JP2000269466A5 - - Google Patents

Download PDF

Info

Publication number
JP2000269466A5
JP2000269466A5 JP1999068017A JP6801799A JP2000269466A5 JP 2000269466 A5 JP2000269466 A5 JP 2000269466A5 JP 1999068017 A JP1999068017 A JP 1999068017A JP 6801799 A JP6801799 A JP 6801799A JP 2000269466 A5 JP2000269466 A5 JP 2000269466A5
Authority
JP
Japan
Prior art keywords
insulating film
forming
opening
mask
formation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999068017A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000269466A (ja
JP4270633B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP06801799A priority Critical patent/JP4270633B2/ja
Priority claimed from JP06801799A external-priority patent/JP4270633B2/ja
Priority to US09/521,969 priority patent/US6281050B1/en
Publication of JP2000269466A publication Critical patent/JP2000269466A/ja
Publication of JP2000269466A5 publication Critical patent/JP2000269466A5/ja
Application granted granted Critical
Publication of JP4270633B2 publication Critical patent/JP4270633B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP06801799A 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4270633B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP06801799A JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法
US09/521,969 US6281050B1 (en) 1999-03-15 2000-03-09 Manufacturing method of a semiconductor device and a nonvolatile semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06801799A JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000269466A JP2000269466A (ja) 2000-09-29
JP2000269466A5 true JP2000269466A5 (enExample) 2005-06-09
JP4270633B2 JP4270633B2 (ja) 2009-06-03

Family

ID=13361647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06801799A Expired - Fee Related JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JP4270633B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672197B2 (ja) * 2001-07-04 2011-04-20 株式会社東芝 半導体記憶装置の製造方法
KR100466195B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 제조방법
JP2004228421A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
US7119403B2 (en) 2003-10-16 2006-10-10 International Business Machines Corporation High performance strained CMOS devices
JP4282517B2 (ja) 2004-03-19 2009-06-24 株式会社東芝 不揮発性半導体記憶装置の製造方法
KR100781033B1 (ko) 2005-05-12 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100712597B1 (ko) 2006-02-07 2007-05-02 삼성전자주식회사 비휘발성 기억 소자의 형성 방법
CN100547768C (zh) * 2006-12-19 2009-10-07 力晶半导体股份有限公司 非易失性存储器的制作方法
JP5242114B2 (ja) * 2007-10-04 2013-07-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7674684B2 (en) * 2008-07-23 2010-03-09 Applied Materials, Inc. Deposition methods for releasing stress buildup

Similar Documents

Publication Publication Date Title
US7358142B2 (en) Method for forming a FinFET by a damascene process
US7141456B2 (en) Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layers
US8314025B2 (en) Method of forming semiconductor device having contact plug
KR100660881B1 (ko) 수직 채널 트랜지스터를 구비한 반도체 소자 및 그 제조방법
KR101096187B1 (ko) 반도체 장치 제조 방법
JP2001168306A5 (enExample)
JP2006237605A5 (enExample)
JP2008504679A5 (enExample)
TW441038B (en) Manufacturing method of ETOX flash memory
KR930018659A (ko) 고집적 소자용 미세 콘택 형성방법
TWI336101B (en) Semiconductor device with a bulb-type recess gate and method for manufacturing the same
TW201120996A (en) Method of forming contact hole arrays using a hybrid spacer technique
TW200849486A (en) Memory structure and method of making the same
JP2000269466A5 (enExample)
TW201603129A (zh) 製造電晶體閘極之方法及包含電晶體閘極之半導體裝置
KR100859081B1 (ko) 반도체 디바이스 제조 방법
KR20040023716A (ko) 반도체 디바이스 제조 방법
US6146932A (en) Method for fabricating metal-oxide-semiconductor field effect transistor device
US7560338B2 (en) Manufacturing method of non-volatile memory
US7915113B2 (en) Semiconductor device and method for manufacturing the same
KR101138843B1 (ko) 반도체 메모리 장치 및 그 제조방법
JP3664884B2 (ja) 半導体記憶装置およびその製造方法
TWI309075B (en) Method for fabricating semiconductor device
KR101116287B1 (ko) 반도체 소자의 수직 채널 트랜지스터 및 그 형성 방법
JPH1174489A5 (enExample)