JP4053702B2 - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP4053702B2
JP4053702B2 JP33660699A JP33660699A JP4053702B2 JP 4053702 B2 JP4053702 B2 JP 4053702B2 JP 33660699 A JP33660699 A JP 33660699A JP 33660699 A JP33660699 A JP 33660699A JP 4053702 B2 JP4053702 B2 JP 4053702B2
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JP
Japan
Prior art keywords
film
insulating film
bit line
storage electrode
contact plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP33660699A
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English (en)
Japanese (ja)
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JP2001156269A5 (enExample
JP2001156269A (ja
Inventor
克彦 稗田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP33660699A priority Critical patent/JP4053702B2/ja
Priority to US09/718,389 priority patent/US6388282B1/en
Publication of JP2001156269A publication Critical patent/JP2001156269A/ja
Publication of JP2001156269A5 publication Critical patent/JP2001156269A5/ja
Application granted granted Critical
Publication of JP4053702B2 publication Critical patent/JP4053702B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP33660699A 1999-11-26 1999-11-26 半導体記憶装置及びその製造方法 Expired - Fee Related JP4053702B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP33660699A JP4053702B2 (ja) 1999-11-26 1999-11-26 半導体記憶装置及びその製造方法
US09/718,389 US6388282B1 (en) 1999-11-26 2000-11-24 Semiconductor memory device and method of manufacture the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33660699A JP4053702B2 (ja) 1999-11-26 1999-11-26 半導体記憶装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2001156269A JP2001156269A (ja) 2001-06-08
JP2001156269A5 JP2001156269A5 (enExample) 2005-09-02
JP4053702B2 true JP4053702B2 (ja) 2008-02-27

Family

ID=18300905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33660699A Expired - Fee Related JP4053702B2 (ja) 1999-11-26 1999-11-26 半導体記憶装置及びその製造方法

Country Status (2)

Country Link
US (1) US6388282B1 (enExample)
JP (1) JP4053702B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382730B1 (ko) * 2000-12-14 2003-05-09 삼성전자주식회사 반도체 소자의 금속 컨택 구조체 및 그 형성방법
KR20030002896A (ko) * 2001-06-30 2003-01-09 주식회사 하이닉스반도체 캐패시터의 제조 방법
US7045844B2 (en) * 2002-06-21 2006-05-16 Micron Technology, Inc. Memory cell and method for forming the same
US6756625B2 (en) * 2002-06-21 2004-06-29 Micron Technology, Inc. Memory cell and method for forming the same
KR100481173B1 (ko) * 2002-07-12 2005-04-07 삼성전자주식회사 다마신 비트라인공정을 이용한 반도체 메모리장치 및 그의제조방법
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
US20110042722A1 (en) * 2009-08-21 2011-02-24 Nanya Technology Corp. Integrated circuit structure and memory array
KR101096835B1 (ko) * 2010-01-08 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 형성 방법
KR20160013765A (ko) * 2014-07-28 2016-02-05 삼성전자주식회사 반도체 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3749776B2 (ja) * 1997-02-28 2006-03-01 株式会社東芝 半導体装置
JPH1117116A (ja) 1997-06-27 1999-01-22 Toshiba Corp 半導体装置およびその製造方法
US6278152B1 (en) 1997-06-27 2001-08-21 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
US6388282B1 (en) 2002-05-14
JP2001156269A (ja) 2001-06-08

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