JP4270633B2 - 半導体装置及び不揮発性半導体記憶装置の製造方法 - Google Patents

半導体装置及び不揮発性半導体記憶装置の製造方法 Download PDF

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JP4270633B2
JP4270633B2 JP06801799A JP6801799A JP4270633B2 JP 4270633 B2 JP4270633 B2 JP 4270633B2 JP 06801799 A JP06801799 A JP 06801799A JP 6801799 A JP6801799 A JP 6801799A JP 4270633 B2 JP4270633 B2 JP 4270633B2
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insulating film
forming
opening
formation region
mask
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JP2000269466A (ja
JP2000269466A5 (enExample
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上 栄 人 坂
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Toshiba Corp
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Toshiba Corp
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Priority to JP06801799A priority Critical patent/JP4270633B2/ja
Priority to US09/521,969 priority patent/US6281050B1/en
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Publication of JP2000269466A5 publication Critical patent/JP2000269466A5/ja
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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP06801799A 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法 Expired - Fee Related JP4270633B2 (ja)

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Application Number Priority Date Filing Date Title
JP06801799A JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法
US09/521,969 US6281050B1 (en) 1999-03-15 2000-03-09 Manufacturing method of a semiconductor device and a nonvolatile semiconductor storage device

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Application Number Priority Date Filing Date Title
JP06801799A JP4270633B2 (ja) 1999-03-15 1999-03-15 半導体装置及び不揮発性半導体記憶装置の製造方法

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JP2000269466A JP2000269466A (ja) 2000-09-29
JP2000269466A5 JP2000269466A5 (enExample) 2005-06-09
JP4270633B2 true JP4270633B2 (ja) 2009-06-03

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672197B2 (ja) * 2001-07-04 2011-04-20 株式会社東芝 半導体記憶装置の製造方法
KR100466195B1 (ko) * 2002-07-18 2005-01-13 주식회사 하이닉스반도체 플래시 메모리 제조방법
JP2004228421A (ja) * 2003-01-24 2004-08-12 Renesas Technology Corp 不揮発性半導体記憶装置およびその製造方法
US7119403B2 (en) 2003-10-16 2006-10-10 International Business Machines Corporation High performance strained CMOS devices
JP4282517B2 (ja) 2004-03-19 2009-06-24 株式会社東芝 不揮発性半導体記憶装置の製造方法
KR100781033B1 (ko) 2005-05-12 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 제조방법
KR100712597B1 (ko) 2006-02-07 2007-05-02 삼성전자주식회사 비휘발성 기억 소자의 형성 방법
CN100547768C (zh) * 2006-12-19 2009-10-07 力晶半导体股份有限公司 非易失性存储器的制作方法
JP5242114B2 (ja) * 2007-10-04 2013-07-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7674684B2 (en) * 2008-07-23 2010-03-09 Applied Materials, Inc. Deposition methods for releasing stress buildup

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