JP4049425B2 - 不揮発性半導体記憶装置の製造方法 - Google Patents

不揮発性半導体記憶装置の製造方法 Download PDF

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Publication number
JP4049425B2
JP4049425B2 JP35536797A JP35536797A JP4049425B2 JP 4049425 B2 JP4049425 B2 JP 4049425B2 JP 35536797 A JP35536797 A JP 35536797A JP 35536797 A JP35536797 A JP 35536797A JP 4049425 B2 JP4049425 B2 JP 4049425B2
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Prior art keywords
film
floating gate
oxide film
etching
gate electrode
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Expired - Fee Related
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JP35536797A
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Japanese (ja)
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JPH1174489A (ja
JPH1174489A5 (enExample
Inventor
治 坂本
夏夫 味香
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Renesas Technology Corp
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Renesas Technology Corp
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Publication of JPH1174489A5 publication Critical patent/JPH1174489A5/ja
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  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP35536797A 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4049425B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35536797A JP4049425B2 (ja) 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15856197 1997-06-16
JP9-158561 1997-06-16
JP35536797A JP4049425B2 (ja) 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法

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JPH1174489A JPH1174489A (ja) 1999-03-16
JPH1174489A5 JPH1174489A5 (enExample) 2005-07-28
JP4049425B2 true JP4049425B2 (ja) 2008-02-20

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JP35536797A Expired - Fee Related JP4049425B2 (ja) 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005286256A (ja) * 2004-03-31 2005-10-13 Nec Electronics Corp 半導体装置及びその製造方法
KR100590220B1 (ko) * 2004-08-04 2006-06-19 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US7202125B2 (en) * 2004-12-22 2007-04-10 Sandisk Corporation Low-voltage, multiple thin-gate oxide and low-resistance gate electrode
JP2009099738A (ja) * 2007-10-16 2009-05-07 Toshiba Corp 半導体装置、半導体装置の製造方法及び半導体記憶装置の製造方法

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JPH1174489A (ja) 1999-03-16

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