JPH1174489A5 - - Google Patents

Info

Publication number
JPH1174489A5
JPH1174489A5 JP1997355367A JP35536797A JPH1174489A5 JP H1174489 A5 JPH1174489 A5 JP H1174489A5 JP 1997355367 A JP1997355367 A JP 1997355367A JP 35536797 A JP35536797 A JP 35536797A JP H1174489 A5 JPH1174489 A5 JP H1174489A5
Authority
JP
Japan
Prior art keywords
gate electrode
semiconductor substrate
oxide film
memory device
etching mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997355367A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174489A (ja
JP4049425B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP35536797A priority Critical patent/JP4049425B2/ja
Priority claimed from JP35536797A external-priority patent/JP4049425B2/ja
Publication of JPH1174489A publication Critical patent/JPH1174489A/ja
Publication of JPH1174489A5 publication Critical patent/JPH1174489A5/ja
Application granted granted Critical
Publication of JP4049425B2 publication Critical patent/JP4049425B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP35536797A 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4049425B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP35536797A JP4049425B2 (ja) 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15856197 1997-06-16
JP9-158561 1997-06-16
JP35536797A JP4049425B2 (ja) 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法

Publications (3)

Publication Number Publication Date
JPH1174489A JPH1174489A (ja) 1999-03-16
JPH1174489A5 true JPH1174489A5 (enExample) 2005-07-28
JP4049425B2 JP4049425B2 (ja) 2008-02-20

Family

ID=26485637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35536797A Expired - Fee Related JP4049425B2 (ja) 1997-06-16 1997-12-24 不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JP4049425B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005286256A (ja) * 2004-03-31 2005-10-13 Nec Electronics Corp 半導体装置及びその製造方法
KR100590220B1 (ko) * 2004-08-04 2006-06-19 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조방법
US7202125B2 (en) * 2004-12-22 2007-04-10 Sandisk Corporation Low-voltage, multiple thin-gate oxide and low-resistance gate electrode
JP2009099738A (ja) * 2007-10-16 2009-05-07 Toshiba Corp 半導体装置、半導体装置の製造方法及び半導体記憶装置の製造方法

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