JP4044287B2 - 銅／タンタル基体に有用な化学的機械研磨スラリー - Google Patents

銅／タンタル基体に有用な化学的機械研磨スラリー Download PDF

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Publication number
JP4044287B2
JP4044287B2 JP2000557316A JP2000557316A JP4044287B2 JP 4044287 B2 JP4044287 B2 JP 4044287B2 JP 2000557316 A JP2000557316 A JP 2000557316A JP 2000557316 A JP2000557316 A JP 2000557316A JP 4044287 B2 JP4044287 B2 JP 4044287B2
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JP
Japan
Prior art keywords
slurry
substrate
polishing
tantalum
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2000557316A
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English (en)
Japanese (ja)
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JP2002519471A (ja
JP2002519471A5 (enExample
Inventor
ブラシック コーフマン，ブラスタ
シー． キストラー，ロドニー
ワン，シュミン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Filing date
Publication date
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Publication of JP2002519471A publication Critical patent/JP2002519471A/ja
Publication of JP2002519471A5 publication Critical patent/JP2002519471A5/ja
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Publication of JP4044287B2 publication Critical patent/JP4044287B2/ja
Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2000557316A 1998-06-26 1999-06-25 銅／タンタル基体に有用な化学的機械研磨スラリー Expired - Lifetime JP4044287B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/105,065 US6217416B1 (en) 1998-06-26 1998-06-26 Chemical mechanical polishing slurry useful for copper/tantalum substrates
US09/105,065 1998-06-26
PCT/US1999/014556 WO2000000561A1 (en) 1998-06-26 1999-06-25 Chemical mechanical polishing slurry useful for copper/tantalum substrates

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007158007A Division JP5032214B2 (ja) 1998-06-26 2007-06-14 銅／タンタル基体に有用な化学的機械研磨スラリー

Publications (3)

Publication Number Publication Date
JP2002519471A JP2002519471A (ja) 2002-07-02
JP2002519471A5 JP2002519471A5 (enExample) 2005-04-28
JP4044287B2 true JP4044287B2 (ja) 2008-02-06

Family

ID=22303862

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000557316A Expired - Lifetime JP4044287B2 (ja) 1998-06-26 1999-06-25 銅／タンタル基体に有用な化学的機械研磨スラリー
JP2007158007A Expired - Lifetime JP5032214B2 (ja) 1998-06-26 2007-06-14 銅／タンタル基体に有用な化学的機械研磨スラリー

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007158007A Expired - Lifetime JP5032214B2 (ja) 1998-06-26 2007-06-14 銅／タンタル基体に有用な化学的機械研磨スラリー

Country Status (13)

Country Link
US (2) US6217416B1 (enExample)
EP (1) EP1090083B1 (enExample)
JP (2) JP4044287B2 (enExample)
KR (1) KR100491061B1 (enExample)
CN (1) CN1174063C (enExample)
AU (1) AU4723499A (enExample)
CA (1) CA2335034A1 (enExample)
DE (1) DE69902539T2 (enExample)
ID (1) ID27536A (enExample)
IL (1) IL140302A0 (enExample)
MY (1) MY117693A (enExample)
TW (1) TW585899B (enExample)
WO (1) WO2000000561A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE69902539T2 (de) 2002-12-19
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US6447371B2 (en) 2002-09-10
DE69902539D1 (de) 2002-09-19
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CN1312843A (zh) 2001-09-12
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US6217416B1 (en) 2001-04-17
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