JP4053263B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4053263B2
JP4053263B2 JP2001247868A JP2001247868A JP4053263B2 JP 4053263 B2 JP4053263 B2 JP 4053263B2 JP 2001247868 A JP2001247868 A JP 2001247868A JP 2001247868 A JP2001247868 A JP 2001247868A JP 4053263 B2 JP4053263 B2 JP 4053263B2
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JP
Japan
Prior art keywords
semiconductor device
manufacturing
film
phase shift
mask
Prior art date
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Expired - Fee Related
Application number
JP2001247868A
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English (en)
Japanese (ja)
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JP2003059805A5 (https=
JP2003059805A (ja
Inventor
稔彦 田中
昇雄 長谷川
恒男 寺澤
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001247868A priority Critical patent/JP4053263B2/ja
Priority to KR1020020030529A priority patent/KR100856167B1/ko
Priority to US10/170,647 priority patent/US6645856B2/en
Priority to TW091115633A priority patent/TW556277B/zh
Publication of JP2003059805A publication Critical patent/JP2003059805A/ja
Publication of JP2003059805A5 publication Critical patent/JP2003059805A5/ja
Application granted granted Critical
Publication of JP4053263B2 publication Critical patent/JP4053263B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001247868A 2001-08-17 2001-08-17 半導体装置の製造方法 Expired - Fee Related JP4053263B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001247868A JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法
KR1020020030529A KR100856167B1 (ko) 2001-08-17 2002-05-31 반도체장치의 제조방법
US10/170,647 US6645856B2 (en) 2001-08-17 2002-06-14 Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate
TW091115633A TW556277B (en) 2001-08-17 2002-07-15 Method for manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001247868A JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003059805A JP2003059805A (ja) 2003-02-28
JP2003059805A5 JP2003059805A5 (https=) 2005-06-16
JP4053263B2 true JP4053263B2 (ja) 2008-02-27

Family

ID=19077116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001247868A Expired - Fee Related JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US6645856B2 (https=)
JP (1) JP4053263B2 (https=)
KR (1) KR100856167B1 (https=)
TW (1) TW556277B (https=)

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TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
US6765296B2 (en) * 2002-01-10 2004-07-20 Chartered Semiconductor Manufacturing Ltd. Via-sea layout integrated circuits
US6872646B2 (en) * 2002-06-07 2005-03-29 Dia Nippon Printing Co., Ltd. Method for manufacturing conductive pattern substrate
US7018556B2 (en) * 2003-10-10 2006-03-28 Asml Holding N.V. Method to etch chrome deposited on calcium fluoride object
CN100461424C (zh) * 2003-12-30 2009-02-11 中芯国际集成电路制造(上海)有限公司 半导体集成电路隧道氧化窗口区域设计的结构及方法
US7794897B2 (en) * 2004-03-02 2010-09-14 Kabushiki Kaisha Toshiba Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
KR100745065B1 (ko) * 2004-12-27 2007-08-01 주식회사 하이닉스반도체 위상반전 마스크의 성장성 이물질 제거방법
JP4718894B2 (ja) * 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7755207B2 (en) 2005-07-27 2010-07-13 Ricoh Company, Ltd. Wafer, reticle, and exposure method using the wafer and reticle
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
TWI400758B (zh) * 2005-12-28 2013-07-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR100732769B1 (ko) 2006-01-09 2007-06-27 주식회사 하이닉스반도체 포토마스크 제조방법
JP4791207B2 (ja) * 2006-02-16 2011-10-12 富士通セミコンダクター株式会社 位相シフトレチクルとその製造方法とその欠陥検査方法
JP4900045B2 (ja) * 2007-05-28 2012-03-21 富士通セミコンダクター株式会社 フォトマスクの遮光帯作成方法及び遮光帯データ作成装置
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP5360399B2 (ja) * 2009-08-06 2013-12-04 大日本印刷株式会社 回折格子作製用位相マスク
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
JP5994952B2 (ja) * 2015-02-03 2016-09-21 大日本印刷株式会社 蒸着マスクの製造方法、蒸着マスク製造装置、レーザー用マスクおよび有機半導体素子の製造方法
US10908494B2 (en) * 2017-05-31 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and manufacturing method thereof
JP6799723B1 (ja) * 2019-04-16 2020-12-16 信越化学工業株式会社 ペリクル用粘着剤、ペリクル、ペリクル付露光原版、半導体装置の製造方法、液晶表示板の製造方法、露光原版の再生方法及び剥離残渣低減方法
JP2020179408A (ja) * 2019-04-25 2020-11-05 イビデン株式会社 エキシマレーザーによる加工方法
KR102473558B1 (ko) * 2019-10-23 2022-12-05 주식회사 에스앤에스텍 극자외선 리소그래피용 하프톤 위상반전 블랭크 마스크 및 포토마스크

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JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
JPH05289307A (ja) * 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JPH0619112A (ja) * 1992-07-03 1994-01-28 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法
US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
KR950027933A (ko) * 1994-03-21 1995-10-18 김주용 위상반전 마스크
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法
JP2728078B2 (ja) * 1996-02-28 1998-03-18 日本電気株式会社 半導体装置の製造方法
KR100219079B1 (ko) * 1996-06-29 1999-09-01 김영환 해프톤 위상 반전 마스크
US6174631B1 (en) * 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP3715189B2 (ja) * 2000-09-21 2005-11-09 株式会社ルネサステクノロジ 位相シフトマスク

Also Published As

Publication number Publication date
KR100856167B1 (ko) 2008-09-03
TW556277B (en) 2003-10-01
US6645856B2 (en) 2003-11-11
JP2003059805A (ja) 2003-02-28
KR20030015824A (ko) 2003-02-25
US20030036293A1 (en) 2003-02-20

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