TW556277B - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device Download PDF

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Publication number
TW556277B
TW556277B TW091115633A TW91115633A TW556277B TW 556277 B TW556277 B TW 556277B TW 091115633 A TW091115633 A TW 091115633A TW 91115633 A TW91115633 A TW 91115633A TW 556277 B TW556277 B TW 556277B
Authority
TW
Taiwan
Prior art keywords
manufacturing
mask
film
semiconductor device
phase shift
Prior art date
Application number
TW091115633A
Other languages
English (en)
Chinese (zh)
Inventor
Toshihiko Tanaka
Norio Hasegawa
Tsuneo Terasawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW556277B publication Critical patent/TW556277B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/946—Step and repeat

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW091115633A 2001-08-17 2002-07-15 Method for manufacturing a semiconductor device TW556277B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001247868A JP4053263B2 (ja) 2001-08-17 2001-08-17 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW556277B true TW556277B (en) 2003-10-01

Family

ID=19077116

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091115633A TW556277B (en) 2001-08-17 2002-07-15 Method for manufacturing a semiconductor device

Country Status (4)

Country Link
US (1) US6645856B2 (https=)
JP (1) JP4053263B2 (https=)
KR (1) KR100856167B1 (https=)
TW (1) TW556277B (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI767369B (zh) * 2019-10-23 2022-06-11 南韓商S&S技術股份有限公司 半色調衰減式相移空白遮罩以及用於極紫外光微影的光罩

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TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
US6765296B2 (en) * 2002-01-10 2004-07-20 Chartered Semiconductor Manufacturing Ltd. Via-sea layout integrated circuits
US6872646B2 (en) * 2002-06-07 2005-03-29 Dia Nippon Printing Co., Ltd. Method for manufacturing conductive pattern substrate
US7018556B2 (en) * 2003-10-10 2006-03-28 Asml Holding N.V. Method to etch chrome deposited on calcium fluoride object
CN100461424C (zh) * 2003-12-30 2009-02-11 中芯国际集成电路制造(上海)有限公司 半导体集成电路隧道氧化窗口区域设计的结构及方法
US7794897B2 (en) * 2004-03-02 2010-09-14 Kabushiki Kaisha Toshiba Mask pattern correcting method, mask pattern inspecting method, photo mask manufacturing method, and semiconductor device manufacturing method
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) * 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
KR100745065B1 (ko) * 2004-12-27 2007-08-01 주식회사 하이닉스반도체 위상반전 마스크의 성장성 이물질 제거방법
JP4718894B2 (ja) * 2005-05-19 2011-07-06 株式会社東芝 半導体装置の製造方法
US20070012335A1 (en) * 2005-07-18 2007-01-18 Chang Hsiao C Photomask cleaning using vacuum ultraviolet (VUV) light cleaning
US7755207B2 (en) 2005-07-27 2010-07-13 Ricoh Company, Ltd. Wafer, reticle, and exposure method using the wafer and reticle
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
TWI400758B (zh) * 2005-12-28 2013-07-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
KR100732769B1 (ko) 2006-01-09 2007-06-27 주식회사 하이닉스반도체 포토마스크 제조방법
JP4791207B2 (ja) * 2006-02-16 2011-10-12 富士通セミコンダクター株式会社 位相シフトレチクルとその製造方法とその欠陥検査方法
JP4900045B2 (ja) * 2007-05-28 2012-03-21 富士通セミコンダクター株式会社 フォトマスクの遮光帯作成方法及び遮光帯データ作成装置
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP5360399B2 (ja) * 2009-08-06 2013-12-04 大日本印刷株式会社 回折格子作製用位相マスク
KR102166222B1 (ko) * 2013-01-15 2020-10-15 호야 가부시키가이샤 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법
JP5994952B2 (ja) * 2015-02-03 2016-09-21 大日本印刷株式会社 蒸着マスクの製造方法、蒸着マスク製造装置、レーザー用マスクおよび有機半導体素子の製造方法
US10908494B2 (en) * 2017-05-31 2021-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and manufacturing method thereof
JP6799723B1 (ja) * 2019-04-16 2020-12-16 信越化学工業株式会社 ペリクル用粘着剤、ペリクル、ペリクル付露光原版、半導体装置の製造方法、液晶表示板の製造方法、露光原版の再生方法及び剥離残渣低減方法
JP2020179408A (ja) * 2019-04-25 2020-11-05 イビデン株式会社 エキシマレーザーによる加工方法

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JPH0450943A (ja) * 1990-06-15 1992-02-19 Mitsubishi Electric Corp マスクパターンとその製造方法
JPH05289307A (ja) * 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
JPH0619112A (ja) * 1992-07-03 1994-01-28 Oki Electric Ind Co Ltd 位相シフトマスクの製造方法
US5604060A (en) * 1993-08-31 1997-02-18 Dai Nippon Printing Co., Ltd. Halftone phase shift photomask comprising a single layer of halftone light blocking and phase shifting
KR950027933A (ko) * 1994-03-21 1995-10-18 김주용 위상반전 마스크
US5510230A (en) * 1994-10-20 1996-04-23 At&T Corp. Device fabrication using DUV/EUV pattern delineation
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
JPH09211837A (ja) 1996-01-30 1997-08-15 Sanyo Electric Co Ltd 位相シフトマスク及びその製造方法
JP2728078B2 (ja) * 1996-02-28 1998-03-18 日本電気株式会社 半導体装置の製造方法
KR100219079B1 (ko) * 1996-06-29 1999-09-01 김영환 해프톤 위상 반전 마스크
US6174631B1 (en) * 1997-02-10 2001-01-16 E. I. Du Pont De Nemours And Company Attenuating phase shift photomasks
KR100725214B1 (ko) * 1999-12-15 2007-06-07 다이니폰 인사츠 가부시키가이샤 하프톤 위상 시프트 포토 마스크용 블랭크, 및 하프톤위상 시프트 포토 마스크
JP3608654B2 (ja) * 2000-09-12 2005-01-12 Ｈｏｙａ株式会社 位相シフトマスクブランク、位相シフトマスク
JP3715189B2 (ja) * 2000-09-21 2005-11-09 株式会社ルネサステクノロジ 位相シフトマスク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI767369B (zh) * 2019-10-23 2022-06-11 南韓商S&S技術股份有限公司 半色調衰減式相移空白遮罩以及用於極紫外光微影的光罩

Also Published As

Publication number Publication date
KR100856167B1 (ko) 2008-09-03
US6645856B2 (en) 2003-11-11
JP2003059805A (ja) 2003-02-28
KR20030015824A (ko) 2003-02-25
JP4053263B2 (ja) 2008-02-27
US20030036293A1 (en) 2003-02-20

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