JP4049425B2 - 不揮発性半導体記憶装置の製造方法 - Google Patents
不揮発性半導体記憶装置の製造方法 Download PDFInfo
- Publication number
- JP4049425B2 JP4049425B2 JP35536797A JP35536797A JP4049425B2 JP 4049425 B2 JP4049425 B2 JP 4049425B2 JP 35536797 A JP35536797 A JP 35536797A JP 35536797 A JP35536797 A JP 35536797A JP 4049425 B2 JP4049425 B2 JP 4049425B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- floating gate
- oxide film
- etching
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 235
- 238000000034 method Methods 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 52
- 239000010408 film Substances 0.000 claims description 454
- 238000005530 etching Methods 0.000 claims description 147
- 239000010409 thin film Substances 0.000 claims description 107
- 239000000758 substrate Substances 0.000 claims description 85
- 238000002955 isolation Methods 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 14
- 229910010272 inorganic material Inorganic materials 0.000 claims description 13
- 239000011147 inorganic material Substances 0.000 claims description 13
- 239000011368 organic material Substances 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 6
- 238000007790 scraping Methods 0.000 claims description 4
- 230000007261 regionalization Effects 0.000 claims description 2
- 238000007667 floating Methods 0.000 description 277
- 229910052710 silicon Inorganic materials 0.000 description 72
- 239000010703 silicon Substances 0.000 description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 70
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 57
- 229910052581 Si3N4 Inorganic materials 0.000 description 56
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 56
- 238000001312 dry etching Methods 0.000 description 53
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 26
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 24
- 238000011109 contamination Methods 0.000 description 20
- 230000008878 coupling Effects 0.000 description 18
- 238000010168 coupling process Methods 0.000 description 18
- 238000005859 coupling reaction Methods 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910052799 carbon Inorganic materials 0.000 description 13
- 230000006870 function Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 12
- 230000014759 maintenance of location Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000003071 parasitic effect Effects 0.000 description 11
- 239000012535 impurity Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 239000012670 alkaline solution Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 101100440271 Caenorhabditis elegans ccf-1 gene Proteins 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
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- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
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- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35536797A JP4049425B2 (ja) | 1997-06-16 | 1997-12-24 | 不揮発性半導体記憶装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15856197 | 1997-06-16 | ||
| JP9-158561 | 1997-06-16 | ||
| JP35536797A JP4049425B2 (ja) | 1997-06-16 | 1997-12-24 | 不揮発性半導体記憶装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1174489A JPH1174489A (ja) | 1999-03-16 |
| JPH1174489A5 JPH1174489A5 (enExample) | 2005-07-28 |
| JP4049425B2 true JP4049425B2 (ja) | 2008-02-20 |
Family
ID=26485637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35536797A Expired - Fee Related JP4049425B2 (ja) | 1997-06-16 | 1997-12-24 | 不揮発性半導体記憶装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4049425B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005286256A (ja) * | 2004-03-31 | 2005-10-13 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| KR100590220B1 (ko) * | 2004-08-04 | 2006-06-19 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
| US7202125B2 (en) * | 2004-12-22 | 2007-04-10 | Sandisk Corporation | Low-voltage, multiple thin-gate oxide and low-resistance gate electrode |
| JP2009099738A (ja) * | 2007-10-16 | 2009-05-07 | Toshiba Corp | 半導体装置、半導体装置の製造方法及び半導体記憶装置の製造方法 |
-
1997
- 1997-12-24 JP JP35536797A patent/JP4049425B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1174489A (ja) | 1999-03-16 |
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