JP4051059B2 - Cmosイメージセンサ及びその製造方法 - Google Patents
Cmosイメージセンサ及びその製造方法 Download PDFInfo
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- JP4051059B2 JP4051059B2 JP2004369171A JP2004369171A JP4051059B2 JP 4051059 B2 JP4051059 B2 JP 4051059B2 JP 2004369171 A JP2004369171 A JP 2004369171A JP 2004369171 A JP2004369171 A JP 2004369171A JP 4051059 B2 JP4051059 B2 JP 4051059B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 239000012535 impurity Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 53
- 150000002500 ions Chemical group 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 46
- 238000002955 isolation Methods 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 9
- 229910015900 BF3 Inorganic materials 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 150000004767 nitrides Chemical class 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
Description
3つのトランジスタのうち、リセットトランジスタ(Rx)120は、フォトダイオード110で生成された光電荷を移送させる役割、及び信号検出のために電荷を排出する役割を果たし、ドライバートランジスタ(Dx)130はソースフォロワーとしての役割を果たす。又、セレクトトランジスタ(Sx)140はスイッチング及びアドレッシングのためのものである。
即ち、(P+)領域440は、フィールド領域の素子分離膜とフォトダイオード領域の間の境界面に形成されている。
図4に示したように、 P++型半導体基板401上にP-型エピ層が形成されている。また、半導体基板401のアクティブ領域を隔離するために基板401のフィールド領域に素子分離膜406aが形成されている。基板401のアクティブ領域となった領域上にはゲート絶縁膜122とゲート電極123が順次に形成されており、ゲート電極123及びゲート絶縁膜122の側壁にはスペーサー129が形成されている。
tanθ= W/(H1 +H 2)
123 ゲート電極
129 スペーサー
401 半導体基板
406a 素子分離膜
409 フォトダイオードのための低濃度の第2導電型不純物イオン領域
411 中濃度の第1導電型不純物イオン領域
440 高濃度の第1導電型不純物イオン領域
Claims (5)
- 第1導電型低濃度エピ層を有する第1導電型の半導体基板上に犠牲層を形成させる段階と、
前記犠牲層に開口を形成させ、その開口を形成させた犠牲層をマスクとして前記第1導電型の半導体基板のフィールド領域にトレンチを形成する段階と、
前記第1導電型低濃度エピ層内の前記トレンチの側面部に、前記犠牲層をそのままマスクとして用いて高濃度の第1導電型不純物イオン領域を形成する段階であって、高濃度の第1導電型不純物イオンを前記基板に所定の角度だけ傾斜した角度(θ)でトレンチの一側部又は両側部に注入し、 前記傾斜した角度(θ)は
tanθ= W/(H1+H2)の式であり、
前記Wは前記トレンチの幅、前記H1は前記基板上に形成させた犠牲層の高さ、前記H2は前記トレンチの深さである、前記高濃度の第1導電型不純物イオン領域を形成する段階と、
前記トレンチに素子分離用の絶縁膜を堆積させて素子分離膜を形成する段階と、
前記半導体基板上にゲート絶縁膜及びゲート電極を順次形成する段階と、
前記第1導電型低濃度エピ層内のアクティブ領域の所定の部分にフォトダイオードのための第2導電型の不純物領域を形成する段階とを含み、
前記アクティブ領域の所定の部分に形成させた前記第2導電型の不純物領域は、前記第1導電型の高濃度不純物イオン領域が、当該第2導電型の不純物領域と前記素子分離膜との間の境界面になるように形成される
ことを特徴とするCMOSイメージセンサの製造方法。 - 第1導電型の半導体基板上に犠牲層を形成させる段階は、前記半導体基板上に前記犠牲層を形成させるための犠牲酸化膜とハードマスク層を順次積層する過程で構成され、
前記トレンチ形成段階は、
前記基板のフィールド領域に前記犠牲酸化膜及びハードマスク層の開口部を形成させ、前記開口部内の基板の表面を露出させる過程と、
前記ハードマスク層をエッチングマスクとして用いて前記露出した基板にトレンチを形成する過程とで構成されることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。 - 高濃度の第1導電型不純物イオン領域は100〜300Åの幅で形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記高濃度の第1導電型不純物イオンはホウ素(B)又はフッ化ホウ素(BF2)イオンのうち、何れかのイオンであることを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
- 前記高濃度の第1導電型不純物イオン領域は、第1導電型の不純物イオンを1E12〜1E15 ions/cm2の濃度で注入して形成することを特徴とする請求項1に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020030101553A KR100619396B1 (ko) | 2003-12-31 | 2003-12-31 | 시모스 이미지 센서 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2005197682A JP2005197682A (ja) | 2005-07-21 |
JP4051059B2 true JP4051059B2 (ja) | 2008-02-20 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004369171A Expired - Fee Related JP4051059B2 (ja) | 2003-12-31 | 2004-12-21 | Cmosイメージセンサ及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7358108B2 (ja) |
JP (1) | JP4051059B2 (ja) |
KR (1) | KR100619396B1 (ja) |
CN (1) | CN100530663C (ja) |
DE (1) | DE102004063037A1 (ja) |
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KR100698100B1 (ko) * | 2005-09-21 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
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2003
- 2003-12-31 KR KR1020030101553A patent/KR100619396B1/ko active IP Right Grant
-
2004
- 2004-12-21 JP JP2004369171A patent/JP4051059B2/ja not_active Expired - Fee Related
- 2004-12-27 CN CNB2004101026876A patent/CN100530663C/zh not_active Expired - Fee Related
- 2004-12-28 DE DE102004063037A patent/DE102004063037A1/de not_active Withdrawn
- 2004-12-28 US US11/022,890 patent/US7358108B2/en active Active
Also Published As
Publication number | Publication date |
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DE102004063037A1 (de) | 2005-08-11 |
KR20050070938A (ko) | 2005-07-07 |
JP2005197682A (ja) | 2005-07-21 |
US7358108B2 (en) | 2008-04-15 |
US20050156213A1 (en) | 2005-07-21 |
KR100619396B1 (ko) | 2006-09-11 |
CN1641883A (zh) | 2005-07-20 |
CN100530663C (zh) | 2009-08-19 |
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