko
Publication of JP2002170826A publication Critical patent/JP2002170826A/ja
Publication of JP2002170826A5 publication Critical patent/JP2002170826A5/ja
Application granted granted Critical
Publication of JP4068801B2 publication Critical patent/JP4068801B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/25—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons against alpha rays, e.g. for outer space applications
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
JP2000365486A 2000-11-30 2000-11-30 半導体装置 Expired - Fee Related JP4068801B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000365486A JP4068801B2 (ja) 2000-11-30 2000-11-30 半導体装置
TW090127568A TW550767B (en) 2000-11-30 2001-11-06 Semiconductor device and its manufacturing method
US09/988,684 US6661093B2 (en) 2000-11-30 2001-11-20 Semiconductor device
KR1020010072882A KR100842976B1 (ko) 2000-11-30 2001-11-22 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000365486A JP4068801B2 (ja) 2000-11-30 2000-11-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2002170826A JP2002170826A (ja) 2002-06-14
JP2002170826A5 JP2002170826A5 (https=) 2005-02-17
JP4068801B2 true JP4068801B2 (ja) 2008-03-26

Family

ID=18836249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000365486A Expired - Fee Related JP4068801B2 (ja) 2000-11-30 2000-11-30 半導体装置

Country Status (4)

Country Link
US (1) US6661093B2 (https=)
JP (1) JP4068801B2 (https=)
KR (1) KR100842976B1 (https=)
TW (1) TW550767B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6854636B2 (en) * 2002-12-06 2005-02-15 International Business Machines Corporation Structure and method for lead free solder electronic package interconnections
DE10308275A1 (de) * 2003-02-26 2004-09-16 Advanced Micro Devices, Inc., Sunnyvale Strahlungsresistentes Halbleiterbauteil
JP2005211946A (ja) * 2004-01-30 2005-08-11 Renesas Technology Corp 半田合金および半導体装置
TWI233170B (en) * 2004-02-05 2005-05-21 United Microelectronics Corp Ultra-thin wafer level stack packaging method and structure using thereof
JP3880600B2 (ja) * 2004-02-10 2007-02-14 松下電器産業株式会社 半導体装置およびその製造方法
TWI254428B (en) * 2004-11-24 2006-05-01 Advanced Chip Eng Tech Inc FCBGA package structure
US7468545B2 (en) * 2005-05-06 2008-12-23 Megica Corporation Post passivation structure for a semiconductor device and packaging process for same
JP5000877B2 (ja) * 2005-10-07 2012-08-15 ルネサスエレクトロニクス株式会社 半導体装置
US7381635B2 (en) * 2005-07-18 2008-06-03 International Business Machines Corporation Method and structure for reduction of soft error rates in integrated circuits
US20070176292A1 (en) * 2006-01-27 2007-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
US7386817B1 (en) 2007-01-02 2008-06-10 International Business Machines Corporation Method of determining stopping powers of design structures with respect to a traveling particle
WO2009013826A1 (ja) * 2007-07-25 2009-01-29 Fujitsu Microelectronics Limited 半導体装置
ATE541310T1 (de) 2007-10-09 2012-01-15 Fujitsu Ltd Integriertes halbleiterschaltungsbauelement
JP4850852B2 (ja) * 2008-01-09 2012-01-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8261229B2 (en) * 2010-01-29 2012-09-04 Xilinx, Inc. Method and apparatus for interconnect layout in an integrated circuit
US10109609B2 (en) 2014-01-13 2018-10-23 Infineon Technologies Austria Ag Connection structure and electronic component
JP5590260B1 (ja) * 2014-02-04 2014-09-17 千住金属工業株式会社 Ａｇボール、Ａｇ核ボール、フラックスコートＡｇボール、フラックスコートＡｇ核ボール、はんだ継手、フォームはんだ、はんだペースト、Ａｇペースト及びＡｇ核ペースト
JP5534122B1 (ja) * 2014-02-04 2014-06-25 千住金属工業株式会社 核ボール、はんだペースト、フォームはんだ、フラックスコート核ボールおよびはんだ継手
JP6522980B2 (ja) 2015-02-18 2019-05-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102454892B1 (ko) 2015-12-09 2022-10-14 삼성전자주식회사 반도체 칩, 이를 포함하는 반도체 패키지, 및 반도체 칩의 제조 방법
US20190006342A1 (en) * 2017-06-30 2019-01-03 Intel Corporation Rigid adhesive package-on-package semiconductors
US10580783B2 (en) 2018-03-01 2020-03-03 Sandisk Technologies Llc Multi-tier three-dimensional memory device containing differential etch rate field oxides and method of making the same
JP2020047714A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 半導体メモリおよびその製造方法
JP7179587B2 (ja) * 2018-11-12 2022-11-29 株式会社東芝 半導体装置
JP2020155596A (ja) 2019-03-20 2020-09-24 キオクシア株式会社 半導体装置
JP2022083468A (ja) * 2020-11-25 2022-06-06 ソニーグループ株式会社 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111317A (en) * 1996-01-18 2000-08-29 Kabushiki Kaisha Toshiba Flip-chip connection type semiconductor integrated circuit device
US6022792A (en) * 1996-03-13 2000-02-08 Seiko Instruments, Inc. Semiconductor dicing and assembling method
JPH11111885A (ja) 1997-10-07 1999-04-23 Sony Corp 半導体装置およびその製造方法
JP3768817B2 (ja) 1997-10-30 2006-04-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR100842976B1 (ko) 2008-07-01
TW550767B (en) 2003-09-01
KR20020042430A (ko) 2002-06-05
US20020074656A1 (en) 2002-06-20
US6661093B2 (en) 2003-12-09
JP2002170826A (ja) 2002-06-14

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