JP4052865B2 - 半導体装置及び表示装置 - Google Patents
半導体装置及び表示装置 Download PDFInfo
- Publication number
- JP4052865B2 JP4052865B2 JP2002102591A JP2002102591A JP4052865B2 JP 4052865 B2 JP4052865 B2 JP 4052865B2 JP 2002102591 A JP2002102591 A JP 2002102591A JP 2002102591 A JP2002102591 A JP 2002102591A JP 4052865 B2 JP4052865 B2 JP 4052865B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- tft
- display device
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 239000003990 capacitor Substances 0.000 claims description 70
- 239000010409 thin film Substances 0.000 claims description 68
- 239000012535 impurity Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 238000005401 electroluminescence Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 59
- 239000010408 film Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 206010047571 Visual impairment Diseases 0.000 description 3
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YOZHUJDVYMRYDM-UHFFFAOYSA-N 4-(4-anilinophenyl)-3-naphthalen-1-yl-n-phenylaniline Chemical compound C=1C=C(C=2C(=CC(NC=3C=CC=CC=3)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=CC=1NC1=CC=CC=C1 YOZHUJDVYMRYDM-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- HXWWMGJBPGRWRS-UHFFFAOYSA-N b2738 Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1C=CC1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-UHFFFAOYSA-N 0.000 description 1
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 150000002894 organic compounds Chemical class 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002102591A JP4052865B2 (ja) | 2001-09-28 | 2002-04-04 | 半導体装置及び表示装置 |
TW91132641A TWI247262B (en) | 2001-09-28 | 2002-11-06 | Semiconductor device and display device |
KR10-2002-0071163A KR100488835B1 (ko) | 2002-04-04 | 2002-11-15 | 반도체 장치 및 표시 장치 |
US10/298,460 US6954194B2 (en) | 2002-04-04 | 2002-11-18 | Semiconductor device and display apparatus |
CNB021555842A CN1264133C (zh) | 2002-04-04 | 2002-12-11 | 半导体装置及显示装置 |
US11/188,195 US20050253531A1 (en) | 2002-04-04 | 2005-07-22 | Semiconductor device and display apparatus |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-303768 | 2001-09-28 | ||
JP2001303768 | 2001-09-28 | ||
JP2002102591A JP4052865B2 (ja) | 2001-09-28 | 2002-04-04 | 半導体装置及び表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2003173154A JP2003173154A (ja) | 2003-06-20 |
JP4052865B2 true JP4052865B2 (ja) | 2008-02-27 |
Family
ID=26623437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002102591A Expired - Lifetime JP4052865B2 (ja) | 2001-09-28 | 2002-04-04 | 半導体装置及び表示装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4052865B2 (zh) |
TW (1) | TWI247262B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8803924B2 (en) | 2010-09-03 | 2014-08-12 | Japan Display Inc. | Display device |
JP2016128916A (ja) * | 2001-11-13 | 2016-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11488531B2 (en) | 2020-06-22 | 2022-11-01 | Sharp Semiconductor Innovation Corporation | Proximity sensor and electronic device |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4485119B2 (ja) * | 2001-11-13 | 2010-06-16 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6806497B2 (en) | 2002-03-29 | 2004-10-19 | Seiko Epson Corporation | Electronic device, method for driving the electronic device, electro-optical device, and electronic equipment |
JP4653775B2 (ja) * | 2002-04-26 | 2011-03-16 | 東芝モバイルディスプレイ株式会社 | El表示装置の検査方法 |
KR100638304B1 (ko) | 2002-04-26 | 2006-10-26 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | El 표시 패널의 드라이버 회로 |
GB0218170D0 (en) * | 2002-08-06 | 2002-09-11 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
CN100403382C (zh) * | 2002-09-16 | 2008-07-16 | 皇家飞利浦电子股份有限公司 | 具有可变占空度的有源矩阵显示器 |
TWI376670B (en) * | 2003-04-07 | 2012-11-11 | Samsung Display Co Ltd | Display panel, method for manufacturing thereof, and display device having the same |
JP4360121B2 (ja) | 2003-05-23 | 2009-11-11 | ソニー株式会社 | 画素回路、表示装置、および画素回路の駆動方法 |
JP4168836B2 (ja) * | 2003-06-03 | 2008-10-22 | ソニー株式会社 | 表示装置 |
JP4939737B2 (ja) * | 2003-08-08 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 発光装置 |
US8937580B2 (en) | 2003-08-08 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of light emitting device and light emitting device |
JP2005084260A (ja) * | 2003-09-05 | 2005-03-31 | Agilent Technol Inc | 表示パネルの変換データ決定方法および測定装置 |
JP3628014B1 (ja) | 2003-09-19 | 2005-03-09 | ウインテスト株式会社 | 表示装置及びそれに用いるアクティブマトリクス基板の検査方法及び装置 |
JP4826870B2 (ja) * | 2003-12-02 | 2011-11-30 | ソニー株式会社 | 画素回路及びその駆動方法とアクティブマトリクス装置並びに表示装置 |
JP4147410B2 (ja) * | 2003-12-02 | 2008-09-10 | ソニー株式会社 | トランジスタ回路、画素回路、表示装置及びこれらの駆動方法 |
JP4552108B2 (ja) * | 2003-12-05 | 2010-09-29 | ソニー株式会社 | 画素回路及び表示装置とこれらの駆動方法 |
JP4830256B2 (ja) * | 2003-12-25 | 2011-12-07 | ソニー株式会社 | ディスプレイ装置、ディスプレイ装置の駆動回路及びディスプレイ装置の駆動方法 |
JP2005189383A (ja) * | 2003-12-25 | 2005-07-14 | Sony Corp | ディスプレイ装置及びディスプレイ装置の駆動方法 |
JP4569107B2 (ja) * | 2004-01-06 | 2010-10-27 | ソニー株式会社 | 表示装置及び表示装置の駆動方法 |
JP2005215102A (ja) * | 2004-01-28 | 2005-08-11 | Sony Corp | 画素回路、表示装置およびその駆動方法 |
JP4646187B2 (ja) * | 2004-02-12 | 2011-03-09 | 東北パイオニア株式会社 | 発光ディスプレイ装置およびその駆動制御方法 |
JP4529467B2 (ja) * | 2004-02-13 | 2010-08-25 | ソニー株式会社 | 画素回路および表示装置 |
JP4687943B2 (ja) | 2004-03-18 | 2011-05-25 | 奇美電子股▲ふん▼有限公司 | 画像表示装置 |
KR100589324B1 (ko) | 2004-05-11 | 2006-06-14 | 삼성에스디아이 주식회사 | 발광 표시 장치 및 그 구동 방법 |
JP2008521033A (ja) * | 2004-11-16 | 2008-06-19 | イグニス・イノベイション・インコーポレーテッド | アクティブマトリクス型発光デバイス表示器のためのシステム及び駆動方法 |
JP4714004B2 (ja) * | 2004-11-26 | 2011-06-29 | 三星モバイルディスプレイ株式會社 | 順次走査及び飛び越し走査兼用の駆動回路 |
US7317434B2 (en) * | 2004-12-03 | 2008-01-08 | Dupont Displays, Inc. | Circuits including switches for electronic devices and methods of using the electronic devices |
KR100624317B1 (ko) * | 2004-12-24 | 2006-09-19 | 삼성에스디아이 주식회사 | 주사 구동부 및 이를 이용한 발광 표시장치와 그의 구동방법 |
JP4826131B2 (ja) * | 2005-04-28 | 2011-11-30 | セイコーエプソン株式会社 | 発光装置および電子機器 |
KR100645700B1 (ko) | 2005-04-28 | 2006-11-14 | 삼성에스디아이 주식회사 | 주사 구동부 및 이를 이용한 발광 표시장치와 그의 구동방법 |
TWI429327B (zh) * | 2005-06-30 | 2014-03-01 | Semiconductor Energy Lab | 半導體裝置、顯示裝置、及電子設備 |
WO2007011061A1 (en) * | 2005-07-22 | 2007-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2007063814A1 (en) | 2005-12-02 | 2007-06-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
JP2007206515A (ja) * | 2006-02-03 | 2007-08-16 | Nippon Hoso Kyokai <Nhk> | 発光ダイオード駆動回路およびそれを用いたディスプレイ装置 |
JP2007286150A (ja) * | 2006-04-13 | 2007-11-01 | Idemitsu Kosan Co Ltd | 電気光学装置、並びに、電流制御用tft基板及びその製造方法 |
JP4984715B2 (ja) * | 2006-07-27 | 2012-07-25 | ソニー株式会社 | 表示装置の駆動方法、及び、表示素子の駆動方法 |
US8654045B2 (en) | 2006-07-31 | 2014-02-18 | Sony Corporation | Display and method for manufacturing display |
JP5109302B2 (ja) * | 2006-07-31 | 2012-12-26 | ソニー株式会社 | 表示装置およびその製造方法 |
JP4297169B2 (ja) | 2007-02-21 | 2009-07-15 | ソニー株式会社 | 表示装置及びその駆動方法と電子機器 |
JP2008233536A (ja) | 2007-03-20 | 2008-10-02 | Sony Corp | 表示装置 |
KR101469027B1 (ko) | 2008-05-13 | 2014-12-04 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
JP2008257271A (ja) * | 2008-07-04 | 2008-10-23 | Canon Inc | 表示装置 |
KR101498094B1 (ko) | 2008-09-29 | 2015-03-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
JP5244859B2 (ja) * | 2010-06-07 | 2013-07-24 | 出光興産株式会社 | 電気光学装置、及び、電流制御用tft基板の製造方法 |
CN102654976B (zh) * | 2012-01-12 | 2014-12-24 | 京东方科技集团股份有限公司 | 一种像素电路及其驱动方法、显示装置 |
US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
CN105336294B (zh) * | 2014-08-12 | 2018-01-30 | 上海和辉光电有限公司 | 有机电致发光显示器 |
US9818344B2 (en) | 2015-12-04 | 2017-11-14 | Apple Inc. | Display with light-emitting diodes |
KR102627074B1 (ko) * | 2016-12-22 | 2024-01-22 | 엘지디스플레이 주식회사 | 표시소자, 표시장치 및 데이터 구동부 |
WO2021064894A1 (ja) * | 2019-10-02 | 2021-04-08 | シャープ株式会社 | 表示装置 |
CN111243439B (zh) * | 2020-03-04 | 2021-09-24 | Tcl华星光电技术有限公司 | 一种显示面板及装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4588833B2 (ja) * | 1999-04-07 | 2010-12-01 | 株式会社半導体エネルギー研究所 | 電気光学装置および電子機器 |
-
2002
- 2002-04-04 JP JP2002102591A patent/JP4052865B2/ja not_active Expired - Lifetime
- 2002-11-06 TW TW91132641A patent/TWI247262B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016128916A (ja) * | 2001-11-13 | 2016-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9825068B2 (en) | 2001-11-13 | 2017-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for driving the same |
US10128280B2 (en) | 2001-11-13 | 2018-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for driving the same |
US11037964B2 (en) | 2001-11-13 | 2021-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for driving the same |
US8803924B2 (en) | 2010-09-03 | 2014-08-12 | Japan Display Inc. | Display device |
US11488531B2 (en) | 2020-06-22 | 2022-11-01 | Sharp Semiconductor Innovation Corporation | Proximity sensor and electronic device |
Also Published As
Publication number | Publication date |
---|---|
TW200305131A (en) | 2003-10-16 |
JP2003173154A (ja) | 2003-06-20 |
TWI247262B (en) | 2006-01-11 |
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