JP4066607B2 - 電気光学装置及びプロジェクタ - Google Patents
電気光学装置及びプロジェクタ Download PDFInfo
- Publication number
- JP4066607B2 JP4066607B2 JP2001070364A JP2001070364A JP4066607B2 JP 4066607 B2 JP4066607 B2 JP 4066607B2 JP 2001070364 A JP2001070364 A JP 2001070364A JP 2001070364 A JP2001070364 A JP 2001070364A JP 4066607 B2 JP4066607 B2 JP 4066607B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- light
- line
- electro
- optical device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010408 film Substances 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 122
- 239000010409 thin film Substances 0.000 claims description 37
- 239000003990 capacitor Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 13
- 238000003860 storage Methods 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000000382 optic material Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 53
- 239000010410 layer Substances 0.000 description 44
- 230000005684 electric field Effects 0.000 description 38
- 239000004973 liquid crystal related substance Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 24
- 239000011229 interlayer Substances 0.000 description 21
- 230000002829 reductive effect Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001070364A JP4066607B2 (ja) | 2000-03-13 | 2001-03-13 | 電気光学装置及びプロジェクタ |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000069413 | 2000-03-13 | ||
| JP2000-69413 | 2000-03-13 | ||
| JP2001070364A JP4066607B2 (ja) | 2000-03-13 | 2001-03-13 | 電気光学装置及びプロジェクタ |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007066327A Division JP4023522B2 (ja) | 2000-03-13 | 2007-03-15 | 電気光学装置及びプロジェクタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001330861A JP2001330861A (ja) | 2001-11-30 |
| JP2001330861A5 JP2001330861A5 (enrdf_load_stackoverflow) | 2004-12-24 |
| JP4066607B2 true JP4066607B2 (ja) | 2008-03-26 |
Family
ID=26587373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001070364A Expired - Fee Related JP4066607B2 (ja) | 2000-03-13 | 2001-03-13 | 電気光学装置及びプロジェクタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4066607B2 (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4193792B2 (ja) | 2004-11-30 | 2008-12-10 | エプソンイメージングデバイス株式会社 | 液晶表示パネル |
| JP4475238B2 (ja) | 2006-01-13 | 2010-06-09 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに電子機器 |
| CN109343287B (zh) * | 2018-11-23 | 2022-03-25 | 昆山龙腾光电股份有限公司 | 阵列基板和液晶显示装置及驱动方法 |
| CN119065167A (zh) * | 2023-05-31 | 2024-12-03 | 北京京东方显示技术有限公司 | 显示面板、显示装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6186778U (enrdf_load_stackoverflow) * | 1984-11-09 | 1986-06-06 | ||
| JPH0572562A (ja) * | 1991-09-18 | 1993-03-26 | Seiko Epson Corp | アクテイブマトリクス型表示装置 |
| JPH09146117A (ja) * | 1995-11-24 | 1997-06-06 | Hitachi Ltd | 液晶表示基板 |
| JP3751681B2 (ja) * | 1996-06-11 | 2006-03-01 | ソニー株式会社 | 液晶表示装置及びその製造方法 |
| JP3669082B2 (ja) * | 1996-10-17 | 2005-07-06 | ソニー株式会社 | 液晶表示素子用薄膜トランジスタアレイ |
| US6850292B1 (en) * | 1998-12-28 | 2005-02-01 | Seiko Epson Corporation | Electric-optic device, method of fabricating the same, and electronic apparatus |
| JP3503685B2 (ja) * | 1999-08-30 | 2004-03-08 | 日本電気株式会社 | 液晶表示装置及びその製造方法 |
-
2001
- 2001-03-13 JP JP2001070364A patent/JP4066607B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001330861A (ja) | 2001-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100481593B1 (ko) | 전기 광학 장치 | |
| KR100484343B1 (ko) | 전기 광학 장치 | |
| JP3381718B2 (ja) | 電気光学装置及びその製造方法並びに電子機器 | |
| JP3736461B2 (ja) | 電気光学装置、投射型表示装置及び電気光学装置の製造方法 | |
| JP3753613B2 (ja) | 電気光学装置及びそれを用いたプロジェクタ | |
| JP3424234B2 (ja) | 電気光学装置及びその製造方法 | |
| JP4599655B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3821067B2 (ja) | 電気光学装置及び電子機器 | |
| JP3743291B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3608531B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3937721B2 (ja) | 電気光学装置及びその製造方法並びにプロジェクタ | |
| JP4023522B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP3931547B2 (ja) | 電気光学装置及びその製造方法 | |
| JP3830361B2 (ja) | Ｔｆｔアレイ基板、電気光学装置及び投射型表示装置 | |
| JP3849434B2 (ja) | 電気光学装置及び投射型表示装置 | |
| KR20040055688A (ko) | 전기 광학 기판의 제조 방법, 전기 광학 장치의 제조방법, 전기 광학 장치 | |
| JP3799943B2 (ja) | 電気光学装置およびプロジェクタ | |
| JP4019600B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP2000091581A (ja) | 電気光学装置及びその製造方法並びに電子機器 | |
| JP3783500B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP4496600B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP4066607B2 (ja) | 電気光学装置及びプロジェクタ | |
| JP2001265255A6 (ja) | 電気光学装置及びその製造方法 | |
| JP3982183B2 (ja) | 電気光学装置及び投射型表示装置 | |
| JP3965935B2 (ja) | 電気光学装置及び投射型表示装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040122 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20040122 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060317 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070116 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070316 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070612 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070808 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070911 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20071010 |
|
| A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20071116 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071218 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071231 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110118 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4066607 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110118 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120118 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120118 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130118 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130118 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140118 Year of fee payment: 6 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |